• 한국환경과학회지
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• 제21권8호
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• pp.891-899
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• 2012

The chlorination pattern of naphthalene vapor when passed through a 1 cm particle bed of 0.5% (mass) copper (II) chloride ($CuCl_2$) mixed with silicon dioxide ($SiO_2$) was studied. Gas streams consisting of 92% (molar) $N_2$, 8% $O_2$ and 0.1% naphthalene vapor were introduced to an isothermal flow reactor containing the $CuCl_2/SiO_2$ particle bed. Chlorination of naphthalene was studied from 100 to $400^{\circ}C$ at a gas velocity of 2.7 cm/s. Mono through hexachlorinated naphthalene congeners were observed at $250^{\circ}C$ whereas a broader distribution of polychlorinated naphthalenes (PCNs) including hepta and octachlorinated naphthalenes was observed at $300^{\circ}C$. PCN production was peak at $250^{\circ}C$ with 3.07% (molar) yield, and monochloronaphthalene (MCN) congeners were the major products at two different temperatures. In order to assess the effect of a residence time on naphthalene chlorination, an experiment was also conducted at $300^{\circ}C$ with a gas velocity of 0.32 cm/s. The degree of naphthalene chlorination increased as a gas velocity decreased.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.56-60
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• 2000

Cube texture를 갖는 Ni기판위에 MOCVD(Metal Chemical Vapor Deposition)를 이용하여 NiO, CeO$_2$, YBCO 박막을 제조하였다. NiO(200)와 CeO$_2$(200) buffer layer는 450${\sim}$470$^{\circ}$C에서 10분간 MOCVD방법으로 (100)<001>Ni 기판위에 직접 증착하였다. 제조된 NiO, CeO$_2$ buffer layer는 조직이 치밀하며 표면의 상태가 매우 좋으며 Ni기판 위에 epitaxial하게 성장하였다. NiO는 Ni기판과 NiO<100>//Ni<100>의 방위관계를 가지고 성장하였으며, CeO$_2$는 증착조건에 따라 CeO$_2$ <100>//Ni<100> 및 CeO$_2$ <110>//Ni<100> 의 방위관계를 가지고 성장하였다. 증착된 NiO막과 CeO$_2$막에서 균열은 발생하지 않았다. MOCVD법으로 표면에 biaxial texture를 갖는 ceramic buffer를 증착시킨 NiO/Ni및 CeO$_2$/Ni 기판위에 YBCO박막을 MOCVD법으로 제조하였다. YBCO막은 기판온도 800$^{\circ}$C,증착압력 10torr, 산소분압을 0.7torr로 하여 10분간 행하였다. 공급원료의 조성에 따라 YBCO의 막의 texture와 형성되는 상이 변화되었다. NiO/Ni및 CeO$_2$/Ni 기판 위에 증착된 YBCO막은 c축 배향성을 가지고 성장하였으며, -scan 및 ${\varphi}$ -scan으로 측정한 (500)면의 in-plane과 (110)면의 out-of-plane의 FWHM(Full Width Half Maximum)값은 각각 10$^{\circ}$ 미만으로 우수하였다.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.701-706
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• 2008

이송식 아크 열플라즈마를 이용하여 벌크상태의 니켈을 증발시킨 후 급속한 냉각과정을 거쳐 니켈 나노입자를 합성하였다. 플라즈마에 의해 질소가 용이하게 해리되어 용융된 니켈속으로 용해되고 과포화된 질소원자는 질소 분자로 가스화반응을 하여 반응열을 발산하는데 그 반응열에 의해 다량의 니켈증기가 생성된다. 생성된 니켈증기는 희석가스와 냉각가스를 이용하여 나노 입자 크기의 니켈분말로 제조된다. 희석가스 유량이 증가할수록 입자크기는 감소하였으며 그 분포경향이 작은 크기에서 좁게 나타났다. 평균입자크기는 희석가스 유량이 250 l/min에서 202 nm로 분석되었으며 모든 입자는 250 nm 이하 크기에서 존재함을 확인하였다.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2019년도 춘계학술논문요약집
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• pp.69-69
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• 2019

