• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.6.2-6.2
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• 2009

Nanostructured materials arecurrently receiving much attention because of their unique structural andphysical properties. Research has been stimulated by the envisagedapplications for this new class of materials in electronics, optics, catalysisand magnetic storage since the properties derived from nanometer-scalematerials are not present in either isolated molecules or micrometer-scalesolids. This study presents the experimental results derived fromthe various functional materials processed in nano-scale using pulsed laserablation, since those materials exhibit new physical phenomena caused by thereduction dimensionality. This presentation consists of three mainparts to consider in pulsed laser ablation (PLA) technique; first nanocrystallinefilms, second, nanocolloidal particles in liquid, and third, nanocoating fororganic/inorganic hybridization. Firstly, nanocrystalline films weresynthesized by pulsed laser deposition at various Ar gas pressures withoutsubstrate heating and/or post annealing treatments. From the controlof processng parameters, nanocystalline films of complex oxides and non-oxidematerials have been successfully fabricated. The excellentcapability of pulsed laser ablation for reactive deposition and its ability totransfer the original stoichiometry of the bulk target to the deposited filmsmakes it suitable for the fabrication of various functionalmaterials. Then, pulsed laser ablation in liquid has attracted muchattention as a new technique to prepare nanocolloidal particles. Inthis work, we represent a novel synthetic approach to directly producehighly-dispersed fluorescent colloidal nanoparticles using the PLA from ceramicbulk target in liquid phase without any surfactant. Furthermore, novel methodbased on simultaneous motion tracking of several individual nanoparticles isproposed for the convenient determination of nanoparticle sizedistributions. Finally, we report that the GaAs nanocrystals issynthesized successfully on the surface of PMMA (polymethylmethacrylate)microspheres by modified PLD technique using a particle fluidizationunit. The characteristics of the laser deposited GaAs nanocrytalswere then investigated. It should be noted that this is the first successfultrial to apply the PLD process nanocrystals on spherical polymermatrices. The present process is found to be a promising method fororganic/inorganic hybridization.

• 한국결정성장학회지
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• 제24권3호
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• pp.94-98
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• 2014

$LiCoO_2$는 박막 베터리의 양극재료로써 많은 관심을 받고 있다. 본 연구에서는 스핀 코터를 이용한 졸-겔 합성공정과 열처리 과정에 의해서 Au 지지체 위에 $LiCoO_2$ 박막을 합성하였다. 합성된 박막의 구조는 X-선회절분석, 라만분광 광도계를 이용하여 분석하였다. 박막의 입자 형태는 전자현미경에 의해 관찰하였다. X-선회절분석, 라만분광광도계의 결과로부터, $550^{\circ}C$와 $750^{\circ}C$에서 합성된 박막은 스피넬구조와 층상 암염 형 구조를 가지는 박막으로 보이며, $650^{\circ}C$에서 합성된 박막은 층상 암염 형 구조와 스피넬 구조가 혼재되어져 있는 것으로 생각된다. $750^{\circ}C$에서 합성된 박막은 다른 낮은 온도에서 합성된 박막보다 큰 결정질의 균일한 분포의 입자를 가지는 것으로 확인되었다.

• 한국결정성장학회지
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• 제10권2호
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• pp.111-115
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• 2000

Ba과 Ti의 금속 유기 화합물을 이용하여 (100) $SrTiO_3$ 기판 위에 $BaTIO_3$ 박막을 코팅-열분해법으로 제조하였다. $450^{\circ}C$에서 사전 열처리한 비정질상의 박막은 $2\times 10^{-4}$ atm으로 조정된 산소 분압 하에서 $700^{\circ}C$ 이상의 온도로 열처리함으로써 결정화되었다. $800^{\circ}C$ 이하에서 제조한 박막의 기판에 수직한 면의 격자상수는 cubic $BaTIO_3$의 a 값에 가까우면 $800^{\circ}C$ 이하에서 제조한 박막의 tetragonal $BaTIO_3$ 의 a 값에 가까 웠다. 박막과 기판의 정렬상태를 XRD $\beta$ scan과 pole-figure로 분석한 결과 $BaTIO_3$ 박막은 $SrTiO_3$ 기판과 에피택시 관계가 있었다. $800^{\circ}C$에서 열처리한 박막의 표면은 0.4${\mu}m$ 정도의 섬 형태의 입자로 구성되어 있었고 약 0.8$\mu\textrm{m}$의 두께를 가진 단면은 구형의 입자가 층을 이루고 있었다.

