• Title/Summary/Keyword: Analog switch

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A Novel Third-Order Cascaded Sigma-Delta Modulator using Switched-Capacitor (스위치형 커패시터를 이용한 새로운 형태의 3차 직렬 접속형 시그마-델타 변조기)

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.1
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    • pp.197-204
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    • 2010
  • This paper proposes a new body-effect compensated switch configuration for low voltage and low distortion switched-capacitor (SC) applications. The proposed circuit allows rail-to-rail switching operation for low voltage SC circuits and has better total harmonic distortion than the conventional bootstrapped circuit by 19 dB. A 2-1 cascaded sigma-delta modulator is provided for performing the high-resolution analog-to-digital conversion on audio codec in a communication transceiver. An experimental prototype for a single-stage folded-cascode operational amplifier (opamp) and a 2-1 cascaded sigma-delta modulator has been implemented m a 0.25 micron double-poly, triple-metal standard CMOS process with 2.7 V of supply voltage. The 1% settling time of the opamp is measured to be 560 ns with load capacitance of 16 pF. The experimental testing of the sigma-delta modulator with bit-stream inspection and analog spectrum analyzing plot is performed. The die size is $1.9{\times}1.5\;mm$.

A 3 V 12b 100 MS/s CMOS DAC for High-Speed Communication System Applications (고속통신 시스템 응용을 위한 3 V 12b 100 MS/s CMOS D/A 변환기)

  • 배현희;이명진;신은석;이승훈;김영록
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.685-691
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    • 2003
  • This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

A 12 bit 750 kS/s 0.13 mW Dual-sampling SAR ADC

  • Abbasizadeh, Hamed;Lee, Dong-Soo;Yoo, Sang-Sun;Kim, Joon-Tae;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.760-770
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    • 2016
  • A 12-bit 750 kS/s Dual-Sampling Successive Approximation Register Analog-to-Digital Converter (SAR ADC) technique with reduced Capacitive DAC (CDAC) is presented in this paper. By adopting the Adaptive Power Control (APC) technique for the two-stage latched type comparator and using bootstrap switch, power consumption can be reduced and overall system efficiency can be optimized. Bootstrapped switches also are used to enhance the sampling linearity at a high input frequency. The proposed SAR ADC reduces the average switching energy compared with conventional SAR ADC by adopting reduced the Most Significant Bit (MSB) cycling step with Dual-Sampling of the analog signal. This technique holds the signal at both comparator input asymmetrically in sample mode. Therefore, the MSB can be calculated without consuming any switching energy. The prototype SAR ADC was implemented in $0.18-{\mu}m$ CMOS technology and occupies $0.728mm^2$. The measurement results show the proposed ADC achieves an Effective Number-of-Bits (ENOB) of 10.73 at a sampling frequency of 750 kS/s and clock frequency of 25 MHz. It consumes only 0.13 mW from a 5.0-V supply and achieves the INL and DNL of +2.78/-2.45 LSB and +0.36/-0.73 LSB respectively, SINAD of 66.35 dB, and a Figures-of-Merit (FoM) of a 102 fJ/conversion-step.

A High-speed St Low power Design Technique for Open Loop 2-step ADC (개방루프를 이용한 고속 저전력 2스텝 ADC 설계 기법)

  • 박선재;구자현;윤재윤;임신일;강성모;김석기
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.4A
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    • pp.439-446
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    • 2004
  • This paper describes high speed and low power design techniques for an 8-bit 500MSamples/s CMOS 2-step ADC. Instead of the conventional closed-loop architecture, the newly proposed ADC adopts open-loop architecture and uses a reset-switch to reduce loading time in an environment of big parasitic-capacitances of mux-array. An analog-latch is also used to reduce power consumption. Simulation result shows that the ADC has the SNDR of 46.91㏈ with a input frequency of 103MHz at 500Msample/s and consumes 203㎽ with a 1.8V single power supply. The chip is designed with a 0.18mm 1-poly 6-metal CMOS technology and occupies active area of 760${\mu}{\textrm}{m}$*800${\mu}{\textrm}{m}$.

Performance Improvement of Current-mode Device for Digital Audio Processor (디지털 오디오 프로세서용 전류모드 소자의 성능 개선에 관한 연구)

  • Kim, Seong-Kweon;Cho, Ju-Phil;Cha, Jae-Sang
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.8 no.5
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    • pp.35-41
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    • 2008
  • This paper presents the design method of current-mode signal processing for high speed and low power digital audio signal processing. The digital audio processor requires a digital signal processing such as fast Fourier transform (FFT), which has a problem of large power consumption according to the settled point number and high speed operation. Therefore, a current-mode signal processing with a switched Current (SI) circuit was employed to the digital audio signal processing because a limited battery life should be considered for a low power operation. However, current memory that construct a SI circuit has a problem called clock-feedthrough. In this paper, we examine the connection of dummy MOS that is the common solution of clock-feedthrough and are willing to calculate the relation of width between dummy MOS for a proposal of the design methodology for improvement of current memory. As a result of simulation, in case of that the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the relation of width between switch MOS and dummy MOS is $W_{M4}=1.95W_{M3}+1.2$ for the width of switch MOS is 2~5um, it is $W_{M4}=0.92W_{M3}+6.3$ for the width of switch MOS is 5~10um. Then the defined relation of MOS transistors can be a useful design guidance for a high speed low power digital audio processor.

