• Title/Summary/Keyword: Asymmetric dependence

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Vibration-Rotation Coupling in a Quasilinear Symmetric Triatomic Molecule

  • Lee, Jae-Shin
    • Bulletin of the Korean Chemical Society
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    • v.15 no.3
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    • pp.228-236
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    • 1994
  • The effect of the vibration mode coupling induced by the vibration-rotation interaction on total energy was investigated for the states with zero total angular momentum(J=0) in a quasilinear symmetric triatomic molecule of $AB_2$ type using a model potential function with a slight potential barrier to linearity. It is found that the coupling energy becomes larger for the levels of bend and asymmetric stretch modes and smaller for symmetric stretch mode as the excitation of the vibrational modes occurs. The results for the real molecule of $CH_2^+$, which is quasilinear, generally agree with the results for the model potential function in that common mode selective dependence of coupling energy is exhibited in both cases. The differences between the results for the model and real potential function in H-C-H system are analyzed and explained in terms of heavy mixing of the symmetric stretch and bend mode in excited vibrational states of the real molecule of $CH_2^+$. It is shown that the vibrational mode coupling in the potential energy function is primarily responsible for the broken nodal structure and chaotic behavior in highly excited levels of $CH_2^+$ for J= 0.

The Study of Steering Effect in Multilayer Growth (두꺼운 박막 성장시 Steering 효과 연구)

  • Seo J.;Kim J.S.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.410-420
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    • 2006
  • The dynamic effects, such as the steering and the screening effects during deposition on an epitaxial growth is studied by kinetic Monte Carlo simulation. In the simulation, we incorporates molecular dynamic simulation to rigorously take the interaction of the deposited atom with the substrate atoms into account, We find three characteristic features of the surface morphology developed by grazing angle deposition: (1) enhanced surface roughness, (2) asymmetric mound, and (3) asymmetric slopes of mound sides, Regarding their dependence on both deposition angle and substrate temperature, a reasonable agreement of the simulated results with the previous experimental ones is found. The characteristic growth features by grazing angle deposition are mainly caused by the inhomogeneous deposition flux due to the steering and screening effects, where the steering effects play the major role rather than the screening effects. Newly observed in the present simulation is that the side of mound in each direction is composed of various facets instead of all being in one selected mound angle even if the slope selection is attained, and that the slope selection does not necessarily mean the facet selection.

Analysis of Luminous Characteristics of White LEDs Depending on Yellow Phosphors (황색 형광체의 종류에 따른 백색 LED 광원의 발광 특성 분석)

  • Choi, Hyun-Woo;Ko, Jae-Hyeon
    • Korean Journal of Optics and Photonics
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    • v.24 no.2
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    • pp.64-70
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    • 2013
  • In this paper, two white light emitting diodes(LEDs) were manufactured by using two kinds of yellow phosphor, YAG:Ce and $(Sr,Ba)_2SiO_4:Eu$, and their spectroscopic properties were compared and analyzed. We found that the asymmetric double sigmoidal function can be applied to both white LEDs to obtain the center wavelength, the half width, and the skewness parameters. According to this analysis, the half width of the emitting spectrum of silicate phosphor was smaller than that of YAG phosphor, indicating smaller color rendering index. However, the silicate phosphor exhibited better color stability depending on the driving current than the YAG phosphor. The current dependence of the luminous efficacy of both white LEDs was investigated, which showed that efficacy decreased monotonically with current. The efficacy of the silicate-based white LED was lower than that of the YAG-based LED by about 10~12 lm/W.

Luminescence properties of asymmetric double quantum well composed of $Al_xGa_{l-x}As/AlAs/GaAs$ system ($Al_xGa_{l-x}As/AlAs/GaAs$계로 이루어진 비대칭 이중 양자우물 구조에서의 광 luminescsnce 특성 연구)

  • 정태형;강태종;이종태;한선규;유병수;이해권;이정희;이민영;김동호
    • Korean Journal of Optics and Photonics
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    • v.3 no.3
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    • pp.183-190
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    • 1992
  • Luminescence properties of asymmetric double quantum well structure composed of $Al_x/Ga_{1-x}$ /As AIAs/GaAs have been studied by steady state and time-resolved photoluminescence and phtoluminescence excitation spectroscopy at low temperature. Two quantum well samples with different barrier thickness (15$\AA$ and 150$\AA$) were prepared to investigate the dependence of tunneling characteristics on barrier thickness. The abscence of excitonic recombination peak from $Al_x/Ga_{1-x}$As well for the 15$\AA$ barrier sample indicates a very fast electron tunneling to GaAs well. Meanwhile, T-X transition between well and barrier is supposed to be a major route for the fast decay of luminescence from $Al_x/Ga_{1-x}$As well in the 150$\AA$ barrier sample. Time-resolved photduminescence from GaAs well of 15$\AA$ sample shows the exsitence of the rise with 100 ps which is attributed to the hole tunneling.

