• Korean Journal of Food Science and Technology
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• v.50 no.3
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• pp.316-323
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• 2018

This study aimed to analyze the effect of packaging gas type on the quality characteristics of dried persimmon during a 60-day storage period. The samples were stored at 10 and $-10^{\circ}C$. Experimental samples were either untreated (CON) or packed with carbon dioxide ($CO_2$), nitrogen ($N_2$), or argon (Ar) gases. In terms of the CIE $a^*$ (redness) and $b^*$ (yellowness) values, the least changes were observed in the Ar package. The color difference observed in the $N_2$ package was found to be the highest at $-10^{\circ}C$. Ar and $CO_2$ packages showed the highest and lowest water content, respectively, at $10^{\circ}C$. Sensory evaluation showed a high score for Ar packages. At $10^{\circ}C$, the score of the Ar package was the highest until day 40 and that of the $CO_2$ package was the highest from day 40 to 60. At $-10^{\circ}C$, the score of the Ar package was the highest. These results show that $N_2$- and Ar-modified packaging is the most desirable, thus suggesting its application in actual market.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1997.10a
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• pp.37-42
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• 1997

This paper describes result of experiment of parameters affecting the micro hole drilling time, kind of assisting gas and it's pressure. The result reveals that parameter value of 0.08J, 20Hz, dwell time of 300 microseconds can be a good machining condition to make micro hole diameter range of 50-70${\mu}{\textrm}{m}$, Assistant gas such air, O2, Ar, N2 was adapted. Assistant gas of air makes heat affected zone enlarge due to burning of material, also it makes hole irregular and damage because of refusion stick to caused by chemical reaction with Al2O3 ceramic material. O2(99.9%) has good characteristic to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$, but it is expensive. Ar, N2 makes material burn and crack severely and proved to be an appropriate but, Ar was better than N2.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.604-608
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• 1997

Reactions of arenealdehyde 2-pyridylhydrazones (1) with thianthrene cation radical ($Th^{+·}$) and tris(2,4-dibromophenyl)aminium hexachloroantimonate ($Ar_3N^{+·}SbCl_6^-$) were investigated. The major product was switched depending on the cation radical being used. That is, s-triazolo[4,3-α]pyridines (2), an intramolecular cyclization product, and 1-(2-pyridyl)-1,2,4-triazoles (3), an intermolecular cycloaddition product, were obtained as a major product when reacted with $Th^{+·}$ and $Ar_3N^{+·}$, respectively in nitrile solvents. The plausible mechanisms are proposed based on both the reduction potentials of $Th^{+·}$ and $Ar_3N^{+·}$ and control experiments.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.211-215
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• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• The Korean Journal of Malacology
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• v.29 no.3
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• pp.171-179
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• 2013

Arginine kinase (ArK) is known to play an important role in most invertebrates the level of ATP by phosphorylation of phosphagens in cell and immuninty in living organisms. ArK has been identified in many kinds of organisms ranging from invertebrate to vertebrate. However, no ArK gene has been cloned and investigated from N. samarangae. This leads us to identify ArK cDNA (NsArK) from the expressed sequence tag (EST) sequencing of N. samarangae. Sequence analysis indicated that the coding region of 1,065 bp contains 355 amino acid residues. Molecular phylogenetic analysis shows that NsArK had very high similarities with mollusca and arthropoda. In an attempt to investigate a potential role of NsArK in the digestive gland of N. samarangae, expression patterns were analyzed. RT-PCR analsysis shows that NsArK mRNA is induced in the rane of 1.2 fold at 6 hr by laminarin when compared with the control. The immunnologial and physiological role of NsArK remains to be further investigated in N. samarangae.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.32-36
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• 2014

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.54-54
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• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• Membrane Journal
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• v.13 no.2
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• pp.73-80
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• 2003

Abstract: The surfaces of poly (methylpentene)(PMP) were modified by Af and $NH_3$ plasma treatment, and their effects on permeation characteristics were investigated. The mole ratio of O/C in the surface was increased with Ar plasma treatment and consequently the surface became hydrophilic because of the possible formation of -OH, -COOH and C=O. The surface treated by $NH_3$ plasma also became hydrophilic due to the formation of amine and/or amide groups. The $CO_2$ permeability and its actual selectivity over N_2$ were 182 baller and 6.17 for the optimum condition of Ar-30W-6min, while 144 Baller and 6.13 for that of $NH_3$-30 W-8 min.

• Journal of Surface Science and Engineering
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• v.32 no.2
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.