• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.98-106
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• 1996

Antireflection (AR) coating has proven effective in providing substantial increase in solar cell efficiency. In this paper, we review the principles of antireflection coating, describe materials and methods of deposition used to provide antireflection coatings on solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.251-254
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• 2001

This paper describes an efficiency improvement of buried contact solar cell (BSCS) with a structure of MgF$_2$/CeO$_2$/Ag/Cu/Ni grid/n$^{+}$ emitter/p-type Si base/p$^{+}$/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating shewed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 ${\mu}{\textrm}{m}$ to 1.1 ${\mu}{\textrm}{m}$. BCSC cell efficiency was improved from 16.2 % without any AR coating to 19.9 % by employing DLAR coatings. Further details on MgF$_2$/CeO$_2$ DLAR coatings on the BCSC cells are presented in this paper.per.

• Journal of Surface Science and Engineering
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• v.55 no.6
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• pp.353-362
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• 2022

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb₂O₅, | SiO₂ structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb₂O₅ 64 nm | SiO₂ 41 nm | sodalime glass | ITO 10 nm | Nb₂O₅ 64 nm | SiO₂ 41 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.149-149
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• 2010

The double-layer antireflection (DLAR) coatings have significant advantages over single-layer antireflection (SLAR) coatings. This is because they will be able to cover a broad range of the solar spectrum which would enhance the overall performance of solar cells. Moreover films deposited at high frequency are expected to show excellent and UV-stable passivation in the refractive index that we adopted. In this work, we present a novel DLAR coating using SiNx:H thin films with refractive indices 1.9 and 2.3 as the top and bottom layers. This approach is cost effective when compared to earlier DLAR coatings with two different materials. SiNx:H films were deposited by Plasma enhanced chemical vapor deposition (PECVD) technique using $SiH_4$, $NH_3$ and $N_2$ gases with flow rates 20~80sccm, 200sccm and 85 sccm respectively. The RF power, plasma frequency and substrate temperature for the deposition were 300W, 13.56 MHz and $450^{\circ}C$, respectively. The optimum thickness and refractive indices values for DLAR coatings were estimated theoretically using Macleod simulation software as 82.24 nm for 1.9 and 68.58 nm for 2.3 respectively. Solar cells were fabricated with SLAR and DLAR coatings of SiNx:H films and compared the cell efficacy. SiNx:H> films deposited at a substrate temperature of $450^{\circ}C$ and that at 300 W power showed best effective minority carrier lifetime around $50.8\;{\mu}s$. Average reflectance values of SLAR coatings with refractive indices 1.9, 2.05 and 2.3 were 10.1%, 9.66% and 9.33% respectively. In contrast, optimized DLAR coating showed a reflectance value as low as 8.98% in the wavelength range 300nm - 1100nm.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.461-466
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• 1999

Diamond-like carbon(DLC) films were directly deposited onto germanium(Ge) witness pieces and lenses by a capacitively coupled 13.56 MHz RF glow discharge plasma with $CH_4$ gas. The characterizations of DLC films were measured using a Raman and FTIR spectrometer. The configuration of Raman and FTIR spectra had a traditional shape. The IR transmittance was measured using an IR spectrophotometer. The maximum values of the IR transmission of Ge with the DLC/Ge/DLC, DLC/Ge/BBAR (broad band antireflection), DLC/Ge, and BBAR/Ge structures are 98%, 93%, 64%, and 63.5%, respectively, which come up to the theoretical values. The uniform DLC films were obtained by a rotation of the cathode at certain conditions.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.5-5
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• 1996

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.259-265
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• 1995

Antireflection coatings on optical lenses commertially available in domestic market are optically analyzed. Transmission spectra and reflection spectra are collected using spectrophotometers. The apparent absorption spectra around the absorption band edge are dominated by the substrate absorption. The reflection spectra and the apparent absorption spectra at visible region between 400nm and 700nm show very strong correlation to each other except a couple samples. The discrepency observed in the latters are due to an increased absorption in visible region by the substrate, which is negative effect of these samples. An antireflection coating consisted of $SiO_2/TiO_2/SiO_2/ZrO_2/Cr$ is made on c-Si substrate for spectroscopic ellispometry analysis. A film-by-film coating is accomplished and between each film deposition, ex-situ spectroscopic ellipsometry measurements are made. The analysis of the spectroscopic ellipsometry data reveals that the average film densities of $ZrO_2$ and $TiO_2$ reach only 80% of their respective packing densities and thick films are inhomogeneous along film growth direction. Discussions are made toward in-situ, real-time monitoring of the film growth so that a real-time feedback is possible to achieve a post-correction to minor deviations occured in the previous step. step.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.24.1-24.1
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• 2010

In practical operation, the exposed surfaces may get dirty thus degrade the performance of devices. So the combination of self cleaning and antireflection is very desirable for use in outdoor photovoltaic and displaying devices, self cleaning windows and car windshields. For the purpose of self cleaning, the surface needs to be either superhydrophobic or superhydrophilic. However, in practice AR in the visible region and self cleaning are a pair of competitive properties. To satisfy the requirements for superhydrophobic or superhydrophilic surfaces, high surface roughness is required. But it usually cause severely light scattering. Photo-responsive coatings (TiO2, ZnO etc.) can lead to superhydrophilic. However, the refractive indices are high. Thus for porous structure, controlling pore size in the underwavelength scale to reduce the light scattering is very crucial for highly transparent and self cleaning antireflection coating. Herein, we demonstrate a simple method to make high performance broadband antireflection layer on the glass surface, by "carving" the surface by hot alkali solution. Etched glass has superhydrophilic surface. By chemical modification, it turns to superhydrophobic. Enhanced transparency (up to 97%) in a broad wavelength range was obtained by short time etching. Also antifogging effect has been demonstrated, which may offer advantage for devices working at high humidity environment or underwater. Compositional dependence of the properties was observed by comparing three different commercially available glasses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.7
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• pp.1850-1860
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• 1996

We present the results for the design ofantireflection (AR) coatings on facets of a multilayered structure waveguide device. The method, whose results agree very well with the reusults of the rigorous method in the case of a symmetric three layer structure deveice, is extended for the design of AR coatings on the facets of a multilayered structure waveguide device. the field profile in a multilayered structure waveguide necessary for the use of the extended method is obtained from the transfer matrix method. The virtual four layered structure method (VFLM) is proposed to reduce the time for the design ofAR coatings because the time for the design of AR coatings using the extended method increases as the number of layers increases. The optimum coating parameters and tolerance mapsfor two different six layered waveguide devices in Ref. [9] and [10] are obtained using the extendedmethod and the VFLM,and for the three different cases approximated as three layered waveguide devices to compare the results of each case. The results of the VFLM are similar to those of the extended methodcompared to those of the three layered structure waveguide. The main reason for the above results is that the field profile in the device calculated usingthe VFLM is similar to that calculated using the extended method compared to that for three layered structure wavegjide. We conclude that the extended method or VFLM should be used for the design of AR coatings on facets of a deice required for the facet reflectivity less than 10$^{-3}$ such as a semiconductor otical amplifier.