• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.302-308
• /
• 2013

In this study, we report the synthesis and characteristics of gallium oxide ($Ga_2O_3$) nanoparticles prepared by the polymerized complex method. $Ga_2O_3$ nanoparticles were synthesized using $Ga(NO_3)_3$, ethylene glycol, and citric acid as the starting materials at a low temperature of $500{\sim}800^{\circ}C$. The temperature of the weight reduction by the loss of organic precursor was revealed using TG-DTA analysis. The crystal structural change of $Ga_2O_3$ nanoparticles by the annealing process was investigated by XRD analysis. The morphologies and the size distributions of $Ga_2O_3$ nanoparticles were analyzed using SEM.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.37 no.2
• /
• pp.271-277
• /
• 2013

Skin pass rolling is a very important process for applying a certain elongation to a strip in the cold rolling and annealing processes, which play an important role in preventing the stretching of the yield point when the material is processed. The exact prediction of the rolling force is essential for obtaining a given elongation with the steel grade and strip size. Unlike hot rolling and cold rolling, skin pass rolling is used to apply an elongation of within 2% to the strip. Under a small reduction, it is difficult to predict the rolling force because the elastic deformation behavior of the rolls is complicated and a model for predicting the rolling force has not yet been established. Nevertheless, the exact prediction of the rolling force in skin pass rolling has gained increasing importance in recent times with the rapid development of high-strength steels for use in automobiles. In this study, the possibility of predicting the rolling force in skin pass rolling for producing various steel grades was examined using foil rolling theory, which is known to have similar elastic deformation behavior of rolls in the roll bite. It was found that a noncircular arc model is more accurate than a circular model in predicting the roll force of high-strength steel below TS 980 MPa in skin pass rolling.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.9
• /
• pp.3061-3070
• /
• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.202-208
• /
• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.11
• /
• pp.771-780
• /
• 2001

It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

• Journal of the Korean Electrochemical Society
• /
• v.6 no.2
• /
• pp.145-152
• /
• 2003

Capacitance of a hybrid capacitor that has characteristics of both electrolyte capacitor and supercapacitor is determined by anode surface covered with oxide layer. In this study, optimal condition processes for anode to fabricate a high voltage hybrid capacitor was investigated. We mixed aluminum powder having mean particle size of $40{\mu}m$ with NaCl powders at weight ratio of 4 : 1 and prepared a disk type electrode after annealing at various temperature. After dissolving NaCl in $50^{\circ}C$ distilled water, heat treatment, eletropolishing, chemical treatment, and the first and the second etching of Al disk were conducted. In each process, capacitances and resistances of the disk measured by ac-impedance analyzer were compared to find its optimum treatment condition. Also, the surface morphology of treated disks were observed and compared by SEM. After the second etching, the Al disk was anodized at 365V to make an anode of hybrid supercapacitor that can be operated at 300V, Capacitance and resistance of the anodized Al disk electrode was compared with those of commercialized conventional aluminum electrolytic capacitor at different frequencies.

• Korean Journal of Clinical Laboratory Science
• /
• v.48 no.1
• /
• pp.8-14
• /
• 2016

Granulosa cells surround the oocyte within the ovarian follicle and play an essential role in creating conditions required for oocyte as well as follicular development. The current study was conducted to examine the gene expression profile of mouse ovaries during the primordial to primary follicle transition process. Total RNAs from mouse ovaries on day 5 and day 12 were synthesized cDNA using annealing control primers. The DEGs were cloned and their identities were analyzed by BLAST search. The Plekha5 and Anxa11 were highly expressed in primary follicle stage. By contrast, their expression was increased in granulosa cells at the primary follicle stage. We have successfully discovered a list of genes expressed in day 5 and day 12 ovaries and confirmed that some of them are differentially expressed in PMF and/or PRI. This is a spatial-temporal regulatory mechanism on the ovarian folliculogenesis through membrane fusion. The gene expression profile from the current study would provide insight for future study on the mechanism(s) involved in primordial-primary follicular transition. This will provide information for identification of the mechanism of ovarian dysfunction.

• Journal of Plant Biotechnology
• /
• v.42 no.2
• /
• pp.117-122
• /
• 2015

Canola is a crop globally used for production of oil and biofuel. Cultivation area and import volume of living modified (LM) canola have been increasing every year. As canola import dependence has reached 100% in Korea, efforts have been made for safety management of LM canola and ecological risk assessment. We developed a set of multiplex PCR method for simultaneous detection of 5 LM canola events (Topas 19/2, Rf3, Ms8, RT73 and T45) approved in Korea. The multiplex PCR assay developed allows amplification of estimated products of 5 LM canolas from event specific primer sets. Primer extension time was skipped for a time-consuming process and two annealing steps (20 cycles at $55^{\circ}C$ and 20 cycles at $60^{\circ}C$) were performed for yielding the best result which was sufficient to distinguish five LM canolas. Our results suggest that multiplex PCR method provides a cost and time-effective approach for LM canola detection.

• Korean Journal of Materials Research
• /
• v.21 no.5
• /
• pp.277-282
• /
• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.12
• /
• pp.1219-1227
• /
• 2014

For development of the surface acoustic wave bandpass filter(SAW-BPF), we fabricated the high quality ZnO thin films through the step-by-step(double) deposition using two different deposition methods which are pulsed laser deposition(PLD) and RF sputtering techniques. The second growth of ZnO thin films was completed by RF sputtering method on the first ZnO thin films pre-deposited by PLD method. The characteristics of ZnO thin films were analyzed by XRD, SEM and AFM systems. The FWHM of ${\omega}$-scan analysis and the minimum RMS value of surface roughness of step-by-step grown ZnO thin films were $0.79^{\circ}$ and 1.108 nm respectively. As a result, the crystallinity and the preferred orientation of the grown ZnO thin films were kept good quality and the surface roughnesses of those were improved by post-annealing process as comparison with ZnO thin film fabricated by the conventional PLD technique only. Using these proposed ZnO thin films, we demonstrated the RF device such as SAW-BPF, built by the proposed ZnO thin films, shows that it has the bandwidth of 2.98 MHz and the insertion loss of 36.5 dB at the center frequency of 260.8 MHz, respectively.