• Macromolecular Research
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• v.11 no.1
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• pp.9-13
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• 2003

Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV)F$^{2+}$ and Cl$^{2+}$ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 10$^{11}$ to 3 $\times$ 10$^{14}$ ions/$\textrm{cm}^2$. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H$_2$ molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF$_2$ molecules in the MeV ion-implanted PVDF samples.les.

• Journal of Environmental Science International
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• v.9 no.4
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• pp.319-323
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• 2000

Nitrate-selective ion exchange resin which have bulky tertiary amine as functional group have been synthesized by the reaction of chloromethylated polystyrene-divinylbenzene copolymer and the corresponding tertiary amine [$NR_3=NE_{t3} 1, N{(C_2 H_4 H_3)}_32]$in ethanol, while commercial resin has $NMe_3$ as functional group. The fundamental properties such as bulk density, water content, appearance index, exchange capacity, effective size, uniformity coefficient of synthesized anion exchange resin (1) have been measured. The ion exchange resin (1) and (2) exhibited the better selectivity for nitrate than sulfate in both batch and continuous column experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.198-201
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• 2006

In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.498-499
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• 2007

In this paper, we report on a study of the electrode/electrolyte interfaces of MCMB/$LiCoO_2$ cell using Ion-chromatography. The cells for the experiments were preconditioned by cycling three times and stabilized at OCV of 3.0V 4.35V and 4.5V. The stabilized cathode electrode was used for surface characterization investigations. Concerning the $LiCoO_2$/electrolyte interfaces, the result obtained have shown the presence of $F^-\;and\;CO_3^{2-}$ on the surface of cathode electrode as well as increasing the concentration of ions as cell voltage increase.

• Journal of Environmental Science International
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• v.6 no.3
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• pp.225-229
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• 1997

A halophilic V. vulnificus is an estuarine microorganism that has been associated with fatal wound Infection and life-threatening septicemia. Hemolysin is defined as toxic substance produced by various species of bacteria Including V. vulnificus. Hemolysin from marine V. vulnificus was purified and the effect of pH, temperature. metal ion on the activity of hemolysin, and thermostability of hemolysin were tested in this study. Hemolysin iysed the sheep red blood cell and the optimum pH was 8.0, the optimum temperature was 4$0^{\circ}C$, and $K^+$ increased but $Mn^{2+}$ decreased the hemolyic activity of hemolysin, but hemolysin was unstable to heat.

• Progress in Medical Physics
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• v.2 no.2
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• pp.155-160
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• 1991

We have studied the effective point of measurement for cylindrical ion chamber in water phantom for medical electron beams. Markus parallel plate chamber water phantom are used for the measurement of depth dose to determine the depth of the effective point of measurement for various energies(for electron 6MeV, 9MeV, 12MeV, 16MeV, and 20MeV; Co-60; for photon 6MV, 15MV). Cylindrical ion chambes(PTW233643 with r=2.75mm, PR-05P with r=2mm, and PM30 wiht r=15mm are used for the measurement of depth dose by same mtethod and the values of d$\_$50/ and R$\_$p/ obtained by three cylindrical chambers were compared with those of a flat chamber. From this we could evaluate the effective measuring points of cylindrical ion chamber. The effective point of measurement was estimated as 0.4～0.6r shifted toward surface from the center of the chamber for electron beam, 0.3～0.7r for $\^$60/Co X-ray.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.97.2-97.2
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• 2012

This study examined the utility of two zwitterions, nitrile-functionalized zwitterions and a zwitterion without a nitrile group (MF-ZI), were used as additives along with 1 M $LiPF_6$ in ethylene carbonate (EC):diethylene carbonate (DEC) (3:7 V/V) (E-0) to form an electrolyte solution for use in lithium ion batteries comprising graphite and $LiCoO_2$ electrodes. The presence of NF-ZI (E-NF-ZI) in the electrolyte produced an ion conductivity comparable to that of E-0 and higher than that of an electrolyte containing MF-ZI (E-MF-ZI). Linear sweep voltammetry data revealed that the intensity of the E-NF-ZI reduction peak was lower than that of E-0. Furthermore, the successful formation of an SEI layer in the E-NF-ZI over graphite was confirmed by cyclic voltammetry data. These results were attributed to the adsorption of NF-ZI on the electrode surface, as verified by differential capacity measurements.

• Applied Microscopy
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• v.36 no.spc1
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• pp.25-33
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• 2006

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.95-100
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• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.