• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.152-155
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• 1996

Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.50 no.1
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• pp.28-37
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• 2001

This paper presents an efficient algorithm for the loss minimization of distribution system by automatic sectionalizing switch operation in large scale distribution systems. Simulated annealing is particularly well suited for large combinational optimization problem, but the use of this algorithm is also responsible for an excessive computation time requirement. Tabu search attempts to determine a better solution in the manner of a greatest-descent algorithm, but it can not give any guarantee for the convergence property. The hybrid algorithm of two methods with two tabu lists and the proposed perturbation mechanism is applied to improve the computation time and convergence property Numerical examples demonstrate the validity and effectiveness of the proposed methodology using a KEPCO's distribution system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.34-38
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• 1992

Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO$_2$films formed by Plasma-enhanced chemical vapor deposition (PECVD) have been studied. PECVD SiO$_2$films were formed with substrate temperature, and annealing time and temperature of RTP changed, and its'characteristics were obsreved by C-V measurement. We found that the quality of SiO$_2$films formed by PECVD depended on annealing time rather than substrate temperature.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.552-557
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• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.859-865
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• 2004

LaNiO$_3$(LNO) thin films on (100) Si substrates are prepared by sol-gel method on heat treatment conditions, such as heat transfer direction, pyrolysis and annealing process, and annealing temperatures and times. The effect of heat treatment conditions on the (100) orientations, structures and resistances of the thin films are investigated by XRD, SEM(FESEM), and a lout probe method. Highly (100) orientation factor(0.97), a pseudocubic crystalline structure with a dense and uniform microstructure could be formed by the following conditions： 1) the heat transfer direction is from Si substrate to LNO, 2) the pyrolysis and annealing process are alternated, 3) the annealing temperature is $650^{\circ}C$ and 4) the annealing times is 3 minutes. The sheet resistance of thin films decreased with increasing of a annealing temperature and time, and a number of coating.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.426-429
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• 2003

In this study, phase transformation characteristics of Nitinol shape memory alloy with 54.5wt%Ni-45.5wt%Ti were investigated by varying with annealing treatment and cutting conditions through DSC(differential scanning calorimetry). Annealing treatment conditions were considered as heat treated time of 5 min, 15 min, 30 min, and 45 min, heat treated temperature of 40$0^{\circ}C$, 50$0^{\circ}C$, 5$25^{\circ}C$, 55$0^{\circ}C$, 575$^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$, and environmental condition of heat treatment under vacuum or air. Cutting conditions were considered as no cutting, one side cutting, and two side cutting. Tensile test was also conducted on Nitinol shape memory alloy to investigate thermomechanical characteristics by varying with annealing heat treatment histories. According to the results, annealing treatment and cutting conditions were found to significantly affect on phase transformation and thermomechanical characteristics of Nitinol shape memory alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.209-214
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• 2023

The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4H-SiC was investigated. Au/SiC Schottky diodes were manufactured using a 4H-SiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 × 10¹⁷ and 2.7 × 10¹⁷ neutrons/cm²) and annealing times (up to 2 h at 1700 ℃). Capacity-voltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4H-SiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 ℃ annealing; the decrease was faster when the defect level was shallow.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.5
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• pp.1183-1192
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• 1993

Since the punching time is strongly related to the productivity in sheet metal stamping, there have been a lot of efforts to obtain the optimal tool path. However, most of the conventional efforts have the basic limitations to provide the global optimal solution because of the inherent difficulties of the NP hard combinatorial optimization problem. The existing methods search the optimal tool path with limiting tool changes to the minimal number, which proves not to be a global optimal solution. In this work, the turret rotation time is also considered in addition to the bed translation time of the NCT machine, and the total punching time is minimized by the simulated annealing algorithm. Some manufacturing constraints in punching sequences such as punching priority constraint and punching accuracy constraint are incorporated automatically in optimization, while several user-interactions to edit the final tool path are usually required in commercial systems.

• Polymer(Korea)
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• v.24 no.6
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• pp.794-801
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• 2000

The effect of chain length and packing density of intercalated surfactants, annealing temperature, and annealing time on static melt intercalation of thermoplastic polymers was examined using x-ray and FTIR spectroscopy. Although melt intercalation of polymers was not successful when alkyl chains in organosilicates form a lateral monolayer structure, the type and structure of surfactants could not much affect final interlayer distances of most polymer/silicate hybrids. As annealing time increases, interlayer distance in organosilicates increases while the dispersity of the spacing between silicate layers decreases. However, the dispersity of interlayer spacing as well as interlayer distance in organosilicates increase with annealing temperature.