• Journal of the Korean Vacuum Society
• /
• v.13 no.3
• /
• pp.103-108
• /
• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.4
• /
• pp.665-670
• /
• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.43-48
• /
• 2017

Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.329-329
• /
• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.432-433
• /
• 2012

Polymer solar cells are fabricated using electrospray (e-spray) deposition process. It shows comparable performance with reference devices, and has different characteristics according to the thickness of the active layer: In the case of the devices with higher fill factor, it shows relatively lower current density, and vice versa. These films are characterized by atomic force microscopy measurement. The results indicate that the comparable power conversion efficiency made by e-spray results from the 'solvent annealing effect' by process conditions and the different thin film property is caused by the degree of self-organization of the polymer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.1
• /
• pp.21-24
• /
• 2020

We investigated a solution-driven Yttrium Tin Oxide (YSnO) film that was imprinted using a parallel nanostructure as a liquid crystal (LC) alignment layer. The imprinting process was conducted at the annealing temperature of 100℃. To evaluate the effect of this process, we conducted surface analyses including atomic force microscopy (AFM). During imprinting, the surface roughness was reduced, and anisotropic characteristics were observed. Planar LC alignment was observed at a pretilt angle of 0.22° on YSnO film. Surface anisotropy induced by imprinting method forces LC to align along the direction of the parallel nanostructure, which is an alternative to conventional polyimide treated using a rubbing process.

• Journal of Surface Science and Engineering
• /
• v.28 no.2
• /
• pp.67-76
• /
• 1995

The microstructure of 95wt.%Pb/5wt.%Sn and 63wt.%Sn/37wt.%Pb solders for flip chip bonding process has been characterized. Solders were deposited by thermal evaporation and reflowed in the conventional furnace or by rapid thermal annealing(RTA) process. As-deposited films show columnar structure. The microstructure of furnace cooled 63Sn/37Pb solder shows typical lamellar form, but that of RTA treated solder has the structure showing an uniform dispersion of Pb-rich phase in Sn matrix. The grain size of 95Pb/5Sn solder reflowed in the furnace is about $5\mu\textrm{m}$, but the grain size of RTA treated solder is too small to be observed. The microstructure in 63Sn/37Pb solder bump shows the segregation of Pb phase in the Sn rich matrix regardless of reflowing method. The 63Sn/37Pb solder bump formed by RTA process shows more uniform microstructure. These result are related to the heat dissipation in the solder bump.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.10
• /
• pp.1752-1758
• /
• 2008

This paper deals with the reduction of friction torque in permanent magnet motors by using the heat treatment of stator core. The stator core is made of electrical steel sheared by the punching die. From the punching process, large mechanical stress acting on the edge of stator tooth induces significant plastic and elastic deformation and then cause the change of magnetization properties. Then, the mechanical and magnetic unbalance in the sheared region of stator tooth produced by material cutting has influence on the friction torque. This paper investigated the effect of the punching process on the magnetization process and the mechanical deformation, and then proposed the stress relief annealing method for the reduction of friction torque among one of motor characteristics.

• Transactions of Materials Processing
• /
• v.14 no.7 s.79
• /
• pp.613-618
• /
• 2005

The paper is concerned with the process design and the die design for manufacturing the preform of a large pressure vessel. The cold-working processes are introduced to improve the fatigue strength and to simplify the manufacturing process. By the finite element simulation, the parameter design is carried out, which is subjected to constraints such as the blank sire, press capacity and other minor limitations. The proposed design results are verified by the model experiments, in which the model is scaled down to one tenth of the original size.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.45-48
• /
• 2006

Effectiveness and its possibility of ELA (Excimer Laser Annealing) for advanced Si TFT system on insulator are described. Currently, extensive study is carried out to realize an advanced SoG (System on Glass) based on LTPS (Low Temperature Poly-Si) technique. By reducing further the process temperature and by improving the fabrication process of LTPS, addressing TFT circuits for FPD (Flat Panel Display) can be mounted onto a flexible plastic as well as onto a glass substrate. Functional devices on the insulating panels are developed to be formed by using ELA. Although technical issues are remained for the fabrication process, Si transistors including 3D TFT structure formed by ELA is expected as a functional Si system on insulator in the ubiquitous IT era.