The distillation of liquid cathode is necessary to separate cadmium from the actinide elements in the pyroprocessing since the actinide deposits are dissolved or precipitated in a liquid cathode. It is very important to avoid a splattering of cadmium during evaporation due to the high vapor pressure. Several methods have been proposed to lower the splattering of cadmium during distillation. One of the important methods is an installation of crucible cover on the distillation crucible. A multi-layer porous round cover was proposed to avoid a cadmium splattering in our previous study. In this study, the effect of crucible cover on the cadmium distillation was examined to develop a splatter shield. Various surrogates were used for the actinides in the cadmium. The surrogates such as bismuth, zirconia, and tungsten don't evaporate at the operational temperature of the Cd distiller due to their low vapor pressures. The distillation experiments were carried out in a crucible equipped with cover and in a crucible without cover. About 40 grams of Cd was distilled at a reduced pressure for two hours at various temperatures. The mixture of the cadmium and the surrogate was heated at $470{\sim}620^{\circ}C$. Most of the bismuth remained in the crucible equipped with cover after distillation under $580^{\circ}C$ for two hours, whereas small amount of bismuth decreased in the crucible without cover above $580^{\circ}C$. The liquid bismuth escaped with liquid cadmium drop from the crucible without cover. It seems that the crucible cover played a role to prevent the splash of the liquid cadmium drop. The effect of the cover was not clear for the tungsten or zirconia surrogate since the surrogates remained as a solid powder at the experimental temperature. From the results of this work, it can be concluded that the crucible cover can be used to minimize the deposit loss by prevention of escape of liquid drop from the crucible during distillation of liquid cathode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.395-395
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• 2008

Water-assisted synthesis of carbon nanotubes (CNTs) has been intensively studied in recent years, reporting that water vapor enhances the activity and lifetime of metal catalyst for the CNT growth. While most of these studies has been focused on the supergrowth of CNTs at high temperature, rarely has the similar approach been made for the CNT synthesis at low temperature. Since the metal catalyst are much less active at lower temperature, we expect that the addition of water vapor may increase the activity of catalyst more largely at lower temperature. We synthesized multi-walled CNTs at temperature as low as $360^{\circ}C$ by introducing water vapor during growth. The water addition caused CNTs to grow ~3 times faster. Moreover, the water-assisted growth prolonged the termination of CNT growth, implying the enhancement of catalyst lifetime. In general, a thinner catalyst layer is likely to produce smaller-diameter, longer CNTs. In a similar manner, the water vapor had a greater effect on the growth of CNTs for a smaller thickness of catalyst in this study. To figure out the role of process gases, CNTs were grown in the first stage and then exposed to each of process gases in the second stage. It was shown that water vapor and hydrogen did not etch CNTs while acetylene led to the additional growth of CNTs even faster in the second stage. As-grown CNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and Raman spectroscopy.

• Nuclear Engineering and Technology
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• 제28권2호
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• pp.103-117
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• 1996

본 논문에서는 증기폭발의 전파과정을 해석하기 위한 수학적 모델을 제시하였다. 이 모델은 용융물, 용융파편, 그리고 냉각재 기상과 액상 등 4상 유체의 2차원적인 천이거동을 지배방정식 및 관련상관식의 수치적 해를 구함으로서 예측할 수 있다. 모델에 사용된 주요 상관식은 용융물 분쇄, 냉각재 상변화, 에너지 교환, 그리고 운동량 교환항으로 구성되어 있다. 그리고, 냉각재(물)의 상태방정식은 냉각재의 기상과 액상 사이의 열역학적 인 비평형을 허용할 수 있는 독특한 형태로 구성되었다. 주석 /물의 중기폭발에 대한 예제계산을 수행한 결과 본 모델이 폭발의 전파속도 및 압력 -비록 그 정량적인 값은 관련상관식의 인자들에 좌우되지마는- 등의 증기폭발 전파과정의 주요현상을 적절히 모사할 수 있음을 알 수 있었다. 또한 중요한 초기변수(중기 분율, 용융물 분율) 및 관련상관식에 대한 민감도 분석도 수행되었다.

• Journal of Radiation Protection and Research
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• 제17권1호
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• pp.1-10
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• 1992

물분자와 전리방사선과의 상호작용에 의하여 생성된 방사능극소입자에 관한 많은 연구결과가 보고되어 왔으며, 특히 이전 연구에서는 물분자의 방사성분해에 의해 발생한 수산화라디칼의 높은 농도는, 유기물기체와 같은 실내기체와 반응즉시 낮은 증기압의 화학물로 변하여 극소입자가 된다고 알려져 왔다. 본 연구에서는, 라돈의 첫째딸핵종인 Po-218에 대한 물분자와의 의존성을 조사할 목적으로, 실내기체의 최적제어가 가능한 라돈챔버를 사용하여 일련의 실험들을 수행하였다. 특별히 설계 제작된 평행등급 금속망필터시스템을 사용하여, 서로 다른 습도조건하에서 0.5-100nm 크기의 라돈딸핵종에 대한 방사능크기분포도가 얻어졌으며, 그 결과가 분석되었다. 라든가스챔버내에 수증기분자의 첨가와 동 수증기분자의 방사성분해에 의하여 생성된 수산화라디칼에 의한 극소입자들의 형성을 확인하였는데 이는 수증기의 방사성분해과정에서 Po-218이온과 수증기분자 사이에 중화과정 때문인 것으로 밝혀졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Carbon letters
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• 제13권4호
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.