• 한국전기전자재료학회논문지
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• 제34권5호
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• pp.342-347
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• 2021

Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba₃V₄O₁₃ - (x) mol BaV₂O₆ system were investigated. The sintered specimens of all compositions consisted of Ba₃V₄O₁₃ and BaV₂O₆, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba₃V₄O₁₃ and BaV₂O₆ phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba₃V₄O₁₃-BaV₂O₆ ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.

• 대한화학회지
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• 제66권6호
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• pp.451-458
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• 2022

LiNi_xMn_yCo_1-(x+y)O₂의 자기특성을 고려한 자기장 이용 결정방향 제어 연구를 통해, LiNi_0.6Mn_0.2Co_0.2O₂ 결정 내 많은 비율의 (00l) plane들이 전극집전체 표면에 수직으로 정렬된 결정배향 전극을 확보하였다. 해당 결정배향 전극은 리튬이차전지의 충방전 과정 중에 낮은 전극 polarization 특성을 나타내었으며, 일반 LiNi_0.6Mn_0.2Co_0.2O₂ 전극 대비 높은 용량을 기록하였다. 결정 배향 전극은 빠른 리튬이온 전달에 적합한 구조적 특성으로 인해 리튬이차전지 성능 향상에 기여한 것으로 예상되었다. 결정배향 전극에 의한 성능 향상을 다양한 전기화학적 이론 및 분석 결과를 통해 검증, 해석하였다.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.622-625
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• 2022

YBa₂Cu₃O_7-y bulk as a high temperature oxide superconducting conductor has the high critical temperature of 92 K. YBa₂Cu₃O_7-y bulk superconductors have been fabricated by a seeded melting growth. Magnetic properties were studied by using superconductor of melted YBa₂Cu₃O_7-y oxides. It was demonstrated that Y₂BaCuO₅ particles acts as a pinning center which plays an important role on the magnetic properties. The thickness of the upper and lower pellets of the YBa₂Cu₃O_7-y bulk was formed at 40 mm with 55 g of the composition, and the YBa₂Cu₃O_7-y superconductor was manufactured through a heat treatment process. Manufacturing the superconducting bulk, it is possible to improve the pore density of the superconducting bulk by providing a path through which oxygen could be emitted.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.664-670
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• 2002

The electrical characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3$(ZPCCY)-based varistors were investigated with $Y_2O_3$ content in the range of 0.0~4.0 mol%. As $Y_2O_3$ content is increased, the average grain size was markedly decreased in the range of 18.6~3.2 $\mu m$ and the density of the ceramic was decreased in the range of 5.53 ~3.74 $g/\textrm{cm}^3$. While, the varistor voltage was increased in the range of 39.4~748.1 V/mm and the nonlinear exponent was in the range of 4.5~51.2 with increasing $Y_2O_3$ content. The addition of $Y_2O_3$ greatly enhanced the nonlinear properties of varistors, compared with the varistor without $Y_2O_3$. In particular, the varistors with $Y_2O_3$content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 51.2 and the leakage current is 1.3 $\mu A$. The donor concentration and the density of interface states were decreased in the range of (4.19~0.14) $\times$10$^{18}$ /㎤ and (5.38~1.15)${\times}10^{18}/\textrm{cm}^3$, respectively, with increasing $Y_2O_3$ content.

• 광물과 암석
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• 제35권2호
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• pp.141-151
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• 2022

몽골(6종), 미국(1종), 한국(9종)지역에서 채취한 총 16종의 천연 제올라이트를 X-선 회절 분석, X-선 형광 분석, 열 시차, 열 중량 분석 및 양이온 교환능 분석을 통해 특성분석을 수행하였다. 16종의 시료 모두 두 종류 이상의 광물상이 공존하는 혼합광 형태이며, 주로 클라이놉틸로라이트, 휼란다이트, 모데나이트 및 차바자이트와 같은 광물의 조합으로 이루어져 있으며, 일부 시료에서는 운모 점토광물인 일라이트와 석영과 같은 광물이 불순물로 함유되어 있었다. X-선 형광 분석 결과 16종의 천연 제올라이트는 SiO₂, Al₂O₃, K₂O, CaO, Na₂O, MgO 및 Fe₂O₃ 산화물이 함유되어 있었다. 미국 천연 제올라이트인 U-1 시료가 223.3 meq/100 g으로 양이온 교환능이 가장 높게 나타났으며 몽골 천연 제올라이트에서는 M-6 시료가, 한국 천연 제올라이트에서는 K-1 시료가 각각 166.6 meq/100 g으로 가장 높게 나타났다. 열시차 및 열중량 분석 결과 16종의 시료 모두 600℃까지 열적으로 안정성이 우수한 것을 확인 하였다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.39-45
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• 2003

The varistor properties of ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with Sm$_2$O$_3$were investigated in the addition range of 0.0~2.0 mol% Sm$_2$O$_3$at sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. As Sm$_2$O$_3$ content is increased, the breakdown voltage was increased in the range of 348.9~521.8 V/mm for ceramics sintered at 130$0^{\circ}C$ and 8.5~381.3 V/mm for ceramics sintered at 135$0^{\circ}C$. On the whole, the increase of sintering temperature led to the low nonlinearity regardless of Sm$_2$O$_3$content. ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with 1.0 mol% at each sintering temperature exhibited the most superior varistor properties, with the nonlinear exponent of 42.1 at 130$0^{\circ}C$, 36.8 at 135$0^{\circ}C$ and the leakage current of 9.2 $\mu$A at 130$0^{\circ}C$, 11.7 $\mu$A at 135$0^{\circ}C$.EX>.EX>.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.