• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.137-141
• /
• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.04a
• /
• pp.133-133
• /
• 2006

• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.141-144
• /
• 2007

We investigated variation of the photoreflectance(PR) signals for n-GaAs furnace and laser annealed. The samples were annealed by using ArF excimer laser(5 min, $30{\sim}50\;W$) and furnace(5 min $400{\sim}700^{\circ}C$). The PR signals(top point) measured from the ArF excimer laser annealed sample showed 1.42 eV and furnace annealed sample showed 1.43 eV. This result is ArF excimer laser annealed sample was uniform annealed surface and inter state.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.90-94
• /
• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.74-74
• /
• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.53.2-53.2
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 2006.08a
• /
• pp.128-128
• /
• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.3
• /
• pp.183-187
• /
• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.71-72
• /
• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.197-200
• /
• 2001

Novel Enhanced Inductively Coupled Plasma is applied to etch $SiO_2$. Effect of $O_2$ or Ar addition to $C_{4}F_{8}$ gas is monitored by Optical Emission Spectroscopy and Quadrupole Mass Spectrometer. It is fund that Ar or $O_2$ dilution to $C_{4}F_{8}$ increases F emission intensity and decreases $CF_2$ intensity. However, the ac frequency to the Helmholtz coil decreases the F intensity and thus increases $CF_2$/F ratio. By adjusting the ac frequency, the optimum etch rate and PR to $SiO_2$ selectivity can be obtained in E-lCP.