• Nuclear Engineering and Technology
• /
• v.38 no.2
• /
• pp.119-128
• /
• 2006

We start to develop a predictable technology for thermal-hydraulic performance of the RMWR core using an advanced numerical simulation technology. As a part of this technology development, we are developing the advanced interface tracking method to improve the conservation of volume of fluid. The present paper describes a part of the development of the twophase flow simulation code TPFIT with the advanced interface tracking method. The numerical results applied to large-scale water-vapor two-phase flow in tight lattice rod bundles are shown and compared with experimental results. In the results of numerical simulation, a tendency of the predicted void fraction distribution in horizontal plane agreed with the measured values obtained by the advanced neutron radiography technique including the bridge formation of the liquid at the position of adjacent fuel rods where an interval is the narrowest.

• Journal of the Korean Ceramic Society
• /
• v.50 no.1
• /
• pp.37-42
• /
• 2013

Tristructural-isotropic (TRISO)-coated particles were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for use in a very high temperature gas-cooled reactor (VHTR). ZrC as a constituent layer of TRISO coating layers was deposited by a chloride process using $ZrCl_4$ and $CH_4$ source gases in a temperature range of $1400^{\circ}C$ and $1550^{\circ}C$. The change in the microstructure of ZrC depending on the deposition temperature and its effect on the hardness were evaluated. As the deposition temperature increased to $1500^{\circ}C$, the grain size of the ZrC increased and the hardness of the ZrC decreased according to the Hall-Petch relationship. However, at $1550^{\circ}C$, the ZrC layer was highly non-stoichiometric and carbon-rich and did not obey the Hall-Petch relationship in spite of the decrease of the grain size. A considerable amount of pyrolytic carbon at the grain boundaries of the ZrC as well as coarse granular pyrolytic carbon were locally distributed in the ZrC layer deposited at $1550^{\circ}C$. Therefore, the hardness decreased largely due to the formation of a large amount of pyrolytic carbon in the ZrC layer.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2018.11a
• /
• pp.103-103
• /
• 2018

The liquid cathode processing is necessary to separate cadmium from the actinide elements in the pyroprocessing since the actinide deposits are dissolved or precipitated in a liquid cathode. Distillation process was employed for the cathode processing owing to the compactness. It is very important to avoid a splattering of cadmium during evaporation due to the high vapor pressure. Several methods have been proposed to lower the splattering of cadmium during distillation. A multi-layer porous round cover was proposed to avoid a cadmium splattering in our previous study. In this study, distillation behavior of $Cd-ZrO_2$ and Cd - Bi systems were investigated to examine a multi-layer porous round cover for the development of the cadmium splatter shield of distillation crucible. It was designed that the cadmium vapor can be released through the holes of the shield, whereas liquid drops can be collected in the multiple hemisphere. The cover was made with three stainless steel round plates with a diameter of 33.50 mm. The distance between the hemispheres and the diameter of the holes are 10 and 1 mm, respectively. Bismuth or zirconium oxide powder was used as a surrogate for the actinide elements. About 40 grams of Cd was distilled at a reduced pressure for two hours at various temperatures. The mixture of the cadmium and the surrogate was distilled at 470, 570 and $620^{\circ}C$ in the crucible with the cover. Most of the bismuth or zirconia remained in the crucible after distillation at 470 and $570^{\circ}C$ for two hours. It was considered that the crucible cover hindered the splattering of the liquid cadmium from the distillation crucible. A considerable amount of the surrogate material reduced after distillation at $620^{\circ}C$ due to the splattering of the liquid cadmium. The low temperature is favorable to avoid a liquid cadmium splattering during distillation. However, the optimum temperature for the cadmium distillation should be decided further, since the evaporation rate decreases with a decreasing temperature.

• Journal of Soil and Groundwater Environment
• /
• v.20 no.3
• /
• pp.34-40
• /
• 2015

Studies using stable water vapor isotopes have been recently conducted over the past two decades because of difficulties in analysis and sample collection in the past. Stable water vapor isotope data provide information of the moisture transport from ocean to continent, which are also used to validate an isotope enabled general circulation model for paleoclimate reconstructions. The isotopic compositions of groundwater and water vapor also provide a clue to how moisture moves from soil to atmosphere by evapotranspiration. International Atomic Energy Agency designates the stations over the world to observe the water vapor isotopes. To analyze the water vapor isotopes, a cryogenic sampling method has been used over the past two decades. Recently, two types of laser-based spectroscopy have been developed and remotely sensed data from satellites have the global coverage. In this review, measurements of isotopic compositions of water vapor will be introduced and some studies using the water vapor isotopes will also be introduced. Finally, we will suggest the future study in Korea.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.110.1-110.1
• /
• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Restorative Dentistry and Endodontics
• /
• v.10 no.1
• /
• pp.85-92
• /
• 1984

The aim of this study was to examine the influence of the speed of grinding and coolants on mercury vaporization during amalgam removal. Forty amalgam filled stone dies were stored at $37^{\circ}C$ and 100% relative humidity for 7 days prior to the beginning of the mercury vapor experiment and were divided into 4 different groups; In Group I; Used by high speed without coolant & evacuator during amalgam removal. In Group II; Used by high speed with coolant & evacuator during amalgam removal. In Group III; Used by low speed without coolant & evacuator during amalgam removal. In Group IV; Used by low speed with coolant & evacuator during amalgam removal. The amalgam specimens were removed in a 30-second time period and mercury vapor was collected with membrane filter at 27mm from the site of removal and 45 degree above there. Samples in Group II, IV were removed with coolant spray at a flow rate of 30 ml/min with high-velocity evacuator. Mercury vapor collected membrane filter was analysed by Atomic Absorption Spectrophotometer using cold vapor method. The results were as follows; 1. The mercury vapor levels were obtained all of the Groups. 2. The mercury vapor levels of the Group II, IV (with coolant & evacuator) were less than that of the Group I, III (without coolant & evacuator). 3. The highest mercury vapor level recorded during amalgam removal procedure was Group I (used by high speed without coolant & evacuator) and its record was $0.78{\pm}0.09\;mg/m^3$, which exceed the T.L.V. by 15 times. 4. The mercury vapor level of the Group IV (used by low speed with coolant & evacuator) was more than that of the Group II (used by high speed with coolant & evacuator), but its difference was not significant, statistically. (p > 0.05)

• Journal of the Korean Society for Heat Treatment
• /
• v.28 no.1
• /
• pp.7-16
• /
• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.239.2-239.2
• /
• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• Macromolecular Research
• /
• v.11 no.6
• /
• pp.495-500
• /
• 2003

UV-induced graft polymerization of glycidyl methacrylate (GMA) to a polypropylene (PP) membrane was carried out in the vapor phase with benzophenone (BP) as a photoinitiator. Attenuated total reflection Fourier transform infrared spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM) were utilized to characterize the copolymer. The degree of grafting increased with increasing reaction time, increased UV irradiation source intensity, and increased immersion concentration of the BP solution. The optimum synthetic condition for the PP-g-GMA membrane was obtained with a reaction time of 2 hrs, a UV irradiation source intensity of 450 W, and an immersion concentration of the BP solution of 0.5 mol/L. The pure water flux decreased upon increasing the degree of grafting and increasing the amount of diethylamino functional group introduced. The analysis of AFM and SEM images shows that the graft chains and diethylamino groups of PP-g-GMA grew on the PP membrane surface, resulting in a change in surface morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.791-794
• /
• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.