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Filed Programmable Logic Control and Test Pattern Generation for IoT Multiple Object switch Control (사물인터넷 환경에서 다중 객체 스위치 제어를 위한 프로그래밍 가능한 로직제어 및 테스트 패턴 형성)

  • Kim, Eung-Ju;Jung, Ji-Hak
    • Journal of Internet of Things and Convergence
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    • v.6 no.1
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    • pp.97-102
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    • 2020
  • Multi-Channel Switch ICs for IoT have integrated several solid state structure low ON-resistance bi-directional relay MOS switches with level shifter to drive high voltage and they should be independently controlled by external serialized logic control. These devices are designed for using in applications requiring high-voltage switching control by low-voltage control signals, such as medical ultra-sound imaging, ink-jet printer control, bare board open/short and leakage test system using Kelvin 4-terminal measurement method. This paper describes implementation of analog switch control block and its verification using Field programmable Gate Array (FPGA) test pattern generation. Each block has been implemented using Verilog hardware description language then simulated by Modelsim and prototyped in a FPGA board. Compare to conventional IC, The proposed architecture can be applied to fields where multiple entities need to be controlled simultaneously in the IoT environment and the proposed pattern generation method can be applied to test similar types of ICs.

A 1.8V 50-MS/s 10-bit 0.18-um CMOS Pipelined ADC without SHA

  • Uh, Ji-Hun;Kim, Won-Myung;Kim, Sang-Hun;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.143-146
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    • 2011
  • A 50-MS/s 10-bit pipelined ADC with 1.2Vpp differential input range is proposed in this paper. The designed pipelined ADC consists of eight stage of 1.5bit/stage, one stage of 2bit/stage, digital error correction block, bias & reference driver, and clock generator. 1.5bit/stage is consists of sub-ADC, DAC and gain stage, Specially, a sample-and hold amplifier (SHA) is removed in the designed pipelined ADC to reduce the hardware and power consumption. Also, the proposed bootstrapped switch improves the Linearity of the input analog switch and the dynamic performance of the total ADC. The reference voltage was driven by using the on-chip reference driver without external reference. The proposed pipelined ADC was designed by using a 0.18um 1-poly 5-metal CMOS process with 1.8V supply. The total area including the power decoupling capacitor and power consumption are $0.95mm^2$ and 60mW, respectively. Also, the simulation result shows the ENOB of 9.3-bit at the Nyquist sampling rate.

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Performance Evaluation of a Next Generation European Digital Terrestrial Television Broadcasting System(DVB-T2) (차세대 유럽형 디지털 지상파 방송 시스템 성능 분석)

  • Jeon, Eun-Sung;Seo, Jung-Wook;Kim, Dong-Ku
    • Journal of Advanced Navigation Technology
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    • v.15 no.1
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    • pp.61-68
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    • 2011
  • DVB-T2 system developed by DVB project is the next generation digital terrestrial television broadcasting standard designed for offering HDTV service in a post-Analog Switch Off (AOS) environment. In this paper, the performance of DVB-T2 is evaluated with the help of computer simulation. The bits error rate(BER) performance is studied in both AWGN, Rayleigh, Ricean and 0db-echo channel. Firstly, we will give a brief introduction to DVB-T2 system and then compare its BER performance to that of Implementation Guideline.

A High Swing Range, High Bandwidth CMOS PGA and ADC for IF QPSK Receiver Using 1.8V Supply

  • Lee, Woo-Yol;Lim, Jong-Chul;Park, Hee-Won;Hong, Kuk-Tae;Lee, Hyeong-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.4
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    • pp.276-281
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    • 2005
  • This paper presents a low voltage operating IF QPSK receiver block which is consisted of programmable gain amplifier (PGA) and analog to digital converter. This PGA has 6 bit control and 250MHz bandwidth, $0{\sim}20\;dB$ gain range. Using the proposed PGA architecture (low distortion gain control switch block), we can process the continuous fully differential $0.2{\sim}2.5Vpp$ input/output range and 44MHz carrier with 2 MHz bandwidth signal at 1.8V supply voltage. Using the sub-sampling technique (input freq. is $44{\sim}46MHz$, sampling freq. is 25MHz), we can process the IF QPSK signal ($44{\sim}46MHz$) which is the output of the 6 bit PGA. We can get the SNDR 35dB, which is the result of PGA and ADC at full gain mode. We fabricated the PGA and ADC and the digital signal processing block of the IF QPSK with the 0.18um CMOS MIM process 1.8V Supply.

A 12-bit 1MS/s SAR ADC with Rail-to-Rail Input Range (Rail-to-Rail의 입력 신호 범위를 가지는 12-bit 1MS/s 축차비교형 아날로그-디지털 변환기)

  • Kim, Doo-Yeoun;Jung, Jae-Jin;Lim, Shin-Il;Kim, Su-Ki
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.2
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    • pp.355-358
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    • 2010
  • As CMOS technology continues to scale down, signal processing is favorably done in the digital domain, which requires Analog-to-Digital (A/D) Converter to be integrated on-chip. This paper presents a design methodology of 12-bit 1-MS/s Rail-to-Rail fully differential SAR ADC using Deep N-well Switch based on binary search algorithm. Proposed A/D Converter has the following architecture and techniques. Firstly, chip size and power consumption is reduced due to split capacitor array architecture and charge recycling method. Secondly, fully differential architecture is used to reduce noise between the digital part and converters. Finally, to reduce the mismatch effect and noise error, the circuit is designed to be available for Rail-to-Rail input range using simple Deep N-well switch. The A/D Converter fabricated in a TSMC 0.18um 1P6M CMOS technology and has a Signal-to-Noise-and-Distortion-Ratio(SNDR) of 69 dB and Free-Dynamic-Range (SFDR) of 73 dB. The occupied active area is $0.6mm^2$.