• Title/Summary/Keyword: Anode interfaces

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Overview of Interface Engineering for Organic Solar Cells (유기태양전지 계면 기술 동향)

  • Kim, Gi-Hwan
    • Journal of Adhesion and Interface
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    • v.22 no.4
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    • pp.113-117
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    • 2021
  • Among the next-generation solar cells, organic solar cells using organic materials are a key energy production device for the future energy generation devices, and have recently been receiving a lot of attention with rapid growth. To improve the efficiency of organic solar cells, interfacial engineering technology has been widely applied. In particular, it is widely used to improve device efficiency through energy level control by using interface engineering on the anode and cathode, which are positive electrodes, and to ultimately utilize interface engineering for tandem organic solar cells to derive excellent electrical and optical performance to produce high-performance devices. In this article, we will summarize and introduce recent research trends on interfacial engineering used in organic solar cells, and discuss the method of manufacturing high-performance organic solar cells.

Anode and Cathode Traps in High Voltage Stressed Silicon Oxides (고전계 인가 산화막의 애노우드와 캐소우드 트랩)

  • 강창수;김동진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.461-464
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    • 1999
  • This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

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Simplified Resistor Network Calculation for Electrical and Mass Transport in Anode-Supported Planar Solid Oxide Fuel Cell (연료극지지 평판형 고체산화물 연료전지 내에서의 전기 및 물질전달에 대한 간략화된 저항 네트워크 계산)

  • Lee, Hyun-Jae;Nam, Jin-Hyun;Kim, Charn-Jung
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.1740-1745
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    • 2004
  • A simplified resistor network model for electrical and mass transport in anode-supported planar solid oxide fuel cell (SOFC) was constructed in order to investigate the effect of interconnect rib geometry on the cell performance. For accurate potential calculation, activation and concentration over-potentials at the electrode/electrolyte interfaces were fully considered in this calculation. When contact resistance was not considered, the optimum interconnect rib length were calculated to be $0.1{\sim}0.2$ mm for 2 mm half unit cell for given operation conditions and properties. However, with realistic contact resistance, the interconnect rib length should be increased to provide larger contact area and thus to obtain better performance.

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Interfacial Stability Between Anode and Electrolyte of LSGM-Based SOFCs (LSGM계 고체산화물 연료전지의 전해질-음극 사이의 계면안정성)

  • Kim, Kwang-Nyeon;Moon, Jooho;Son, Ji-Won;Kim, Joosun;Lee, Hae-Weon;Lee, Jong-Ho;Kim, Byung-Kook
    • Journal of the Korean Ceramic Society
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    • v.42 no.7 s.278
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    • pp.509-515
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    • 2005
  • Interfacial reactions at LSGM electrolyte and NiO-GDC anode interfaces were thoroughly investigated with Environmental Scanning Electron Microscopy (ESEM-PHlLIPS XL-30) and Energy Dispersive X-ray (EDX-Link XL30). According to the analysis, serious reaction zone was observed at LSGM/NiO-GDC interface. It was found that the reaction layer was originated from the chemical reaction between NiO and LSGM. The reaction products were identified as La deficient form of LSGM based perovskite and Ni-La-O compounds such as LaSrGa$_{3}$O$_{7}$ and LaNiO$_{3}$ from the X-Ray Diffraction (XRD, Philips) analysis. According to the electrical characterization, interfacial layer was very electrically resistive which would be the cause of high internal resistance and low power generating characteristic of the unit cell.

Interfacial Electronic Structures for Electron and Hole Injection in Organic Devices: Nanometer Layers of CsN3 and 1,4,5,8,-naphthalene-tetracarboxylic-dianhydride (NTCDA)

  • Yi, Yeon-Jin;Jeon, Pyeongeu;Lee, Jai-Hyun;Jeong, Kwang-Ho;Kim, Jeong-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.90-90
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    • 2012
  • The electron/hole injections in organic electronic devices have long been an issue due to the large energy level mismatches between electrode and organic layer. To utilize the organic materials in electronic devices, functional thin layers have been used, which reduce the electron/hole injection barrier from electrode to organic material. Typically, inorganic compounds and organic molecules are used as an electron and hole injection layer, respectively. Recently, CsN3 and 1,4,5,8,- naphthalene-tetracarboxylic-dianhydride (NTCDA) are reported as a potential electron and hole injection layers. CsN3 shows unique properties that it breaks into Cs and N and thus Cs can dope organic layer into n-type. On the other side, hole injection anode, NTCDA forms gap states with anode material. In this presentation, we show the electronic structure changes upon the insertion of CsN3 and NTCDA at proper interfaces to reduce the charge injection barriers. These barrier reductions are correlated with device characteristics.

