• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.160-164
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• 2003

The external magnetic field dependency of the impedance, resistance, and inductance of the meander pattern fabricated by using Co-base amorphous ribbon has been investigated in the frequency range of 300 ㎑∼1 ㎓. The amorphous ribbon was patterned to the meander pattern through conventional photolithography and wet etching process. The extremely high sensitivity in impedance changing ratio by external magnetic field was observed. This is due to the transverse magnetic anisotropy the pattern which was induced by magnetic field annealing. The impedance had peak value at the external field of -13 Oe and the impedance changing ratio 100 ${\times}$ (Z$\_$13/-Z$\_$0/)/Z$\_$0/) was about 210％ at the frequency of 50 MHz.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.153-158
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• 2008

Fe-aluminides have the potential to replace many types of stainless steels that are currently used in structural applications. Once commercialized, it is expected that they will be twice as strong as stainless steels with higher corrosion resistance at high temperatures, while their average production cost will be approximately 10% of that of stainless steels. Self-propagating, high-temperature Synthesis (SHS) has been used to produce intermetallic and ceramic compounds from reactions between elemental constituents. The driving force for the SHS is the high thermodynamic stability during the formation of the intermetallic compound. Therefore, the advantages of the SHS method include a higher purity of the products, low energy requirements and the relative simplicity of the process. In this work, a Fe-aluminide intermetallic compound was formed from high-purity elemental Fe and Al foils via a SHS reaction in a hot press. The formation of iron aluminides at the interface between the Fe and Al foil was observed to be controlled by the temperature, pressure and heating rate. Particularly, the heating rate plays the most important role in the formation of the intermetallic compound during the SHS reaction. According to a DSC analysis, a SHS reaction appeared at two different temperatures below and above the metaling point of Al. It was also observed that the SHS reaction temperatures increased as the heating rate increased. A fully dense, well-bonded intermetallic composite sheet with a thickness of $700\;{\mu}m$ was formed by a heat treatment at $665^{\circ}C$ for 15 hours after a SHS reaction of alternatively layered 10 Fe and 9 Al foils. The phases and microstructures of the intermetallic composite sheets were confirmed by EPMA and XRD analyses.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• Polymer(Korea)
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• v.33 no.6
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• pp.520-524
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• 2009

The effects of oxidative degradation on the performance of crosslinked polyethylene pipes were analyzed by the investigation of tensile properties and chemical structure change of the pipes during oxidative degradation. Annealing at high temperatures or UV irradiation method was used to induce the oxidative degradation of the crosslinked polyethylene pipes and the effects of the die temperature on the oxidative degradation of the pipes were also investigated. The tensile properties and chemical structure change of the pipes were investigated by universal testing machine and FT-IR, respectively. With the progress of thermo-oxidative degradation the tensile strength of the pipes slowly decreased but the elongation at break rapidly decreased, and the chemical structure of the pipes also changed considerably because of the introduced oxygen molecules. These results would be useful in estimating the performance deterioration of the crosslinked polyethylene pipes due to the oxidative degradation during production and storage.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.49-53
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• 2009

The chemical properties of SiOC film was studied for inter-layer insulator. SiOC film was formed with non polarity due to the appropriate union by the alkyl and hydroxyl group. An amorphous structure of non polarity can induce the low dielectric constant materials. The chemical properties of thin film can define the bonding structure owing to the ionic variation, and the analysis of chemical properties was researched by the carbon content using the FTIR spectra, and induced the film with non polarity. The electrical properties is the electron flow, and is always not the same as the chemical properties. The electrical properties of SiOC film with various flow rate ratios was analyzed and researched the correlation between the chemical properties. SiOC film showed the increasing of the leakage current after annealing process, and abruptly increased the carbon content at some samples. But the sample with increasing the carbon content decreased the leakage current. It means that the chemical properties is not the same as the electrical properties, and the carbon is related with the variation of the bonding structure, and does not contribute the current flow.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.341-345
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the contact anlge and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/$O_2$ flow rate ratio and the dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and there is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed the chemical shift.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.618-622
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• 2014

Oxide phosphorescent phosphor has an wide application in ceramic art and decoration due to its chemical and mechanical properties. Here, phosphorescent properties of strontium aluminate phosphor ($SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$) emitting yellowish-green light was investigated with thermal treatment at $1250^{\circ}C$ under air and reducing atmosphere. The characterizations of thermally treated samples were analyzed using X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), fluorescence spectrometer. $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ still showed a good phosphorescent properties after annealing process in reducing atmosphere, while phosphorescence of $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ annealed in air seriously degraded, due to oxidation of $Eu^{2+}$ to $Eu^{3+}$ ions. It was also observed that $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ annealed in reducing atmosphere emitted yellowish-green light during 3 h after being exposed to sunlight.

• Journal of Powder Materials
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• v.12 no.5 s.52
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• pp.357-361
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• 2005

Fe-doped skutterudite $CoSb_3$ with a nominal composition of $Fe_{x}Co_{4-x}Sb_{12}(0\;{\le}\;x\;{\le}\;2.5)$ has been synthesized by mechanical alloying (MA) of elemental powders, followed by hot pressing. Phase transformations during mechanical alloying and hot pressing were systematically investigated using XRD. Single phase skutterudite was successfully produced by vacuum hot pressing using as-milled powders without subsequent annealing. However, second phase in the form of marcasite structure $FeSb_2$ was found to exist in case of $x\;{\ge}\;2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties as functions of temperature and Fe contents were evaluated for the hot pressed specimens. Fe substitution up to x=1.5 with Co in $Fe_{x}Co_{4-x}Sb_{12}$ appeared to increase thermoelectric figure of merit (ZT) and the maximum ZT was found to be 0.78 at 525K in this study.