• ETRI Journal
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• v.26 no.5
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• pp.486-492
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• 2004

The emergence of wide channel bandwidth wireless standards requires the use of a highly linear, wideband integrated CMOS baseband chain with moderate power consumption. In this paper, we present the design of highly linear, wideband active RC filters and a digitally programmable variable gain amplifier. To achieve a high unity gain bandwidth product with moderate power consumption, the feed-forward compensation technique is applied for the design of wideband active RC filters. Measured results from a $0.5{\mu}m$ CMOS prototype baseband chain show a cutoff frequency of 10 MHz, a variable gain range of 33 dB, an in-band IIP3 of 13 dBV, and an input referred noise of 114 ${\mu}Vrms$ while dissipating 20 mW from a 3 V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.448-451
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• 2011

SoC에서 칩 내부의 온도를 측정하기 위한 proportional-to-absolute-temperature (PTAT) 회로와 sensing 된 아날로그 신호를 디지털로 변환하기 위해 4-bit analog-to-digital converter (ADC)로 구성된 temperature sensor를 제안한다. CMOS 공정에서 vertical PNP 구조를 이용하여 PTAT 회로가 설계되었다. 온도변화에 둔감한 ADC를 구현하기 위해 아날로그 회로를 최소로 사용하는 successive approximation (SA) ADC가 이용되었다. 4-bit SA ADC는 capacitor DAC와 time-domain 비교기를 이용함으로 전력소모를 최소화하였다. 제안된 temperature sensor는 2.5V $0.25{\mu}m$ 1-poly 9-metal CMOS 공정을 이용하여 설계되었고, $50{\sim}150^{\circ}C$ 온도 범위에서 동작한다. Temperature sensor의 면적과 전력 소모는 각각 $130{\times}390\;um^2$과 868 uW이다.

• ETRI Journal
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• v.31 no.5
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• pp.585-592
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• 2009

This paper presents a method for decoding high minimal distance ($d_{min}$) short codes, termed Cortex codes. These codes are systematic block codes of rate 1/2 and can have higher$d_{min}$ than turbo codes. Despite this characteristic, these codes have been impossible to decode with good performance because, to reach high $d_{min}$, several encoding stages are connected through interleavers. This generates a large number of hidden variables and increases the complexity of the scheduling and initialization. However, the structure of the encoder is well suited for analog decoding. A proof-of-concept Cortex decoder for the (8, 4, 4) Hamming code is implemented in subthreshold 0.25-${\mu}m$ CMOS. It outperforms an equivalent LDPC-like decoder by 1 dB at BER=$10^{-5}$ and is 44 percent smaller and consumes 28 percent less energy per decoded bit.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.205-208
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• 2000

In this paper, a low voltage CMOS analog four-quadrant multiplier using two V-I converters is presented. The proposed V-I converter is composed of the series composite transistor and the low voltage composite transistor. The designed analog four-quadrant multiplier has simulated by HSPICE using 0.25$\mu\textrm{m}$ n-well CMOS process parameters with a 2V supply voltage. Simulation results show that the power dissipation is 1.55㎿, the cutoff frequency is 489MHz, and the THD can be 0.26％ at maximum differential input of 1V$\sub$p-p/.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.139-144
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• 2003

We report the results of extensive mixed mode simulations and theoretical analysis to quantify the contribution of the edge direct tunneling (EDT) current on the total gate leakage current of 80nm NMOSFET with SiO2 gate dielectric. It is shown that EDT has a profound impact on basic analog circuit building blocks such as sample-hold (S/H) circuit and the current mirror circuit. A transistor design methodology with zero gate-source/drain overlap is proposed to mitigate the EDT effect. This results in lower voltage droop in S/H application and better current matching in current mirror application. It is demonstrated that decreasing the overlap length also improves the basic analog circuit performance metrics of the transistor. The transistor with zero gate-source/drain overlap, results in better transconductance, input resistance, output resistance, intrinsic gain and unity gain transition frequency.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.3
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• pp.260-264
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• 2008

In this paper, a dual mode baseband analog channel selection filter is described which is designed for the Bluetooth and WCDMA wireless communications. Using the presented current-mode integrator, a dual mode channel selection filter is designed. To verify the current-mode integrator circuit, Hspice simulation using 1.8V Hynix $0.18{\mu}m$ standard CMOS technology was performed and achieved $50.0{\sim}4.3dB$ gain, $2.29{\sim}10.3MHz$ unity gain frequency. The described third-order dual mode analog channel selection filter is composed of the current-mode integrator, and used SFG(Signal Flow Graph) method. The simulated results show 0.51, 2.40MHz cutoff frequency which is suitable for the Bluetooth and WCDMA baseband block each.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.309-317
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• 2011

This paper describes a baseband analog (BBA) chain for wireless local area network (WLAN) applications. For the given specifications of the receiver BBA chain, the optimum allocation of the gain and filter rejection of each block in a BBA chain is achieved to maximize the SFDR. The fully integrated BBA chain is fabricated in 0.13 ${\mu}m$ CMOS technology. An input-referred third-order intercept point (IIP3) of 22.9 dBm at a gain of 0.5 dB and an input-referred noise voltage (IRN) of 32.2 nV/${\surd}$Hz at a gain of 63.3 dB are obtained. By optimizing the allocation of the gain and filter rejection using the proposed design methodology, an excellent SFDR performance of 63.9 dB is achieved with a power consumption of 12 mW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.129-134
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• 2014

This paper presents a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) which consists of a digital-to-analog converter (DAC), a SAR logic, and a comparator. The designed asynchronous SAR ADC with a rail-to-rail input range uses a binary weighted DAC using metal-oxide-metal (MOM) capacitor to improve sampling rate. The proposed 10-bit 10-MS/s asynchronous SAR ADC is fabricated using a 0.18-${\mu}m$ CMOS process and its active area is $0.103mm^2$. The power consumption is 0.37 mW when the voltage of supply is 1.1 V. The measured SNDR are 54.19 dB and 51.59 dB at the analog input frequency of 101.12 kHz and 5.12 MHz, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1753-1758
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• 2012

This paper introduces analog FIR filters based on a distributed amplifier and analyzes the proposed filter's characteristics. A simple design method of an analog FIR filter based on the digital filter design technique is also introduced. The proposed analog FIR filters are a moving average(MA) and a comb type filters with no multiplier. This simple structures of the proposed filters may enable to operate at multi-GHz frequency range and applicable to combine a filter and an amplifier of RF system. The proposed analog FIR filters were implemented with standard $0.18{\mu}m$ CMOS technology. The designed GHz analog FIR filters are simulated by Cadence Spectre and compared to the results of digital FIR filters obtained from MATLAB simulations. From the simulation results, the characteristics of the proposed analog FIR filters are fairly well matched with those of digital FIR filters.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.1
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• pp.19-29
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• 2003

This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.