• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.43-43
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1211-1214
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• 2005

One of the important problems in recent AC-PDP technology is high efficiency. In this research, we have been investigated electro-optical characteristics of MgO protective layer after radio frequency(RF) plasma treatment using Ar, $O_2$, and $H_2$ gases. The breakdown voltage order was $O_2$ > Ar > Nontreatment > $H_2$. Also, brightness order was $O_2$ > Ar > Non-treatment > $H_2$. In this experiment, the best result was obtained after $O_2-plasma$ treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.103-103
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• 2010

Dependence of radical and ion densities on Plasma Parameters is theoretically investigated in $Cl_2$/Ar plasma discharges. Firstly, a set of reliable rate coefficients is obtained by direct calculations with cross section data set and by comparing them with previously reported values. Then, some global discharge simulations are performed for ICP(inductively coupled plasma) discharges and the results are compared with experimental results. Finally, the validated data set is used to analyze the dependence of radical and ion densities, which are usually not easy to be measured, on electron density arid temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.230-234
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• 2011

High density plasma etching of ZnO film was performed in $CF_4$/Ar and $SF_6$/Ar inductively coupled plasmas. Maximum etch rates of ~1950 ${\AA}$/min and ~1400 ${\AA}$/min were obtained for $10CF_4$/5Ar and $10SF_6$/5Ar ICP discharges, respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the $10CF_4$/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.206-209
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• 2006

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ without substrate heating in comparison with $2.65\;{\times}\;10{-3}\;{\Omega}{\cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar\;+\;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.159-162
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• 2002

Ferroelectric $YMnO_{3}$ thin films were etched with $Ar/Cl_{2}$ and $CF_{4}/Cl_{2}$ inductivly coupled plasma (ICP). The maximum etch rate of $YMnO_{3}$ thin film was $300{\AA}/min$ at a $Ar/Cl_{2}$ gas mixing ratio of 2/8, a RF power of 800 W, a dc bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of ${30^{\circ}C}$. From the X-ray photoelectron spectroscopy (XPS) analysis ， yttrium not only etched by chemical reactions with Cl radicals, but also assisted by Ar ion bombardments in $Ar/Cl_{2}$ plasma. In $CF_{4}/Cl_{2}$ plasma, yttrium are remained on the etched surface of $YMnO_{3}$ and formed of nonvolatile YFx compounds Manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the $YMnO_{3}$ thin film etched in $Ar/Cl_{2}$ plasma shows lower value than that in $CF_{4}/Cl_{2}$ plasma. It is indicates that the crystallinty of $YMnO_{3}$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.