• Composites Research
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• v.37 no.3
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• pp.170-178
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• 2024

This study proposes a hybrid composite where a thin copper film (Cu film) is embedded in carbon fiber reinforced plastic (CFRP), and quantum annealing is applied to derive the combination of Cu film placement that maximizes the through-thickness thermal conductivity. The correlation between each ply of CFRP and the Cu film is analyzed through finite element analysis, and based on the results, a combination optimization problem is formulated. A formalization process is conducted to embed the defined problem into quantum annealing, resulting in the formulation of objective functions and constraints regarding the quantity of Cu films that can be inserted into each ply of CFRP. The formulated equations are programmed using Ocean SDK (Software Development Kit) and Leap to be embedded into D-Wave quantum annealer. Through the quantum annealing process, the optimal arrangement of Cu films that satisfies the maximum through-thickness thermal conductivity is determined. The resulting arrangements exhibit simpler patterns as the quantity of insertable Cu films decreases, while more intricate arrangements are observed as the quantity increases. The optimal combinations generated according to the quantity of Cu film placement illustrate the inherent thermal conductivity pathways in the thickness direction, indicating that the transverse placement freedom of the Cu film can significantly affect the results of through-thickness thermal conductivity.

• International Journal of Precision Engineering and Manufacturing
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• v.2 no.2
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• pp.57-64
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• 2001

In recent years, the concern of designing multi-stage gear drives ha increased with more application of them in high-speed and high-load. Until now, however, the researches on the design of gear drives have been focused on single gear pairs. Thus the design practice for multi-stage gear drives has been depended on experiences and expertise of designers and carried out commonly by trial and error. We propose an automation algorithm for the design of two-and three-strage cylindrical gear drives. The two types of dimensional design processes have been proposed to determine gear dimensions in a formal way. The first design process(Process I) uses to total volume of gears to determine gear ration , and uses K factor , unit load and aspect ration to determine gear dimensions, The second one(Process II) makes use of Niemann's formula and center distance to calculate gear ratio and gear dimensions. Process I and Process II employ material date from AGMA and ISO standards, respectively. The configuration design determines the positions of gears with minimizing the volume of gearbox by using a simulated annealing algorithm. The availability of the design algorithm is validated by the design examples to two-and three=stage gear drives.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.3 s.345
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• pp.9-14
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• 2006

The dependence of NBTI lifetime on the BEOL processes such as sintering gas type and passivation layer has been characterized in depth. Then, optimized BEOL process scheme is proposed to improve NBTI lifetime. NBTI showed degradation due to the plasma enhanced nitride (PE-SiN) passivation film and $H_2$ sintering anneal. Then, new process scheme of $N_2$ annealing instead of $H_2$ annealing prior to PE-SiN deposition is proposed. The proposed BEOL process flow showed that NBTI lifetime can be improved a lot without degradation of device performance and NMOS hot carrier reliability.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.204-208
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• 2018

Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.

• Progress in Superconductivity
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• v.6 no.2
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• pp.118-123
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• 2005

A low cost YBCO oxide powder was employed as a starting precursor for MOD process. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process because that YBCO oxide precursor is cheap and easy to control molar ratio. YBCO thin films were prepared by this oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at below $780^{\circ}C$ shows no transport $I_c$ and poor microstructure. Raman spectroscopic study of YBCO thin film indicates that YBCO thin film prepared at below $780^{\circ}C$ contains a number of imperfections such as non-superconducting $BaCuO_2$ phase, cation disorder, etc. However, the YBCO thin film treated at above $800^{\circ}C$ shows improvement in microstructure and current transport properties. This research was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.585-588
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• 2003

Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor powders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. AC magnetization analysis were performed in order to investigate the fraction of Bi-2223 phase in Bi-2223/Ag HTS tape. The cross sections of 55 filaments and 61 filaments were investigated after rolled in order to understand deformation mechanism of superconducting cores. We could achieve best Ic of 70 A class at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process. AC magnetization analysis was useful to investigate the fraction of Bi-2223 phase in the Bi-2223/Ag tape.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.1-46.1
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• 2010

Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Journal of the Korean Society for Heat Treatment
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• v.8 no.3
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• pp.222-228
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• 1995

Mechanical alloying behaviour was investigated after adding 6, 8, 12wt% Fe powder into A1 matrix, respectively, in order to develop Al alloy. And the mechanical characteristics of the alloy which was produced by the above method were studied. The hardness and ultimata tensile strength of the material with different compositions were found to be increased with annealing temperatures and holding times. Intermetallic compound of $Al_3Fe$ and carbide of $Al_4C_3$ phases, which were generated from the different compositions during annealing, were found. It was suggested that enhancement of mechanical properties of Al-Fe alloy system was due to the presence of these preapitates that constrained grain growth and blocked dislocation movement in the alloy system.