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Analysis of Electrical Property of Room Temperature-grown ZnO:Al Thin films Annealed in Hydrogen Ambient

수소 분위기에서 후열처리한 상온증착 ZnO:Al 박막의 전기적 특성 분석

  • 정윤환 (원광대학교 전기전자및정보공학부, WRISS) ;
  • 진호 (원광대학교 전기전자및정보공학부, WRISS) ;
  • 김호걸 (원광대학교 전기전자및정보공학부, WRISS) ;
  • 박춘배 (원광대학교 전기전자및정보공학부, WRISS)
  • Published : 2009.04.01

Abstract

In this paper, to establish growth technology of ZnO:Al thin films at low temperature applied to photoelectronic devices, ZnO:Al were prepared by RF magnetron sputtering on glass substrate at room temperature using different RF power with subsequent annealing process at different temperature in $H_2$ ambient. The resistivity of hydrogen-annealed ZnO:Al thin film at temperature of $300^{\circ}C$ was reduced to $8.32{\times}10^{-4}{\Omega}cm$ from $9.44{\times}10^{-4}{\Omega}cm$ which was optimal value for as-grown films. X-ray photoelectron spectroscopy(XPS) revealed that improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing process.

Keywords

References

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