• Title/Summary/Keyword: Au wire

검색결과 49건 처리시간 0.032초

반도체 패키징용 금-코팅된 은 와이어의 부식특성 (Corrosion Characteristics of Gold-Coated Silver Wire for Semiconductor Packaging)

  • 홍원식;김미송;김상엽;전성민;문정탁;김영식
    • Corrosion Science and Technology
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    • 제20권5호
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    • pp.289-294
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    • 2021
  • In this study, after measuring polarization characteristics of 97.3 wt% Ag, Au-Coated 97.3 wt% Ag (ACA) and 100 wt% Au wires in 1 wt% H2SO4 and 1 wt% HCl electrolytes at 25 ℃, corrosion rate and corrosion characteristics were comparatively analyzed. Comparing corrosion potential (ECORR) values in sulfuric acid solution, ACA wire had more than six times higher ECORR value than Au wire. Thus, it seems possible to use a broad applied voltage range of bonding wire for semiconductor packaging which ACA wire could be substituted for the Au wire. However, since the ECORR value of ACA wire was three times lower than that of the Au wire in a hydrochloric acid solution, it was judged that the use range of the applied voltage and current of the bonding wire should be considered. In hydrochloric acid solution, 97.3 wt% Ag wire showed the highest corrosion rate, while ACA and Au showed similar corrosion rates. Additionally, in the case of sulfuric acid solution, all three types showed lower corrosion rates than those under the hydrochloric acid solution environment. The corrosion rate was higher in the order of 97.3 wt% Ag > ACA > 100 wt% Au wires.

Au wire와 Al pad사이의 IMC(Intermetallic Compound) 형성에 의한 수명예측 (Lifetime Estimation due to IMC(Intermetallic Compound) formation between Au wire and Al pad)

  • 손정민;장미순;곽계달
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1295-1300
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    • 2008
  • During the manufacturing and the service life of Au-Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au-Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at $175^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au-Al phases. The crack propagation occurs resulting in the failure of the Au-Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.

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Characteristics of copper wire wedge bonding

  • Tian, Y.;Zhou, Y.;Mayer, M.;Won, S.J.;Lee, S.M.;Cho, S.Y.;Jung, J.P.
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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    • pp.34-36
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    • 2005
  • Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.

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Au wire와 Ag pad간 확산현상의 가속수명시험

  • 김철희;황순미;송병석
    • 한국신뢰성학회:학술대회논문집
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    • 한국신뢰성학회 2011년도 춘계학술발표대회 논문집
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    • pp.49-54
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    • 2011
  • 반도체 칩과 패키지는 wire로 연결되는데, 이 때 반도체의 용도에 따라 다양한 wire와 pad의 조합이 사용되며, 이 두 개의 다른 금속물질 결합부위는 IMC(Inter Metallic Compound)를 형성하게 된다. 그러나, 결함 및 오염 등에 의하여 인접재료의 원자들이 이동하는 확산(Diffusion)이 발생하게 되어 IMC가 성장하고, 두 개의 금속물질간의 확산율은 상호 다르며, 확산율은 온도에 따른 함수가 된다. Au wire와 Ag pad를 이용하여 제조한 IR 수신모듈를 대상으로 3가지 고온조건에서 가속수명시험을 실시하였고, 각 온도별 수명분포를 바탕으로 가속계수와 활성화에너지 도출 및 정상온도에서의 수명도 예측할 수 있었다.

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The Effect of Manipulating Package Construct and Leadframe Materials on Fracture Potential of Plastically Encapsulated Microelectronic Packages During Thermal Cycling

  • Lee, Seong-Min
    • Transactions on Electrical and Electronic Materials
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    • 제2권3호
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    • pp.28-32
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    • 2001
  • It was studied in the present work how the thermal cycling performance of LOC (lead on chip) packages depends on the package construct or leadframe materials. First, package body thickness and Au wire diameter were manipulated for the selection of proper package design. Secondly, two different types of leadframe materials (i.e. copper and 52%Fe-48%Ni alloy) were tested to determine the better material for improved reliability margin of plastically encapsulated microelectronic packages. This work shows that manipulating package body thickness was more effective than an increase of Au wire from 23$\mu\textrm{m}$ to 33$\mu\textrm{m}$ for the prevention of wire debonding failure. Further, this work indicates that the LOC packages including the copper leadframes can be more susceptible to thermal cycling reliability degradation due to chip cracking than those including the alloy leadframes.

