• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.6
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• pp.53-60
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• 2018

In this paper, the effect of different 3D printing parameters including laminated angle and annealing temperature is observed their effect on FDM conductive 3D printing. In FDM 3D printing, a conductive filament is heated quickly, extruded, and then cooled rapidly. FDM 3D Print conductive filament is a poor heat conductor, it heats and cools unevenly causing the rapid heating and cooling to create internal stress. when the printed conductive specimens this internal stress can be increase electrical resistance and decrease electrical conductivity. Therefore, This experiment would like to use annealing to remove internal stress and increase electrical conductivity. The result of experiment when 3D printing conductive specimen be oven cooling of annealing temperature $120^{\circ}C$ electrical resistance appeared decrease than before annealing. So We have found that 3D printing annealing removes internal stresses and increases the electrical conductivity of printed specimens. These results are very useful for making conductive 3D printing electronic circuit, sensor ect...with electrical conductance suitable for the application.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.2
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• pp.82-90
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• 2019

In this paper, the effects of different 3D printing conditions including oil lubrication and annealing are observed for their effects on tensile testing. In 3D printing, a press-out extrude filament is rapidly heated and cooled to create internal stress in the printed part. The 3D printing internal stress can be removed using oil-coated filament and annealing. During the oven cooling at an annealing temperature of $106^{\circ}C$, the stress of the specimens with laminated angle $0^{\circ}$ tends to increase by 12.6%, and that of the oil-coated filament printing specimens is increased by 17%. At the annealing temperature of $106^{\circ}C$, the stress of the oil-coated filament printing specimens tends to increase by 35%. In this study, we have found that the oil lubrication and annealing remove the internal stresses and increase the strength of the printed specimens. The oil lubrication and annealing reform the crystalline structures to even out the areas of high and low stress, which creates fewer fragile areas. These results are very useful for the manufacture of 3D printing products with a suitable mechanical strength for applications.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.31-36
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• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.4
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• pp.35-41
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• 2002

To solve the large scale optimization problem approximately, various approaches have been introduced. They are mainly based on recent research advancement of simulations for evolutions, flocking, annealing, and interactions among organisms on artificial environments. The typical ones are simulated annealing(SA), artificial neural network(ANN), genetic algorithms(GA), tabu search(TS), etc. Recently the particle swarm optimization(PSO) has been introduced. The PSO simulates the process of birds flocking or fish schooling for food, as with the information of each agent Is share by other agents. The PSO technique has been applied to various optimization problems of which variables are continuous. However, there are seldom trials for visualization of searching process. This paper proposes a new visualization tool for searching process particle swarm optimization(PSO) algorithm. The proposed tool is effective for understanding the searching process of PSO method and educational for students.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.651-652
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• 2008

In this paper, we suggest a new multiobjective optimization algorithm which is based on the simulated annealing(SA) method. The proposed algorithm uses population-based simulated annealing and adapts elitism in the process of selection.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.254-257
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• 2009

The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.193-195
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• 1996

In amorphous transformer core, magnetic field annealing is required for inducing uniaxial magnetic anisotropy to circular direction of the core. Generally annealing temperature is about foot, so insulator using in solenoid bed must have a high temperature stability, mechanical strength and good machinability. In this study, we made the magnetic field annealing apparatus using insulators, conductors, connectors and power supply. And then tested the apparatus in annealing process of 50 kVA amorphous transformers.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1997.10a
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• pp.101-107
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• 1997

Development on the mechanical properties of steel sheet for the automobile body panel is very important in the BAF(Batch annealing furnace) annealing process. Because of the heat treatment method in the BAF, mechanical properties was decided on the heat treatment method of the coil. So, we tested on the development of mechanical properties according to heat treatment method at the annealing furnace using the Ax atmospheric gas and the HNx atmospheric gas. As a result of several investigations. We confirmed the following characteristics ; mechanical properties was changed under the influence of the annealing cycle, the heat treatment method and the atmospheric gas. And, elongation in the HNx BAF was better than the Ax BAF. Finally, most important thing in the BAF is using proper annealing cycle in order to get a good quality.