Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)
- Volume 7 Issue 1
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- Pages.7-11
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- 2006
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- 1975-4701(pISSN)
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- 2288-4688(eISSN)
3차원적 도핑 분포 측정을 위한 SCM 응용 방법
The SCM Method for Three-Dimensional Dopant Profiles
- Lee Jun-Ha (Department of Computer System Engineering, Sangmyung University) ;
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Lee Hoong-Joo
(Department of Computer System Engineering, Sangmyung University)
- Published : 2006.02.01
Abstract
Through SCM modeling, we found that the depletion layer in silicon was of a form of a spherical capacitor with the SCM tip biased. Two-dimensional (2D) finite differential method code with a successive over relaxation (SOR) solver has been developed to model the measurements by SCM of a semiconductor wafer that contains an ion-implanted impurity region. Then, we theoretically analyzed the spherical capacitor and determined the total depleted-volume charge Q, capacitance C, and the rate of capacitance change with bias dC/dV. It is very important to observe the depleted carriers' movement in the silicon layer by applying the bias to the tip. So, we calculated the depleted-volume charge, considering different factors such as tip size, oxide thickness, and applied bias (dc+ac), which have an influence on potential and depletion charges.
SCM(Scanning Capacitance Method)를 이용하여, SCM 팁의 전계에 의해 형성되는 실리콘내의 공핍영역를 분석할 수 있는 방법론을 구축하였다. 2차원 유한요소법을 이용하여 SCM으로 측정된 결과로부터 불순물의 농도를 도출할 수 있었다. 이 방법은 캐패시턴스, 공핍화된 체적 및 바이어스에 따른 캐패시턴스의 변화율로부터 구해진다. 본 연구에서는 팁의 크기, 산화층 두께 및 가해지는 바이어스에 따른 공핍 전하와 전위에 따른 영향등을 분석하였다.
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