• Current Photovoltaic Research
• /
• 제3권1호
• /
• pp.32-38
• /
• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• 한국자동차공학회논문집
• /
• 제15권1호
• /
• pp.8-15
• /
• 2007

Freeway corridors consist of urban freeways and parallel arterials that drivers can use alternatively. Ramp metering in freeways and signal control in arterials are contemporary traffic control methods that have been developed and applied in order to improve traffic conditions of freeway corridors. However, most of the existing studies have focused on either optimal ramp metering in freeways, or progression signal strategies between arterial intersections. There have been no traffic control systems in Korea that integrates the freeway ramp metering and arterial signal control. The effective control strategies for freeway operations may cause negative effects on arterial traffic. On the other hand, traffic congestion and bottleneck phenomenon of arterials due to the increasing peak-hour travel demand and ineffective signal operation may generate an accessibility problem to freeway ramps. Thus, the main function of the freeway which is the through-traffic process has not been successful. The purpose of this study is to develop an integrated control model that connects freeway ramp metering systems and signal control systems in arterial intersections. And Optimization of integrated control model which consists of ramp metering and signal control is another purpose. The design of experiment, neural network, and simulated annealing are used for optimization.

• 분석과학
• /
• 제17권2호
• /
• pp.173-179
• /
• 2004

Ethylene glycol의 polymerization-complex route를 통한 졸-겔 합성법으로 안정하고 균일한 barium titanate 분말 및 박막을 제조하였다. 출발 용액으로 킬레이팅 리간드인 acetylacetone을 barium과 titanium 용액에 치환시켜 합성한 복합 산화물 졸 용액을 사용했을 때 박막을 만들 수 있었다. 졸 용액의 입자 분포도는 안정한 gaussian 분포를 보였으며, $1100^{\circ}C$에서 열처리한 겔 분말의 입자 크기는 40~77 nm이었다. 열분석 및 FT-IR, $^{13}C$ CP/MAS NMR 스펙트라와 XRD 결과로부터 (Ba-Ti)-oxycarbonate 중간상을 거쳐 $BaTiO_3$ 분말이 형성됨을 알 수 있었다. Quartz에 스핀 코팅으로 제조한 박막은 치밀하고 균열 없는 미세 조직을 보였다. $1100^{\circ}C$에서 열처리한 박막 표면의 입자 크기는 220 nm였으며 치밀한 입자 성장을 관찰할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.450-450
• /
• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• 한국전기전자재료학회논문지
• /
• 제24권6호
• /
• pp.473-479
• /
• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• 한국전기전자재료학회논문지
• /
• 제24권6호
• /
• pp.458-462
• /
• 2011

Soution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) with varying Zr content were fabricated. The ZIZO TFT (Zr=20 at. %/Zn) has an optimal performance with the saturation field effect mobility of 0.77 $cm^2/Vs$, the threshold voltage (Vth) of 2.1 V, the on/off ratio of $4.95{\times}10^6$, and subthreshold swing (S.S) of 0.73 V/decade. Using this optimized ZIZO TFT, the positive and negative gate bias stress according to annealing temperature was also investigated. While the Vth shifts dramatically after 1,000 s of both gate bias stresses, variations in the S.S are negligible. It suggests that electrons or holes are tem porarily trapped in the gate insulator, the semiconductor, or the interface between both layers.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.9-10
• /
• 2010

Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G ($1580\;cm^{-1}$) and the G'($2700\;cm^{-1}$) bands, both related to ideal graphene, clearly observed. Presence of the D ($1350\;cm^{-1}$) band indicates presence of defects in our GOS films, whose elimination remains as a challenge in the future. To obtain qualified graphene films on Si substrate, formation of qualified SiC films is crucial in the first place, and is achieved by tuning the growth parameters into a process window[5]. With a potential for forming graphene films on large-scale Si wafers, GOS is a powerful candidate as a key technology in bringing graphene into silicon technology.

• 한국재료학회지
• /
• 제8권4호
• /
• pp.359-361
• /
• 1998

$SiH_{4}$를 반응물질로 사용하여 electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD)로 실리콘 기판위에 증착한 수소화 비정질 실리콘(a-Si:H)으로부터 가시 photoluminescence(PL) 가 관찰되었다. a-si:H/Si로 부터의 PL은 다공질실리콘으로부터의 PL과 유사하였다. 급속열처리에 의해 $500^{\circ}C$에서 2분간 산소분위기에서 어닐링된 시편의 수소함량은 1~2%로 줄어들었고 시편은 가시 PL을 보여주지 않았는데 이는 a-Si:H의 PL과정에서 수소가 중요한 역할을 한다는 것을 뜻한다. 증착된 a-Si:H의 두께가 증가함에 따라 PL의 세기는 감소하였다. $SiH_{4}$를 사용하여 ECR-PECVD에 의해 Si상에 증착된 a-Si:H로부터의 가시 PL은 Si과 증착된 a-Si:H막 사이에 증착이 이루어지는 동안에 형성된 수소화실리콘으로부터 나오는 것으로 추론된다.

• 한국재료학회지
• /
• 제25권3호
• /
• pp.149-154
• /
• 2015

We evaluated the developed microstructures and mechanical properties of a severely plastically deformed Ni-30Cr alloy. Normal rolling and differential speed rolling were used as deformation processes, and the thicknesses of the specimens were reduced to 68 % of the original thickness after holding at $700^{\circ}C$ for 10 min and annealing at $700^{\circ}C$ for 40 min to obtain a fully recrystallized microstructure. Electron backscattering diffraction was used to analyze the characteristic distribution of the grain boundaries on the deformed and annealed specimens. Differential speed rolling was more effective for refining grains in comparison with normal rolling. The grain size was refined from 33 mm in the initial material to 8.1 mm with normal rolling and 5.5 mm with differential speed rolling. The more refined grain in the differential-speed-rolled material directly resulted in increases in the yield and tensile strengths by 68 % and 9.0%, respectively, compared to normal rolling. We systematically explain the relationship between the grain refinement and mechanical properties through a plastically deformed Ni-30Cr alloy based on the development of a deformation texture. The results of our study show that the DSR process is very effective when used to enhance the mechanical properties of a material through grain refinement.

• 대한금속재료학회지
• /
• 제48권8호
• /
• pp.691-698
• /
• 2010

A study has been carried out to evaluate the interaction behavior between a lanthanide element and clad material in order to analyze the effect of the lanthanide element on the fuel cladding chemical interaction (FCCI). A diffusion couple test between Misch metal (70Ce-30La) and ferritic-martensitic steel (Gr.92) was performed at $660^{\circ}C$, followed by a microstructural analysis of the coupled sample. The results showed that Ce in the Misch metal, rather than La, reacted with the ferritic-martensitic steel (FMS) to form an interaction layer that penetrated the clad thickness. Fe diffused outside the clad interface to form an $Fe_2Ce$ compound, leaving a depletion of Fe caused by excess diffusion as well as by the formation of Cr-rich precipitation inside the interaction layer. The rate of growth followed the cubic rate law, which indicated that Fe depletion was caused by the diffusion of Fe and that the associated Cr-rich phase formation controlled the whole diffusion process.