• The Korean Journal of Ceramics
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• 제5권2호
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• pp.178-182
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• 1999

Simple binary $Na_2S-SiO_2$ oxysulfide glasses were prepared by a conventional melt-quench method in order to investigate the role of sulfur in glass structure and the electronic state. By X-ray photoelectron spectroscopy(XPS) measurement, S2p binding energy of the glass was observed at approximately 161eV which was close to that of ionic $S^{2-}$. The coordinating state around silicon atoms were investigated by ${29}^Si$ MAS-NMR measurement. The chemical shift observed from NMR supported that sulfur atom was joined to a silicon atom by substituting for an oxygen atom and was present as a non-bridging sulfide ion in low alkali content. On the other hand, it could be presumed that a portion of sulfur anions existed in an isolated state from the glass-network frame at high alkali content. The state of these sulfurs was also studied by Raman spectroscopy in detail.

• 한국산학기술학회논문지
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• 제7권1호
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• pp.7-11
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• 2006

SCM(Scanning Capacitance Method)를 이용하여, SCM 팁의 전계에 의해 형성되는 실리콘내의 공핍영역를 분석할 수 있는 방법론을 구축하였다. 2차원 유한요소법을 이용하여 SCM으로 측정된 결과로부터 불순물의 농도를 도출할 수 있었다. 이 방법은 캐패시턴스, 공핍화된 체적 및 바이어스에 따른 캐패시턴스의 변화율로부터 구해진다. 본 연구에서는 팁의 크기, 산화층 두께 및 가해지는 바이어스에 따른 공핍 전하와 전위에 따른 영향등을 분석하였다.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1989-1991
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. $Li_4Ti_5O_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here $Li_4Ti_5O_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed $Li_4Ti_5O_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of $Li_4Ti_5O_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of $1.0{\sim}3.0V$. Furthermore, the crystalline structure of $Li_4Ti_5O_{12}$ didn't transfer during the lithium intercalation and deintercalation process.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• 한국표면공학회지
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• 제23권2호
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• pp.24-29
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• 1990

The TiN filmms were deposited on the stainless steel substrates by BARE techinique in order to investigate the effects of process parameters such as source-to-substate distance (15-35cm), N2 pressure(4$\times$10-10 -1$\times$10-3mb)and bias voltage(O-2000V), on the deposition rate, the concentration ratio [N/Ti] and the surface color of the films. The deposition rate was deduced from the weight measurement, the [N/ti] ratio by ESCA. The deposition rate decreased with a relationship of=40.2/D2 where D was source-to-substrate distance. The effect of the bias voltage and the N2pressure on the deposition rate, however, appeared negligble. The [N/Ti] ratio was in the narrow range of 0.7 tp 0.8 It increased slightly with the N2 partial pressure and deceased with the source-to-substrate distance. It was confired by ESCA that a significant amount of oxygen and carbon was contaminated after deposition in the top surface of TiN films. The surface color of TiN film was changed from light gold yellow to reddish gold yellow with increasing [N/Ti] ratio.

• 한국전기전자재료학회논문지
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• 제34권5호
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• pp.348-356
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• 2021

Field-effect transistors (FETs) are the key elements of conventional electronics; hence, have drawn a lot of research and commercial interests. In recent years, metal halide perovskite materials have achieved a remarkable efficiency of 29.15% in the field of photovoltaics, and have drawn the scientific community's attention to promote their use in the field of optoelectronics, such as FETs and phototransistors. The MAPbI₃ (methylammonium lead iodide) perovskite TFT has achieved a record hole mobility of 21.41 cm²/V-s in the year 2020. In this review, we will briefly discuss the physical structure of MAPbI₃ perovskite and the essential factors that stimulate these devices, together with the role of defects, the ion migration concept, and the implication of both dielectric and electrode materials on the device's performance.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2408-2417
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• 2022

The nanoindentation behavior of P92 steel with thermomechanical treatment under 3.5 MeV Fe¹³⁺ ion irradiation at room temperature, 400 and 700 ℃ was investigated. Pop-in behavior is observed for all the samples with and without irradiation at room temperature, while the temperature dependence of pop-in behavior is only observed in irradiated samples. The average load and penetration depth at the onset of pop-in increase as the irradiation temperature increases, in line with the results of the maximum shear stress. Irradiation induced hardening is exhibited for all irradiated samples, but there is a significant reduction in the hardness of sample irradiated at 700 ℃ in comparison to the samples irradiated at room temperature and 400 ℃. The ratio of hardness to elastic modulus for all samples decreases with increasing penetration depth except for samples at 700 ℃. With the increasing of irradiation temperature, the ratio of the irreversible work to the total work gradually decreases. In contrast, it increases for samples without irradiation.

• 생명과학회지
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• 제16권1호
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• pp.37-43
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• 2006

간극결합은 이웃하는 두 세포 사이에 형성된 이온채널이며 또한 단일세포막에서도 작용한다. 간극결합채널을 형성하는 아미노 말단의 10번째 아미노산 잔기 부위까지가 개폐극성(gating polarity)과 전류-전압관계에 영향을 미친다. 정상적인 Cx32 채널은 음성의 개폐극성과 내향적인 정류현상을 보이는 반면, 음성전하를 띠는 aspartate로 치환된 T8D 채널은 반대의 개폐극성과 직선의 정류현상을 보인다. 이러한 개폐극성과 정류현상의 변화가 전하 자체에 의한 것인지 아니면 아미노 말단의 구조적인 변화에 의한 것인지는 아직 불명확하다. 이러한 문제점을 규명하기 위하여 아미노 말단의 8번째 아미노산 잔기를 cysteine기로 치환시킨 T8C 채널을 만들어 substituted-cysteine accessibility method (SCAM) 방법으로 이 채널의 생물리학적 특성을 조사하고자 하였다. T8C 채널은 정상적인 Cx32 채널처럼 음성의 개폐극성과 내향적인 정류현상을 보였으며, cysteine기로 치환이 정상적인 Cx32 채널의 원래 구조를 변화시키지 않았다는 것을 의미한다. 본 연구에서는 이런 전하효과를 규명하기 위하여 음성 전하를 갖는 MTSES-와 양성전하를 갖는 MTSET+를 사용하였다. MTSES-를 처리하면 T8C 채널은 T8D 채널의 특성처럼 양성의 개폐극성과 직선의 정류현상을 보였다. 그러나 양성전하를 갖는 MTSET+를 처리한 경우에는 T8C 채널은 본래의 특성을 그대로 유지하였다. 작은 분자의 MTS에 의해서 부여된 전하가 아미노 말단의 구조적인 변화를 초래하지는 않을 것으로 생각된다. 따라서 반대의 전하를 띠는 MTSES-와 MTSET+가 서로 상반대는 영향을 미치는 것으로 보아 본 연구에서 관찰된 개폐극성과 전류-전압의 변화는 아미노말단의 구조적인 변화라기보다는 MTS에 의해서 부여된 전하 자체에 기인한다고 할 수 있다. 또한 MTS가 아미노말단의 8번째 부위에 접근하여 반응을 일으킬 수 있다는 결과는 간극결합채널의 아미노말단이 채널의 통로(pore)를 형성한다는 가설을 뒷받침한다.