• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.351-356
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• 1995

A optical switch which on the LiNbO$_3$substrate is fabricated by using proton exchange method and self-alignet method. The annealing at 400[$^{\circ}C$] was carried out to control waveguide width and depth. A self-aligned method, which doesn\`t need the additional mask precesses, was applied to simplify the fabrication processes and to maximize efficiency of electric field application. The depths of the two annealed optical waveguides, which were measured by using ${\alpha}$-step, ware 1.435[K${\AA}$] and 1,380[K${\AA}$]. Using ${\alpha}$-step facility, we examined that the width of waveguides is increased from 5[$\mu\textrm{m}$] to 6.45[$\mu\textrm{m}$] and 6.3[$\mu\textrm{m}$] due to the annealing effects. The process of proton exchange was done at 400[$^{\circ}C$] for 60[min] and annealing process was done at 400[$^{\circ}C$] for 60[min]. The high speed optical modulator has very good figures of merits: the measured voltage of the input waveguide power is 3.5[V], the voltage of the coupling waveguide power is 3.9[mV], and -29.5[dB] crosstalk and 8[V] switching voltage were achieved.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.126-132
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• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2279-2282
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• 2007

Highly crystalline, uniform Fe nanoparticles were successfully synthesized and encapsulated in zirconia shell using sol-gel process. Two different approaches have been employed for the coating of Fe nanoparticle with zirconia. The thickness of zirconia shell can be readily controlled by altering molar ratio of Fe nanoparticle core to zirconia precursor in the first case where as reaction time was found to be most effective parameter to controlled the shell thickness in the second method. The structure and magnetic properties of the ZrO2-coated Fe nanoparticles were studied. TEM and HRTEM images show a typical core/shell structure in which spherical α-iron crystal sized of ~25 nm is surrounded by amorphous ZrO2 coating layer. TGA study showed an evidence of weight loss of less than 2% over the temperature range of 50-500 °C. The nanoparticles are basically in ferromagnetic state and their magnetic properties depend strongly on annealing temperature. The thermal treatment carried out in as-prepared sample resulted in reduction of coercivity and an increase in saturation magnetization. X-ray diffraction experiments on the samples after annealing at 400-600 °C indicate that the size of the Fe@ZrO2 particles is increased slightly with increasing annealing temperature, indicating the ZrO2 coating layer is effective to interrupt growing of iron particle according to heat treatment.

• Journal of IKEEE
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• v.14 no.3
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• pp.219-223
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• 2010

In this study, we fabricated the HgSe nanoparticle-based thin film transistors (TFTs) of back gate structure with PVA gate dielectric. The fabricated TFTs show the improved electrical characteristics in the mobility of $16\;cm^2$/Vs and the on/off ratio of $10^4$ after annealing process at $100^{\circ}C$ for 5 min. AFM images demonstrate that the decrease in surface roughness according to annealing process leads to the improvement of electrical characteristics. The change in drain current caused from the conditions of flexible substrate is investigated under 0.6% strain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.93-98
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• 2020

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and I_on/I_off ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.595-600
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• 2020

The photovoltaic properties of perovskite solar cells (PSCs) with a carbon electrode fabricated using different annealing processes are investigated. Perovskite formation (50 ℃, 60 min) using a hot-plate and an oven is carried out on cells with a glass/fluorine doped TiO₂/TiO₂/ZrO₂/carbon structure, and the photovoltaic properties of the PSCs are analyzed using a solar simulator. The microstructures of the PSCs are characterized using an optical microscope, a field emission scanning electron microscope, and an electron probe micro-analyzer (EPMA). Photovoltaic analysis shows that the energy conversion efficiency of the samples fabricated using the hot-plate and the oven processes are 2.08% and 6.90%, respectively. Based on the microstructure of the samples and the results of the EPMA, perovskite is formed locally on the carbon electrode surface as the γ-butyrolactone (GBL) solvent evaporates and moves to the top of the carbon electrode due to heat from the bottom of the sample during the hot plate process. When the oven process is used, perovskite forms evenly inside the carbon electrode, as the GBL solvent evaporates extremely slowly because heat is supplied from all directions. The importance of the even formation of perovskite inside the carbon electrode is emphasized, and the feasibility of oven annealing is confirmed for PSCs with carbon electrodes.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.5-8
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• 2006

The growth properties of MOD-YBCO films were investigated. To enhance the growth rate of YBCO layer and inhibit the build-up of HF gas during the annealing process in TFA-MOD for YBCO coated conductors the method of low pressure annealing was employed. Total pressure was changed from 700Torr to 1Torr and its effect on growth of YBCO films was compared with atmospheric one. The lower Pressure was effective to control of the pore size in MOD method . Surface morphology of YBCO films processed at low total pres sure was rough and composed of random YBCO (103) grains. But large pores, usually observed at atmospheric process in MOD disappeared and also the number of pores was reduced at low pressure annealing. Also discussed ate the effects of Fluorine-free Y and Cu precursor solution on the development of microstructure. Dense surface me phology and with less and small pores can be provided through controlling Fluorine content.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.482-490
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• 2023

The purpose of this study was to analyze microstructural changes and evaluate the mechanical properties of TWIP steel subjected to variations in heat treatment, in order to identify optimal process conditions for enhancing the performance of TWIP steel. For this purpose, a homogenization heat treatment was conducted at 1,200 ℃ for 2 h, followed by hot rolling at temperature exceeding 1,100 ℃ and cold rolling. Annealing heat treatment is achieved using a muffle furnace in the range of 600 ℃ to 1,000 ℃. The microstructure characterization was performed with an optical microscope and X-ray diffraction. Mechanical properties are evaluated using micro Vickers hardness, tensile test, and ECO index (UTS × Elongation). The specimens annealed at 900 ℃ and 1,000 ℃ experienced a significant decrease in hardness and strength due to decarburization. Consequently, the decarburization phenomenon is closely related to the heat treatment process and mechanical properties of TWIP steel, and the effect of the microstructure change during annealing heat treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.319-321
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• 2004

We report on progress in developing high-power excimer lasers as well as UV-optics for creating low-temperature poly silicon (LTPS). A new high-power excimer laser offers 315 Watts with high pulse to pulse energy stability. Larger substrates can now be processed in better quality with either the SLS process or the new optics for line beam excimer laser annealing.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.92-92
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• 2003