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The Asymmetric Relationship between Output Volatility and Growth : Evidence from the U.K. Industrial Production (영국 산업생산 자료에 나타난 성장률과 변동성간의 비대칭적 관계)

  • Kim, Jan R.
    • International Area Studies Review
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    • v.14 no.3
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    • pp.86-107
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    • 2010
  • Prior research on the relationship between output volatility and growth has produced mixed results, failing to provide clear empirical evidence on the sign of the relationship. In this paper, we raise the possibility that such failure is due to misspecification in empirical models previously used, i.e., not taking into account the business cycle dependence of the volatility-growth relation. We set off with the conjecture that higher volatility exerts qualitatively different effect on growth depending on whether the economy is in expansion or contraction. We estimate a series of ARCH-type models with the monthly industrial production data of the U.K., and find strong evidence suggesting that the volatility-growth relation is positive when the economy is in expansion, while higher volatility lowers growth rate in the contraction phase. We also find evidence supporting that the volatility-growth relation estimated in the paper captures a a causal relation, not a bidirectional correlation.

A Criticism of Path Dependence in the Broadcasting Programming Regulation : Focusing on Regulation of Programming Quotas (방송편성규제의 경로의존성 비판과 개선방향 : 편성비율규제를 중심으로)

  • Hong, Won-Sik
    • Journal of Korea Entertainment Industry Association
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    • v.14 no.6
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    • pp.1-11
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    • 2020
  • With the activation of OTT and VOD services, the viewing behavior is rapidly changing, but the programming regulation has not escaped the ratio regulation in the same way as in the past. Therefore, this paper aims to examine the policy validity of the current organization ratio regulation and to suggest improvement directions based on this. To this end, the policy objectives and background at the time of the introduction of the domestic organization ratio regulation were considered and compared with the current status of the broadcasting market. As a result, this study found that it is difficult to apply the logical framework of asymmetric regulation at the time of the formation ratio regulation into the current status of broadcasting market, the existing framework was established and hold in the mutual relationship of various stake holders formed based on the asymmetric regulation. It was pointed out that the typical pattern of path dependency repeating only fine adjustment of ratio was shown. Based on this, this study suggests that it needs to be divided into the regulation by the public interest and the regulation by the industrial purpose according to the purpose of regulation, and it is necessary to be limited to the direct regulation corresponding to the public interest of the viewer. Also this study proposes that it is necessary to separate the regulation from promotion policies as well as to resolute asymmetric regulation in broadcasting policies.

Fatigue Characteristics of PZT Thin Films Deposited by ECR-PECVD

  • Chung, Su-Ock;Lee, Won-Jong
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.177-185
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    • 2005
  • Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

Analysis of Sensing Mechanisms in a Gold-Decorated SWNT Network DNA Biosensor

  • Ahn, Jinhong;Kim, Seok Hyang;Lim, Jaeheung;Ko, Jung Woo;Park, Chan Hyeong;Park, Young June
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.153-162
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    • 2014
  • We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

Prototype Milli Gauss Meter Using Giant Magnetoimpedance Effect in Self Biased Amorphous Ribbon

  • Kollu, Pratap;Yoon, Seok-Soo;Kim, Gun-Woo;Angani, C.S.;Kim, Cheol-Gi
    • Journal of Magnetics
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    • v.15 no.4
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    • pp.194-198
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    • 2010
  • In our present work, we developed a GMI (giant magnetoimpedance) sensor system to detect magnetic fields in the milli gauss range based on the asymmetric magnetoimpedance (AGMI) effect in Co-based amorphous ribbon with self bias field produced by field-annealing in open air. The system comprises magnetoimpedance sensor probe, signal conditioning circuits, A/D converter, USB controller, notebook computer, and program for measurement and display. Sensor probe was constructed by wire-bonding the cobalt based amorphous ribbon with dimensions $10\;mm\;{\times}\;1\;mm\;{\times}\;20\;{\mu}m$ on a printed circuit board. Negative feedback was used to remove the hysteresis and temperature dependence and to increase the linearity of the system. Sensitivity of the milli gauss meter was 0.3 V/Oe and the magnetic field resolution and environmental noise level were less than 0.01 Oe and 2 mOe, respectively, in an unshielded room.

Electrical Properties of (Ba, Sr)TiO$_3$ Thin Film Deposited on RuO$_2$Electrode

  • Park, Chi-Sun;Kim, In-Ki
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.4
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    • pp.30-39
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    • 2000
  • The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.

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