• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.249-254
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• 2009

In our study, the Hanle spectrum and nonlinear magneto-optic effect (NMOE) signals were observed as a function of magnetic field on $D_1$ line of $^{87}Rb$ atoms contained in a paraffin coated vapor cell. We observed the double structure from the Hanle and the NMOE spectrum in the paraffin coated Rb vapor cell. The narrow spectral width of the narrow resonance signal is approximately 1 kHz and the magnitude is approximately 10 percent of the total spectrum. Also, the NMOE signals corresponding to the Hanle configuration consisted of two different dispersion-like features. At the near zero magnetic field, a sharp slope signal was centered, and its value was 10 mV/${\mu}T$ with laser power was $200{\mu}W$.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Polymer(Korea)
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• v.35 no.4
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• pp.370-374
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• 2011

A conductive PANI solution was successfully fabricated by doping with camphorsulfonic acid and the polymerization of aniline and the confirmation of doping were characterized by FTIR spectroscopy. In organic thin film transistors, PANI gate electrodes were spin-coated on a PES substrate and their conductivity variations were monitored by a 4-probe method with different annealing temperatures. The surface properties of PANI thin films were investigated by an AFM and an optical microscope, OTFTs with PANI gate electrode had characteristics of carrier mobility as large as 0.15 $cm^2$/Vs and on/off ratio of $2.4{\times}10^6$, Au gate OTFTs with the same configuration were fabricated to investigate the effect of polymer gate electrode for the comparison of device performances. We could obtain the comparable performances of PANI devices to those of Au gate devices, resulting in an excellent alternative as an electrode in flexible OTFTs instead of an expensive Au electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Journal of the Mineralogical Society of Korea
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• v.27 no.1
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• pp.1-15
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• 2014

Probing the electronic structures of crystalline Mg-silicates at high pressure is essential for understanding the various macroscopic properties of mantle materials in Earth's interior. Quantum chemical calculations based on the density functional theory are used to explore the atomic configuration and electronic structures of Earth materials at high pressure. Here, we calculate the partial density of states (PDOS) and O K-edge energy-loss near-edge structure (ELNES) spectra for $MgSiO_3$ perovskite at 25 GPa and 120 GPa using the WIEN2k program based on the full-potential linearized projected augmented wave (FP-LPAW) method. The calculated PDOS and O K-edge ELNES spectra for $MgSiO_3$ Pv show significant pressure-induced changes in their characteristic spectral features and relative peak intensity. These changes in spectral features of $MgSiO_3$ Pv indicate that the pressure-induced changes in local atomic configuration around O atoms such as Si-O, O-O, and Mg-O length can induce the significant changes on the local electronic structures around O atoms. The result also indicates that the significant changes in O K-edge features can results from the topological densification at constant Si coordination number. This study can provide a unique opportunity to understand the atomistic origins of pressure-induced changes in local electronic structures of crystalline and amorphous $MgSiO_3$ at high pressure more systematically.

• Journal of Radiation Protection and Research
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• v.39 no.3
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• pp.150-158
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• 2014

Radiation-related practitioners and radiation-treated patients at medical institutions are inevitably exposed to radiation for diagnosis and treatment. Although standards for maximum doses are recommended by the International Commission on Radiological Protection (ICPR) and the International Atomic Energy Agency (IAEA), more direct and available measurement and analytical methods are necessary for optimal exposure management for potential exposure subjects such as practitioners and patients. Thus, in this study we developed a system for real-time radiation monitoring at a distance that works with existing portable device. The monitoring system comprises three parts for detection, imaging, and transmission. For miniaturization of the detection part, a scintillation detector was designed based on a silicon photomultiplier (SiPM). The imaging part uses a wireless charge-coupled device (CCD) camera module along with the detection part to transmit a radiation image and measured data through the transmission part using a Bluetooth-enabled portable device. To evaluate the performance of the developed system, diagnostic X-ray generators and sources of $^{137}Cs$, $^{22}Na$, $^{60}Co$, $^{204}Tl$, and $^{90}Sr$ were used. We checked the results for reactivity to gamma, beta, and X-ray radiation and determined that the error range in the response linearity is less than 3% with regard to radiation strength and in the detection accuracy evaluation with regard to measured distance using MCNPX Code. We hope that the results of this study will contribute to cost savings for radiation detection system configuration and to individual exposure management.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.

• Journal of Radiation Protection and Research
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• v.37 no.1
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• pp.16-24
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• 2012

In the present study, a gamma-ray detector and associated signal processing circuit was developed for a side-absorber of a dual-mode Compton camera. The gamma-ray detector was made by optically coupling a CsI(Tl) scintillation crystal to a silicon photodiode. The developed signal processing circuit consists of two parts, i.e., the slow part for energy measurement and the fast part for timing measurement. In the fast part, there are three components: (1) fast shaper, (2) leading-edge discriminator, and (3) TTL-to-NIM logic converter. AC coupling configuration between the detector and front-end electronics (FEE) was used. Because the noise properties of FEE can significantly affect the overall performance of the detection system, some design criteria were presented. The performance of the developed system was evaluated in terms of energy and timing resolutions. The evaluated energy resolution was 12.0% and 15.6% FWHM for 662 and 511 keV peaks, respectively. The evaluated timing resolution was 59.0 ns. In the conclusion, the methods to improve the performance were discussed because the developed gamma-ray detection system showed the performance that could be applicable but not satisfactory in Compton camera application.

• Nuclear Engineering and Technology
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• v.3 no.2
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• pp.65-75
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• 1971

The gamma-ray shielding effects of magnetite concretes have been measured using a broad beam Co-60 gamma-ray source. Mathematical formulae for a trans-mission ratio-to-shield thickness relation were derived from the attenuation curve obtained experimentally and are I (x) = I (ο) exp(-$\mu$X) exp(1.03$\times$10$^{-1}$ X-3.38$\times$10$^{-3}$ X$^2$＋5.29$\times$10$^{-5}$ X$^3$) when X< 20 cm, I (x) =I (ο) exp(-$\mu$X) exp(4.66$\times$10$^{-2}$ X＋2.12$\times$10$^{-1}$ ) when X＞20 cm. Here I (x) is radiation intensity after passing through a thickness X of absorber, I(o) is the initial radiation intensity, $\mu$ is the linear attenuation coefficient of magnetite concrete and is given by (0.0532$\rho$＋ 0.0083)$^{4)}$ $cm^{-1}$ / in accordance with an earlier study, and X is the thickness of absorber. In addition, a model shield which is a rectangular magnetite concrete box with walls of 8cm thickness walls and internal demensions of 40$\times$40$\times$40 cm was constructed and its shielding effect has been measured. The emergent radiation flux appears to be greater with this configuration than with a slab shield of equal thickness.