References
- M. Batzill, and U. Diebold, "The Surface and Materials Science of Tin Oxide", Prog. Surf. Sci., 79, 47 (2005). https://doi.org/10.1016/j.progsurf.2005.09.002
-
J. Um, and S. E. Kim, "Homo-Junction pn Diode Using p-Type SnO and n-Type
$SnO_2$ Thin Films", ECS Solid State Letters, 3(8), 94 (2014). https://doi.org/10.1149/2.0051408ssl - B. G. Lewis, and D.C. Paine, "Applications and Processing of Transparent Conducting Oxides", MRS Bulletin, 25(8), 22 (2000).
-
J. Kim, B. Kim, S. Choi, J. Park, and J. Park, "
$SnO_2$ Semiconducting Nanowires Network and Its$NO_2$ Gas Sensor Application (in Korean)", Kor. J. Mater. Res., 20(4), 223 (2010). https://doi.org/10.3740/MRSK.2010.20.4.223 -
S. E. Kim, and M. Oliver, "Structural, Electrical, and Optical Properties of Reactively Sputtered
$SnO_2$ Thin Films", Met. Mater. Int., 16(3), 441 (2010). https://doi.org/10.1007/s12540-010-0614-6 - W. Guo, L. Fu,Y. Zhang, K. Zhang, L. Y. Liang, Z. M. Liu, and H. T. Cao, "Microstructure, Optical, and Electrical Properties of p-type SnO Thin Films", Appl. Phys. Lett., 96, 042113 (2010). https://doi.org/10.1063/1.3277153
- J. L. Huang, Y. Pan, J. Y. Chang, and B. S. Yau, "Annealing Effects on Properties of Antimony Tin Oxide Thin Films Deposited by RF Reactive Magnetron", Surf. Coat. Tech., 184, 188 (2004). https://doi.org/10.1016/j.surfcoat.2003.11.004
- V. V. Kissine, S. A. Voroshilov, and V. V. Sysoev, "Oxygen Flow Effect on Gas Sensitivity Properties of Tin Oxide Film Prepared by R.F. Sputtering", Sens. Actuat. B, 55, 55 (1999). https://doi.org/10.1016/S0925-4005(99)00022-2
- I. H. Kim, J. H. Ko, D. Kim, K. S. Lee, T. S. Lee, J. Jeong, B. Cheong, Y. J. Baik, and W. M. Kim, "Scattering Mechanism of Transparent Conducting Tin Oxide Films Prepared by Magnetron Sputtering", Thin Solid Films, 515, 2475 (2006). https://doi.org/10.1016/j.tsf.2006.07.020
- E. Cetinorgua, S. Goldsmith, Y. Rosenberg, and R. L. Boxman, "Influence of Annealing on the Physical Properties of Filtered Vacuum Arc Deposited Tin Oxide Thin Films", J. Non-Crystalline Solids, 353, 2595 (2007). https://doi.org/10.1016/j.jnoncrysol.2007.04.031
- S. Kim, Y. Kim, S. Kim, and S. E. Kim, "The Effect of Vacuum Annealing of Tin Oxide Thin Films Obtained by RF Sputtering", J. Kor. Ceram. Soc., 48(4), 316 (2011). https://doi.org/10.4191/KCERS.2011.48.4.316
- Z. R. Dai, Z. W. Pan, and Z. L. Wang, "Growth and Structure Evolution of Novel Tin Oxide Diskettes", J. Am. Chem. Soc., 124, 8673 (2002). https://doi.org/10.1021/ja026262d
- C. Y. Koo, K. J. Kim, K. H. Kim, and H. Y. Lee, "Room Temperature Deposition and Heat Treatment Behavior of ATO Thin Films by Ion Beam Sputtering (in Korean)", J. Kor. Ceram. Soc., 37(11), 1025 (2000).
- Y. Kim, J. Um, S. Kim, and S. E. Kim, "P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering", ECS Solid State Letters, 1(2), 29 (2012).
-
E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. H. Ko Park, C. S. Hwang, and R. Martins, "Transparent p-type
$SnO_X$ thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing", Appl. Phys. Lett, 97, 052105 (2010). https://doi.org/10.1063/1.3469939 - A. Togo, F. Oba, and I. Tanaka, "First-principles calculations of native defects in tin monoxide," Physical Review B, 74, 195128-1 (2006). https://doi.org/10.1103/PhysRevB.74.195128
- Y. H. You, S. M. Bae, Y. H. Kim, and J. H. Hwang, "Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering", J. Microelectron. Packag. Soc., 20(1), 27 (2013). https://doi.org/10.6117/kmeps.2013.20.1.027
- C. Kim, S. Kim, and S. E. Kim, "Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target", Korean J. Mater. Res., 26(4), 222 (2016). https://doi.org/10.3740/MRSK.2016.26.4.222
-
H. Luo, L. Y. Liang, H. T. Cao, Z. M. Liu, and F. Zhuge, "Structural, Chemical, Optical, and Electrical Evolution of
$SnO_X$ Films Deposited by Reactive rf Magnetron Sputtering", ACS Appl. Mater. Interfaces, 4, 5673 (2012). https://doi.org/10.1021/am301601s - Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, "p -channel thin-film transistor using p -type oxide semiconductor, SnO", Appl. Phys. Lett., 93, 032113 (2008). https://doi.org/10.1063/1.2964197
- K. Nomura, T. Kamiya, and H. Hosono, "Ambipolar Oxide Thin-Film Transistor", Adv. Mater., 23, 3431 (2011). https://doi.org/10.1002/adma.201101410
- C. V. Thompson, "Grain Growth in Polycrystalline Thin Films of Semiconductors", Inter. Sci., 6, 85 (1998).
- C. Suryanaraynara, and M. G. Norton, "X-ray diffraction - A Practical Approach", p.212, Plenum Press, New York, (1998).
- J. Szuber, G. Czempik, R. Larciprete, D. Koziej, and B. Adamowicz, "XPS study of the L-CVD deposited SnO thin films exposed to oxygen and hydrogen", Thin Solid Films, 391, 198 (2001). https://doi.org/10.1016/S0040-6090(01)00982-8
- G. Kim, S. G. Ansari, H. Seo, Y. Kim, and H. Shin, "Effect of annealing temperature on structural and bonded states of titanate nanotube films", J. Appl. Phys. 101, 024314 (2007). https://doi.org/10.1063/1.2427094
- E. Burstein, "Anomalous Optical Absorption Limit in InSb", Phys. Rev., 93(3), 632 (1954). https://doi.org/10.1103/PhysRev.93.632