Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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An Investigation of Selective Etching of GaAs to Al\ulcornerGa\ulcornerAs Using BCI$_3$SF\ulcorner Gas Mixture in ECR Plasma

ECR 플라즈마에서 $BCI_3/SF_6$ 혼합 가스를 이용한 $Al_{0.25}Ga_{0.75}As$에 대한 GaAs의 선택적 식각에 대한 연구

  • 이철욱 (한국전자통신연구원 화합물 소자실) ;
  • 이동율 (한국전자통신연구원 화합물 소자실) ;
  • 손정식 (한국전자통신연구원 화합물 소자실) ;
  • 배인호 (영남대학교 물리학과) ;
  • 박성배 (대구대학교 물리학과)
  • Published : 1998.06.01
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Abstract

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)

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References

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