• Journal of Welding and Joining
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• 제29권6호
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• 마이크로전자및패키징학회지
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• 제15권4호
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• pp.9-15
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• 2008

Au와 Sn을 순차적으로 도금한 Au/Sn 범프를 플립칩 본딩하여 Au-Sn 솔더 접속부를 형성 후, 미세구조와 접속저항을 분석하였다. $285^{\circ}C$에서 30초간 플립칩 본딩한 Au-Sn 솔더 접속부는 $Au_5Sn$+AuSn lamellar 구조로 이루어져 있으며, 이 시편을 $310^{\circ}C$에서 3분간 유지하여 2차 리플로우시 $Au_5Sn$+AuSn interlamellar spacing이 증가하였다. $285^{\circ}C$에서 30초간 플립칩 본딩한 Au-Sn 접속부는 15.6 $m{\Omega}$/bump의 평균 접속저항을 나타내었으며, 이 시편을 다시 $310^{\circ}C$에서 3분간 유지하여 2차 리플로우 한 Au-Sn 접속부는 15.0 $m{\Omega}$/bump의 평균 접속저항을 나타내었다.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.1-6
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• 2014

고출력 LED 패키지의 열적 경로(thermal path)를 줄이기 위해 플립칩 본딩법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 Au-Sn 열압착 본딩 및 Sn-Ag-Cu(SAC) 리플로우 본딩을 이용하여 본딩 특성 및 열적특성을 비교 평가 하였다. Au-Sn 열압착 본딩은 50 N에서 $300^{\circ}C$의 접합온도로 본딩하였고, SAC 솔더는 솔더페이스트를 인쇄한 후 리플로우법으로 피크온도 $255^{\circ}C$에서 30 sec에서 본딩하였다. SAC 솔더를 사용한 LED 패키지의 전단강도는 $5798.5gf/mm^2$로 Au-Sn 열압착 본딩의 $3508.5gf/mm^2$에 비해 1.6배 높았다. 파단면과 단면분석 결과 Au-Sn, SAC 솔더 모두 LED 칩 내부에서 파단이 일어나는 것을 관찰하였다. 반면 Au-Sn 열압착 본딩 샘플의 열저항은 SAC솔더 접합 샘플에 비해 낮았으며, SAC 솔더 접합부 내부의 기공에 의해 열저항이 커짐을 알 수 있었다.

• 마이크로전자및패키징학회지
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• 제14권2호
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• pp.49-57
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• 2007

본 연구에서는 Au 와 Sn을 rf-magnetron sputter를 이용하여 다층막(multilayer)과 동시증착(Co-sputter)방법으로 스퍼터링하여 기판위에 AuSn 솔더를 형성하였고, 솔더의 조성제어와 특성 분석을 통해 Sn rich AuSn 솔더의 형성 기술에 대하여 연구하였다. AuSn 솔더를 형성하기 앞서 Au와 Sn에 대하여 단일 금속 증착을 하였다. 이를 토대로 AuSn솔더를 증착하기 위한 실험 조건을 확보하였다. 증착변수로는 기판의 온도, rf 전력과 두께 비를 이용하였다. 다층막의 경우, 고온의 기판에서 솔더 합금의 표면거칠기와 조성이 보다 정확하게 제어되었다. 이에 비해 동시증착 솔더는 기판의 온도에 의한 조성의 변화가 거의 없었으나, rf전력에 의해서 조성이 보다 쉽게 제어할 수 있었다. 여기에 더해, 동시 증착 솔더 박막의 대부분은 증착동안에 금속간 화합물로 변화한 것을 알 수 있었다. 화합물의 종류는 XRD로 분석하였다. 형성된 솔더 박막을 플럭스를 이용하지 않고 리드프레임에 접합하여 접합강도를 측정하였다. 다층형의 경우 Au 10wt%의 조건에서 최대 $33(N/mm^2)$ 전단응력을 나타내었으며, 동시증착형은 Au 5wt%에서 $460(N/mm^2)$ 전단응력을 나타내었다.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• 대한치과기공학회지
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• 제24권1호
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• pp.65-71
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• 2002

This study was performed to observe the microhardness change of the surface and the bonding strength between the porcelain and alloy specimens in order to investigate the effects of appended indium, tin and copper on interfacial properties of Au-Pd-Ag alloys. The hardness of castings was measured with a micro-Vicker's hardness tester. The interfacial shear bonding strength between alloy specimen and fused porcelain was measured with a mechanical testing system(MTS 858.20). The microhardness of Au-Pd-Ag alloy was increased by adding indium and tin, but not increased by adding copper. The shear bonding strength of Au-Pd-Ag-Sn alloy and Au-Pd-Ag-Cu alloy showed 87MPa, 57MPa. The higher concentration of adding elements showed the higher shear bonding strength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.203-205
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• 2003

레이저 다이오드를 p-side-down 방식으로 본딩하기 위하여 AuSn 솔더합금을 증착한 후 온도와 압력, 시간을 변화시켜 본딩상태를 조사하였다. CuW위에 adhsion layer와 확산방지층을 각각 $500{\AA}$과 $2000{\AA}$을 증착하였으며 솔더층으로 AuSn을 $2.6{\mu}m$ 증착 하였다. 열처리는 질소 분위기에서 행하였으며, 표면의 거칠기는 AFM으로 측정하였다.

• 센서학회지
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• 제16권1호
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• pp.62-67
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• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 한국소음진동공학회논문집
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• 제16권12호
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.30-32
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• 2005

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.