• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.373-378
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• 2003

With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

• The Journal of Korean Academy of Prosthodontics
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• v.23 no.1
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• pp.39-59
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• 1985

The purpose of this study was to investigate how gap distances of 0.13mm, 0.15mm, 0.20mm, and 0.30mm affects solder joint strength from gold alloys and nickel-chromium base alloys and to examine the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys. The tensile test specimens were prepared in the split stainless steel mold with a half dumbbell shape 2.5mm in diameter and l2mm in length. 6 pairs of specimens of each gap distance group of gold alloys and nickel-chromium base alloys were made and 48 pairs of all specimens were soldered with solder gold of 666 fineness. All soldered specimens were machined to a uniform diameter and then a tensile load was applied at a cross-head speed of 0.10mm/min using Instron Universal Testing Machine, Model 1115. The fractured specimens at solder gold of solder joint fracture with each gap distance of 0.13mm, 0.15mm, 0.20mm, and 0.30mm were examined under the Scanning Electron Microscope, JSM-35c and the composition of solder gold, the solder joint of gold alloys and nickel-chromium base alloys was analyzed by Electron Probe Micro Analyzer. The results of this study were obtained as follows: 1. In case of soldering of gold alloys, the tensile strength between gold alloys showed $37.33{\pm}2.52kg/mm^2$ at 0.13, $39.14{\pm}3.35kg/mm^2$ at 0.15mm, $43.76{\pm}2.97kg/mm^2$ at 0.20mm, and $49.18{\pm}4.60kg/mm^2$ at 0.30mm. There was statistically significant difference at each gap distance, and so the greater increase of gap distance showed the greater tensile strength. 2. In case of soldering of nickel-chromium base alloys, the tensile strength between nickel-chromium base alloys showed $34.84{\pm}4.26kg/mm^2$ at 0.13mm, $37.25{\pm}2.49kg/mm^2$ at 0.15mm, $42.91{\pm}4.32kg/mm^2$ at 0.20mm, and $46.93{\pm}4.21kg/mm^2$ at 0.30mm. There was not statistically significant difference only between 0.13mm and 0.15mm and bet ween 0.20 mm and 0.30mm, but generally the greater increase of gap distance showed the greater tensile strength. 3. The greater increase of gap distance shoed less porosities in solder gold at solder joint fracture. 4. In solder gold Au, Cu, Ag, Zn, and Sn were composed and Au and Cu were mostly distributed uniformly. 5. In solder joints of solder gold and gold alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Au, Cu, Ag, Pt, and Pd were composed in gold alloys. Au and Cu of solder gold and gold alloys were mostly distributed uniformly and the diffusion of other elements except Pt and Pd around the solder joint was not almost found. In solder joints of solder gold and nickel-chromium base alloys Au, Cu, Ag, Zn, and Sn were composed in solder gold and Ni, Cr, and Al were composed in nickel-chromium base alloys. Au and Cu of solder gold and Ni and Cr of nickel-chromium base alloys were mostly distributed uniformly and the diffusion of other elements except Cr around the solder joint was not almost found.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.415-416
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• 2008

The finite element model was used to simulate the temperature distribution of a arrayed vertical-cavity surface-emitting laser (VCSEL). In this work, the dimension of AlGaAs/GaAs based VCSEL array was $50{\mu}m$ active diameter and $250{\mu}m$ pitch, and AuSn solder of 80wt%Au-20wt%Sn was included to flip-chip bond. The results of the thermal simulation will be applied to predict the thermal cross-talk in high speed parallel optical interconnects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.160-161
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• 2008

$SnO_2$는 n형 반도체로써 3.6 eV의 큰 밴드갭을 가지는 물질로 CO와 NOx 가스에 좋은 감도를 나타내는 것으로 보고되고 있다. 문헌에 따른 일반적인 $SnO_2$ 가스센서는 후막이나 벌크형태로 제작되었다. 근래에는 가스감응체가 $SnO_2$ 나노선 형태인 가스센서가 활발한 연구 중에 있다. 본 논문에서는 기판 위에 서로 분리된 전극 패턴에 Au를 촉매로 하여 네트워크 구조로 된 $SnO_2$ 나노선이 합성되었다. 제작된 가스센서에 Pd 도핑에 따른 영향을 알아보기 위하여 1.8 mM의 Pd 용액 ($PdCl_2{\cdot}xH_2O$ 3 mg + $H_2O$ 10 ml)을 이용하여 센서에 도핑하였다. 측정 시스템에서 $NO_2$ 가스에 대한 센서의 특성을 분석한 결과 도핑하지 않은 $SnO_2$ 센서보다 20%정도의 감도가 개선되었다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.63-69
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• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.303-304
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• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.2
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• pp.125-136
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• 2006

Statement of problem. The success of the bonding between electroforming gold and resin is dependent on the surface-conditioning technique but its effective technique has net been studied widely. Purpose. The purpose of the study was to evaluate the bond strength between the electroforming gold and resin with varying the surface-conditioning technique. Materials and methods. Sixty rectangular shaped metal specimens were made and one side of each specimen were gold hard plated. The sand-blasted specimens were divided into four experimental groups with fifteen specimens in each group and were treated as follows. Group 1: Silicoating (Rocatec, 3M ESPE)+ Sinfony (3M ESPE), Group 2: SR Link+ SR Adoro (Ivoclar Vivadent), Group 3: Tin plating (Microtin, Danville Engineering)+ SR Link+ SR Adoro, Group 4: Tin plating (Micro tin, Danville Engineering)+ Silicoating (Rocatec)+ Sinfony. Shear bond strength at metal-resin interface were measured using universal testing machine. Energy Dispersive x-ray analysis was done and scanning electron microscope images were taken and observed. Results and Conclusion. The following conclusions were drawn. 1. The mean shear bond strength values in order were 11.69MPa (Group 2), 22.35MPa (Group 3), 22.40MPa (Group 1) and 27.71MPa (Group 4). There was no significant difference in Group 1, Group 3 and Group 4(P>0.05). 2. In the EDX line analysis, the Au was detected on the surface of all specimen. $SnO_2$ showed on the surface of Group 2 and $SiO_2$ was detected on the surface of Group 1. 3. Increasing of roughness by sandblasting(Group 2), formation of micro-irregularities and tin crystals by electrolytic tin plating(Group 3) and formation of surface irregularities and $SiO_2$ layer(Group 1,4) were observed in SEM photo. 4. Tin plating(Group 3) and Rocatec treatment(Group 1) showed clinically effective shear bond strength(>20MPa), but when the two surface conditioning method were used together higher bond strength were achieved.