• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Journal of Korean Institute of Industrial Engineers
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• v.24 no.1
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• pp.145-156
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• 1998

In a classical clustering problem, grouping is done on the basis of similarities or distances (dissimilarities) among the elements. Therefore, the objective is to minimize the variance within each group while maximizing the between-group variance among all groups. In this paper, however, a new class of clustering problem is introduced. We call this a laydown grouping problem (LGP). In LGP, the objective is to minimize both the within-group and between-group variances. Furthermore, the problem is expanded to a multi-dimensional case where the two-way minimization process must be considered for each dimension simultaneously for all measurement characteristics. At first, the problem is assessed by analyzing its variance structures and their complexities by conjecturing that LGP is NP-complete. Then, the simulated annealing (SA) algorithm is applied and the results are compared against that from others.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.362-367
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• 2005

ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest Ultraviolet light emission peak at 18 K and 300 K among the films in this study. The annealing process increases the visible light emission, which is due to the increased oxygen vacancies.

• 한국연소학회:학술대회논문집
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• 2001.06a
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• pp.46-52
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• 2001

In this study, the generation of oxygen-free gas using catalytic combustion for industrial applications is explained ; heat treatment and copper annealing. For the experiment, Pd catalysts were determined by testing their catalytic activities over LPG in a micro-reactor. Combustion characteristics for the generation of oxygen-free atmospheric gas and the effect of flue gas upon surface oxidation were estimated form this experiment. As a result of the experimental investigation, we can state that the catalytic combustion could generate oxygen-free atmospheric gas suitable for industrial applications, but vapor produced by combustion process must be carefully considered as a new factor of surface oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Journal of Surface Science and Engineering
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• v.34 no.3
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.802-806
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• 2004

Skutterudite $CoSb_3$ powders were produced by mechanical alloying (MA) of elemental powders using a nominal stoichiometric composition. Annealing of MA powders under specific condition led to a complete phase transformation to a semiconducting ${\delta}-CoSb_3$. Single phase $CoSb_3$ was successfully produced by vacuum hot pressing using MA powders without subsequent annealing. Phase transformations during mechanical alloying and hot pressing were systematically investigated using XRD and SEM. Thermoelectric properties as a function of temperature were evaluated for the hot pressed specimens and compared with results of analogous studies.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.145-148
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• 2001

Bi-2223/Ag HTS tapes fabricated by PIT process are used to make the power transmission cable, motor, fault current limiter, transformer etc. But some problems are still remained as like bubbling, sausaging to got the high Jc. In this study. we carried out the experiment to prevent bubbling in the HTS tape. The bubbling mainly occurred when HTS tape was heat-treating. Therefore, additional vacuum annealing at 400 ~ $600^{\circ}C$and slowly ramp-up sintering method were used to decrease the bubbling. slowly ramp-up sintering was more effective to decrease the bubbling than the vacuum annealing, but Jc was also decreased after heat treatment. Optimum ramp-up sintering schedule was searched to get the high critical current and prevent bubbling at same time.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1469-1472
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• 2006

We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.