• 한국지구물리탐사학회:학술대회논문집
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• 2003.11a
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• pp.78-82
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• 2003

In this paper, simulated annealing technique was used to estimate the rock joint characteristics, RMR(rock mass rating) values, to overcome the defects of ordinary kriging. Ordinary kriging reduced the variance of data, so lost the characteristics of distribution. Simulated annealing technique could reflect the distribution feature and the spatial correlation of the original data. Through the comparisons between three times simulations, the uncertainty of the simulation could be quantified, and sufficient results were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.776-779
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.318-322
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• 2009

In this paper, to establish growth technology of ZnO:Al thin films at low temperature applied to photoelectronic devices, ZnO:Al were prepared by RF magnetron sputtering on glass substrate at room temperature using different RF power with subsequent annealing process at different temperature in $H_2$ ambient. The resistivity of hydrogen-annealed ZnO:Al thin film at temperature of $300^{\circ}C$ was reduced to $8.32{\times}10^{-4}{\Omega}cm$ from $9.44{\times}10^{-4}{\Omega}cm$ which was optimal value for as-grown films. X-ray photoelectron spectroscopy(XPS) revealed that improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing process.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.170-170
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• 1999

We studied Nb growth mode on Cu(100) surface by scanning tunneling microscopy (STM) at room temperature. Nb/Cu is immiscible at room temperature and thus is an ideal system for studying surface alloy formation. Initially deposited Nb atoms are incorporated subsurface on Cu(100). After annealing, they are preferentially found at step edges and appear as bright dots surrounded by dark rings. Ordering emerges from step edges as annealed. Ordered ({{{{ SQRT { 5} }$\times${{{{ SQRT { 5} }}}})R 26.6$^{\circ}$phase Nb structure is formed at $\theta$<0.2ML after annealing to 50$0^{\circ}C$. At higher coverage, $\theta$>0.25, annealing leads to p(2$\times$2) phase. due to large mismatch in lattice parameters, the domain is limited to a few tens of nm2. Growth kinetics of the system will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.195.2-195.2
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• 2014

Nanodiamond (ND) is composed of inner diamond core and outer graphite shell. The size of ND used in this study was about 5 nm. The ND solution was dropped on silicon substrate and dried in air. Dried ND sample was purified by using annealing method in air. Then, 40 keV Fe ion was irradiated into the sample. The dose was varied from $1{\times}10^{14}$ to $1{\times}10^{16}ions/cm^2$. The post annealing was performed at 1073 K in the vacuum to recover diamond structure. The annealing at 873 K in air was performed to remove the outer graphite shell. The structure of ND was confirmed by X-ray diffraction (XRD) and Raman spectroscopy. We will present the detailed data and results in the conference.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.109-113
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• 2004

Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and $Zn_3P_2$ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as $1\times10^{19}\textrm{cm}^{-3}$ can be achieved. When the Zn diffusion was carried at $550^{\circ}C$ and 5-20 min., the diffusion depth of hole concentration moves from 1.51$\mu\textrm{m}$ to 3.23 $\mu\textrm{m}$, and the diffusion coeffcient of Zn is $5.4\times10^{-11}\textrm{cm}^2$/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 $\mu\textrm{m}$ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional When the thickness of $SiO_2$ thin film is above 1,000$\AA$, the hole concentration becomes stable distribution.

• Journal of Welding and Joining
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• v.17 no.1
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• pp.133-144
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• 1999

To fine seam annealer capacity of through thickness seam annealing in terms of through thickness microstructure change with increased toughness and elongation leaving heat trace on it, high strength steel pipes of ERW with different thickness were tested in different seam annealing temperature measured on the outer surface of pipes. Annealing temperature and microstructure of the weld seam were changed through applied seam annealing condition. Toughness and tensile test with hardness and microstructure analysis were done on the annealed weld seam to fine its characteristics as a primary step and annealing characteristics according to different seam annealing condition. Through a study of annealed ERW weld seam characteristics and seam annealing technology, amount of electric power should apply in decreased manner to arranged inductors of annealer in the order of 1st, 2nd, 3rd, so on for proper seam annealing. For example of 15.4mm thick and 610mm outside diameter pipe, applied power for proper seam annealing is 600 -650kw at 1st inductor, 450 - 500kw at 2nd inductor, 200-250 kw at 3rd inductor of annealer during 10 - 12M/minute moving speed of pipe. Also, the penetration depth of heat trace along the thickness direction of weld during seam annealing can be estimated through the equation 17mm/kv$\times$voltage(kv) with the microstructure and hardness analysis of thick weld seam as well as study of seam annealing and comparison of cooling condition to CCT diagram of low carbon high strength steel. From this result, the difference between the technological applicability of full annealing condition based on phase diagram and full penetration of heat trace based on CCT diagram along the thickness of weld seam is discussed.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.252-256
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• 2005

We removed the bluish of the natural ruby successfully by vacuum annealing, and measured the color evolution with annealing time and temperature. We varied the anneal temperature and time $800\~1500^{\circ}C$ and $3\~26$ hrs, respectively. The color evolution of rubies with annealing condition was recorded by a digital camera and a color coordination visible spectrometer. We determined the optimum bluish eliminating annealing condition was $1500^{\circ}C-3hr$, which conserving the natural inclusions. We suggest the bluish shrink with diffusion coefficient of $D=(5\times10^{-3}){\exp}(-200.000/RT)[cm^2/s]$. We propose the color of ruby may be determined as the identical red color if the color difference between two samples are less than 1.0, and the color difference nay be an auxiliary standard to evaluate the color of rubies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.77-81
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and $2.13{\times}10^{-9}[A/cm^2]$ respectively.