• Proceedings of the Computational Structural Engineering Institute Conference
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• 1999.04a
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• pp.102-109
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• 1999

Two phase simulated annealing algorithm is presented as a structural optimization technique and applied to minimum weight design of space trusses subjected to stress and displacement constraints under multiple loading conditions. Univariate searching algorithm is adopted for automatic selection of initial values of design variables for SA algorithm. The proper values of cooling factors and reasonable stopping criteria for optimum design of space truss structures are proposed to enhance the performance of optimization process. Optimum weights and design solutions are presented for two well-blown example structures and compared with those reported in the literature.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.897-897
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• 2005

We report QLA (Quenching-rate controlled Laser Annealing) system as new concept using pulsed DPSSL and CW lasers. This process can control temperature quenching-rate of poly-Si crystallization by additional CW laser and fabricate high quality poly-Si with faster scanning speed than conventional processes. In this paper, QLA system, the experimental results and theoretical discussion will be introduced.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.75-75
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• 2004

• Journal of Powder Materials
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• v.4 no.1
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• pp.48-54
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• 1997

NiAl powders containing oxide dispersoids have been produced by mechanical alloying process in a controlled atmosphere using high energy attrition mill. The powders have been consolidated by hot extrusion and hot pressing followed by isothermal annealing to induce microstructure coarsening to improve high temperature properties. Grain growth and dispersoid coarsening kinetics have been investigated as functions of annealing time and temperature. Coarsening of dispersion strengthen NiAl and dispersoid has been discussed. Some clues of secondary recrystallization have been investigated. Mechanical property measurements have been also made and correlated with the microstructures.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.375-378
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• 1988

In this paper a newly designed rapid thermal process (RTP) structure is proposed to the slip induced in silicon wafers considerably. The reflectors and a graphite radiation were used to compensate the temperature difference causing slip in silicon wafers. From our experiments it is known that slip can be removed during a rapid thermal annealing at high temperature.

• Proceedings of the KIEE Conference
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• 1997.07b
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• pp.699-701
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• 1997

The simulated annealing(SA) algorithm is a stochastic strategy for search of the ground state and a powerful tool for optimization, based on the annealing process used for the crystallization in physical systems. It's main disadvantage is the long convergence time. Therefore, this paper proposes a stochastic algorithm combined with conventional deterministic optimization method to reduce the computation time, which is called SDS(Stochastic-Deterministic-Stochastic) method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.598-601
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• 2000

We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.115-130
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• 1995

In order to produce Cu nanocrystallite in silicon wafer, the implantation technique was used. The samples of silicon (100) wafers were implanted by $Cu^+$ ions at 100 keV and with varying the doses at room temperature. Post-annealing was performed at $800^{\circ}C$ with Ar environment. To investigate the formation of Cu nanocrystallite with ion doses and growth process by thermal annealing, SIMS and HRTEM(high resolution transmission electron microscopy)spectra were studied.

• Corrosion Science and Technology
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• v.6 no.6
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• pp.275-281
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• 2007

The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of $AlCl_3$ and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at $100-400A/m^2$ at 293 K in a solution containing 1.53 mol/L of $H_2SO_4$ and 0.0185 mol/L of $Al_2(SO_4)_3$. The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. However, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy; the stresses remain in the anodic oxide films, increasingthe likelihood of cracks. It is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be attributable to a decrease in the internal stresses in anodic oxide films

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.49-54
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• 2003

We have investigated the effects of hydrogen annealing on the physical and electrical properties of $SrBi_{2}Ta_{2}O_9(SBT)$ thin films in the Pt/SBT/Si (MFS) structure and Pt/SBT/Pt (MFM) one, respectively. The microstructure and electrical characteristics of the SBT films were deteriorated after hydrogen annealing due to the damage of the SBT films during the annealing process. To investigate the reason of the degradation of the SBT films in this work, in particular, the effect of the Pt top electrodes, SBT thin films deposited on Si, Pt, respectively, were annealed with the same process conditions. From the XRD, XPS, P-V, and C-V data, it was seen that the SBT itself was degraded after $H_2$ annealing even without the Pt top electrodes. In addition, the degradation of the SBT films after $H_2$ annealing was accelerated by the catalytic reaction of the Pt top electrodes which is so-called hydrogen degradation. To prevent this phenomenon, we proposed the alternative top electrode material, i.e. Ir, and the electrical properties of the SBT thin films were examined in the $Ir/IrO_2/SBT/IrO_2$ structures before and after the H$_2$ annealing and recovery heat-treatment processes. From the results of the P-V measurement, it could be concluded that Ir is one of the promising candidate as the electrode material for degradation resistance in the MFM structure using SBT thin films.