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Sputtered ZTO as a blocking layer at conducting glass and $TiO_2$ Interfaces in Dye-Sensitized Solar Cells (GZO/ZTO 투명전극을 이용한 DSSC의 광전 변환 효율 특성)

  • Park, Jaeho;Lee, Kyungju;Song, Sangwoo;Jo, Seulki;Moon, Byungmoo
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.53.2-53.2
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    • 2011
  • Dye-sensitized solar cells(DSSCs) have been recognized as an alternative to the conventional p-n junction solar cells because of their simple fabrication process, low production cost, and transparency. A typical DSSC consists of a transparent conductive oxide (TCO) electrode, a dye-sensitized oxide semiconductor nanoparticle layer, liquid redox electrolyte, and a Pt-counter electrode. In dye-sensitized solar cells, charge recombination processes at interfaces between coducting glass, $TiO_2$, dye, and electrolyte play an important role in limiting the photon-to-electron conversion efficiency. A layer of ZTO thin film less than ~200nm in thickness, as a blocking layer, was deposited by DC magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells(DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/I_3^-$). The presented DSCs were fabricated with working electrode of Ga-doped ZnO glass coated with blocking ZTO layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited GZO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells.

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The Study of Reliability by SILC Characteristics in Silicon Oxides (SILC 특성에 의한 실리콘 산화막의 신뢰성 연구)

  • 강창수
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.17-20
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    • 2002
  • This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

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Silyl-group functionalized organic additive for high voltage Ni-rich cathode material

  • Jang, Seol Heui;Jung, Kwangeun;Yim, Taeeun
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1345-1351
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    • 2018
  • To allow stable cycling of layered nickel-rich cathode material at high voltage, silyl-functionalized dimethoxydimethylsilane is proposed as a multi-functional additive. In contrast to typical functional additive, dimethoxydimethylsilane does not make artificial cathode-electrolyte interfaces by electrochemical oxidation because it is quite stable under anodic polarization. We find that dimethoxydimethylsilane mainly focuses on scavenging nucleophilic fluoride species that can be produced by electrolyte decomposition during cycling, leading to improving interfacial stability of both nickel-rich cathode and graphite anode. As a result, the cell cycled with dimethoxydimethylsilane-controlled electrolyte exhibits 65.7% of retention after 100 cycle, which is identified by systematic spectroscopic analyses for the cycled cell.

Review of interface engineering for high-performance all-solid-state batteries (계면 제어를 기반으로 한 고성능 전고체 전지 연구)

  • Insu, Hwang;Hyeon Jeong, Lee
    • Journal of Industrial Technology
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    • v.42 no.1
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    • pp.19-27
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    • 2022
  • This review will discuss the effort to understand the interfacial reactions at the anode and cathode sides of all-solid-state batteries. Antiperovskite solid electrolytes have received increasing attention due to their low melting points and anion tunability which allow controlling microstructure and crystallographic structures of this material system. Antiperovskite solid electrolytes pave the way for the understanding relationship between critical current density and mechanical properties of solid electrolytes. Microstructure engineering of cathode materials has been introduced to mitigate the volume change of cathode materials in solid-state batteries. The hollow microstructure coupled with a robust outer oxide layer effectively mitigates both volume change and stress level of cathode materials induced by lithium insertion and extraction, thus improving the structural stability of the cathode and outer oxide layer, which results in stable cycling performance of all-solid-state batteries.

Challenges and Improvements of All-Solid-State Batteries

  • Jihyun Jang
    • Journal of the Korean Chemical Society
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    • v.67 no.3
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    • pp.165-174
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    • 2023
  • The development of all-solid-state batteries (ASSBs) has been gaining attention in recent years due to their potential to offer higher energy densities, improved safety, and longer cycle life compared to conventional lithium-ion batteries. However, several challenges must be addressed to achieve the practical application of ASSBs, such as the development of high-performance solid-state electrolytes, stable electrode-electrolyte interfaces, and cost-effective manufacturing processes. In this review paper, we present an overview of the current state of ASSB research, including recent progress in solid-state electrolyte and cathode/anode materials, and cell architecture. We also summarize the recent advancements and highlight the remaining challenges in ASSB research, with an outlook on the future of this promising technology.