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Eutectic Temperature Effect on Au Thin Film for the Formation of Si Nanostructures by Hot Wire Chemical Vapor Deposition

  • Ji, Hyung Yong;Parida, Bhaskar;Park, Seungil;Kim, MyeongJun;Peck, Jong Hyeon;Kim, Keunjoo
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.63-68
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    • 2013
  • We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

Universal wire bonding(Au ball bonding + Al wedge bonding)을 위한 표층 전극 구조 설계 (Surface bonding pad design for universal wire bonding(Au ball bonding + Al wedge bonding))

  • 성제홍;김진완;최윤혁
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.171-171
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    • 2008
  • 본 연구는 초음파 알루미늄 웨지 및 금 볼 본딩을 동시에 적용 가능한 본딩 Pad의 금속학적 안정성을 고려한 표층전극 형성 방법에 관한 것이다. 특히, 이동통신 및 전장용 모듈의 복합 및 융합화로 LTCC기판 패키징에 있어서 다양한 본딩 기술이 요구되고 있다. 전통적인 interconnection 기술인 Au ball 본딩 및 초음파 에너지를 이용한 Al wedge 본딩 기술이 동시에 사용되어야 하는 패키지 구조의 경우 본딩 패드의 표층전극 설계는 서로 상충되는 조건이 요구된다. 따라서, 본 연구에서는 LTCC기판의 표층전극의 Metal finish 방법으로 이용되는 ENEPIG(무전해 Ni/Pd/Au도금)공법으로 Au ball 본딩 및 초음파 Al wedge 본딩을 동시에 가능하게 하는 solution을 제시하여 패키징 자유도뿐만 아니라 Interconnection 신뢰성을 확보할 수 있었다.

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극세선 압출 기술 개발 (Fine Wire Extrusion Technology)

  • 김승수;박훈재;윤덕재;임성주;최태훈;나경환
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 추계학술대회 논문집
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    • pp.97-101
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    • 2001
  • Fine metal (Au, Ag, Cu) wire was extruded with hydrostatic extrusion process in cold condition. A vertical type 900kN hydrostatic extruder has been developed. The extruder was facilitated with high pressure container which are available for hot and cold forming. The container endured 1400MPa internal pressure and extrusion ratio To was achieved in cold forming for Au fine wire which had $600{\mu}m$ diameter. In contrast to the conventional macroscopic-sized-billet fine-wire requires higher extrusion pressure and effect of friction is much more significant.

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K-Band용 SEmi-MMIC Hair-pin 공진발진기 (A Semi-MMIC Hair-pin Resonator Oscillator for K-Band Application)

  • 이현태
    • 한국통신학회논문지
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    • 제25권9B호
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    • pp.1635-1640
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    • 2000
  • 본 논문에서는 기본파를 억제시키고 2차 고조파가 주 발진신호로 동작되는 18GHz 대역의 push-push 발진기를 semi-MMIC 형태로 설계 및 제작하였다. 마이크로스트립 선로를 포함하는 passive component는 semi-insulating GaAs 기판위에 MMIC 공정을 이용하여 구현하고, Chip 형태의 P-HEMT, 저항, 캐패시터를 Au wire-bonding에의해 연결하였으며, via-hole 대신 접지면을 회로 주변에 구성하여, back-side와 wire-bonding하였다. 실험 결과 -10.5 dBm의 출력 전력 특성을 얻었으며, 기본 주파수 억압은 -17.3 dBc/Hz의 특성을 보였다. 위상 잡음은 100kHz offset에서 -97.7 dBc/Hz를 얻었다.

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Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

  • Lee, Seung-Hoon;Shin, Muncheol;Hwang, Seongpil;Park, Sung Heum;Jang, Jae-Won
    • Bulletin of the Korean Chemical Society
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    • 제34권6호
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    • pp.1845-1847
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    • 2013
  • The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.