• 대한기계학회논문집A
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• 제26권2호
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• pp.260-266
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• 2002

DLC films were deposited on Si wafer by RF plasma assisted CVD using CH4 gas. Tribological tests were conducted using rotating type ball on disk friction tester in dry air. Four kinds of mating balls were used. The mating balls were made with stainless steel but apply different annealing conditions to achieve different hardness conditions. Testing results in all load conditions showed that the harder the mating materials, the lower the friction coefficient among the three kind of martensite mating balls. In case of austenite balls, the friction coefficients were lower than fully annealed martensite ball. The high friction coefficient in soft martensite balls seems to be caused by the larger contact area between DLC film and ball. The wear tracks of DLC films and mating balls could have proven that effect. Measuring the wear track of both DLC films and mating balls have similar tendency comparing to the results of friction coefficients. Wear rate of austenite balls were also smaller than that of fully annealed martensite ball. The results of effect of applying load showed, the friction coefficients were become decrease when the applying loads exceed critical load conditions. The wear track of mating balls showed that some material transfer occurs from DLC film to mating ball during the high friction process. Raman spectra analysis showed that transferred material was a kind of graphite and contact surface of DLC film seems to undergo phase transition from carbon to graphite during the high friction process.

• 한국재료학회지
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• 제26권8호
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• 한국정보통신학회논문지
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• 제10권12호
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• pp.2258-2263
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• 2006

본 논문은 shallow trench isolation (STI) 공정에서 ILD (inter-layer dielectric) 막의 수분에 의해 야기되는 단 채널 (short-channel) nMOSFET의 hump 특성의 원인을 분석하고 억제 방법을 제안하였다. 다양한 게이트를 가지는 소자와 TDS-APIMS(Thermal Desorption System-Atmospheric Pressure Ionization Mass Spectrometry) 측정을 이용하여 hump 특성을 체계적으로 분석하였고, 분석을 바탕으로 단 채널 hump모델을 제안하였다. 제안된 모델에 의한 단 채널 nMOSFET의 hump 현상은 poly-Si 게이트 위의 ILD 막의 수분이 상부의 SiN 막에 의해 밖으로 확산되지 못하고 게이트와 STI의 경계면으로 확산하여 발생한 것이 며, 이를 개선하기 위해 상부의 SiN 막의 증착 전 열공정을 통해 ILD 막의 수분을 효과적으로 배출시킴으로써 hump 특성을 성공적으로 억제하였다.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.204-208
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• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

• 한국산학기술학회논문지
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• 제7권3호
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• pp.332-337
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• 2006

기판전면에 패턴 없이 15 nm Co/15 nm Ni/70 nm polysilicon/200 nm $SiO_2$/Si(100) 구조로 적층된 구조로부터 급속열처리기 (rapid thermal annealer : RTA)를 이용하여 40초간 700, 900, $1000^{\circ}C$의 실리사이드화 온도를 변화시키면서 CoNi 복합실리사이드를 형성하였다. 완성된 두께 100 nm 정도의 CoNi 복합실리사이드층으로 배선층을 만든다고 상정하여, 이중 집속이온빔(dual beam focused ion beam : FIB)을 써서 30 kV에서 표면전류를 $1{\sim}100$ pA 범위에서 조절하면서 나노급 선폭제작의 가능성을 확인하였다. 각 온도별 복합실리사이드에 동일한 이온빔 조건으로 $100{\mu}m$ 길이의 패턴을 만들고, 이온빔으로 양 끝단에 트렌치를 만들어 FE-SEM으로 각 조건에서의 선폭, 두께, 최종 에칭형상을 확인하였다. 기존 형상변형이 많아서 나노급 선폭 구현이 불리한 폴리사이드 공정에 비해서, 최초로 새로운 저저항 복합실리사이드에 대해서 100 nm 이하의 나노급 피치를 가진 선폭 제작이 $30kV{\sim}30pA$ 범위에서 가능하였다.

• 한국산학기술학회논문지
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• 제9권1호
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• pp.9-15
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• 2008

모꾸메가네는 나무결 모양을 낼 수 있는 고부가가치가 가능한 장신구 소재이며 서로 다른 금속을 가공하기 위해 융점이 다른 두 가지 이상 금속을 적층하여 붙인 잉곳 제작이 필수적이다. 기존의 모꾸메가네용 잉곳은 숯을 이용한 환원성 분위기에서 경험에 근거한 육안 판별로 만들어져서 접합의 신뢰성과 후속 가공 도중 층간 분리가 일어나는 분제가 있었다. $900^{\circ}C$에서 2.5kg의 압력을 가하면서 진공 열처리로를 이용하여 90% 이상 접합율이 가능한 조건을 확인하였다. 계면에서의 계면 확산계수가 통상의 벌크 확산계수보다 100배 향상되는 것을 확인하였고 이종 접합시에 계면 확산계수를 확인하여 $700^{\circ}C$의 저온에서 10분동안 진공열처리, 90% 이상 접합율을 가진 모꾸메가네용 잉곳을 성공적으로 제조하였다. 제조된 잉곳으로 핸드폰 외장용 모꾸메가네 시작품을 성공적으로 제조할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.