• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.38-48
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• 2014

In this paper, a design of Signal Processing Analog Front-End IC for Automotive Piezo-Resistive Type Pressure Sensor is presented. In modern society, as the car turns to go from mechanical to electronic technology, the accuracy and reliability of electronic parts required importantly. In order to improve these points, Programmable Gain Amplifier (PGA) amplifies the received signal in accordance with gain for increasing the accuracy after PRT Sensor is operated to change physical pressure signals to electrical signals. The signal amplified from PGA is processed by Digital blocks like ADC, CMC and DAC. After going through this process, it is possible to determine the electrical signal to physical pressure signal. As processing analog signal to digital signal, reliability and accuracy in Analog Front-End IC is increased. The current consumption of IC is 5.32mA. The die area of the fabricated IC is $1.94mm{\times}1.94mm$.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.231-234
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• 2002

A transceiver for ADSL systems contains an interpolated combfilter, halfband filters, oversampling sigma delta modulator, a current steering DAC and an analog filler. The circuit complexity of the architecture makes it necessary to use behavioral models to determine the system features. For this reason, we need a specific behavioral simulation environment using the Matlab program. The Matlab is crucial for these circuits to be rapidly incorporated in larger systems, in particular in the context of mixed-signal-test schemes. Design trade-off among the blocks has also been discussed. The design methodology is based on behavioral design and CMOS process.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.497-500
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• 2005

This paper presents a design of a hybrid sensor chip which integrates an A/D converter module and a phase measurement module for measuring power line phase. Recursive sliding DFT based phase measurement module is designed using time shared multiplier which can reduce the size of SoC implementation. A/D converter is based on the sigma delta modulation in order to minimize the implementation space of the analog part and designed to obtain 8-bit resolution. Computer simulations and FPGA implementation are performed to verify hybrid sensor chip design. The hybrid sensor chip for 4-channel power line phase measurement is fabricated by using 0.35 micrometer CMOS process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.249-256
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• 2009

As a wireless handset deals with multiple application standards concurrently, RF transmitters and power amplifiers are required to be more power efficient and reconfigurable. In this paper, we review the recent advances in the design of the power amplifiers and transmitters. Then, the systematic design approaches to improve the performance with the digital baseband signal processing are introduced for the next generation mobile handset.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.3
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• pp.186-192
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• 1996

A modified learning rule is introduced for the implementation of feedforward artificial neural networks with on-chip learning circuitry using standard analog CMOS technology. Learning rule, is modified form the EBP (error back propagation) rule which is one of the well-known learning rules for the feedforward rtificial neural nets(FANNs). The employed MEBP ( modified EBP) rule is well - suited for the hardware implementation of FANNs with on-chip learning rule. As a ynapse circuit, a four-quadrant vector-product linear multiplier is employed, whose input/output signals are given with voltage units. Two $2{\times}2{\times}1$ FANNs are implemented with the learning circuitry. The implemented FANN circuits have been simulatied with learning test patterns using the PSPICE circuit simulator and their results show correct learning functions.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2007.04a
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• pp.485-488
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• 2007

최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

• The Journal of the Acoustical Society of Korea
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• v.17 no.7
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• pp.74-78
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• 1998

본 논문에서는 고속의 변환속도를 갖는 파이프라인드 방식과 저전력 특성을 갖는 축차 비교 방식 구조를 혼용하여 고속, 저전력 아날로그-디지털 변환기를 설계하였다. 제안 된 구조는 축차 비교 방식의 변환에서 비교기를 파이프라인드 구조로 연결하여 홀드된 주기 에 비교기의 기준 전위를 전 비교기의 출력값에 의해 변환하도록 하여 고속 동작이 가능하 도록 하였다. 제안된 구조에 의해 8비트 아날로그 디지털 변환기를 0.8㎛ CMOS공정으로 HSPICE를 이용하여 시뮬레이션한 결과, INL/DNL은 각각 ±0.5/±1이었으며, 100kHz 사인 입력 신호를 10MS/s로 샘플링 하여 DFT측정 결과 SNR은 41dB를 얻을 수 있었다. 10MS/s의 변환 속도에서 전력 소모는 4.14mW로 측정되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.686-689
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• 2014

Electrostatic discharge has been considered as a major reliability problem in the semiconductor industry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PAD must be designed with a protection circuitry that creates a low impedance discharge path for ESD current. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuit with latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD (bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuit is measured. In the result, the proposed ESD protection circuit has latch-up immunity and high robustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristic can be applied to analog integrated circuits.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.304-307
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• 2013

Reverse engineering of semiconductor devices utilizes delayering processes, in order to identify how the interconnection lines are stacked over transistor gates. Cu metal has been used in recent fabrication technologies, and de-processes becomes more difficult with the shrinking device dimensions. In this article, reverse engineering technologies to reveal the Cu interconnection lines and Cu via-plugs embedded in dielectric layers are investigated. Stacked dielectric layers are removed by $CF_4$ plasma etching, then the exposed planar Cu metal lines and via-plugs are selectively delineated by wet chemical solution, instead of the commonly used plasma-based dry etch. As a result, we have been successful in extracting the layouts of multiple layers within a system IC, and this technique can be applicable to other logic IC, analog IC, and CMOS IC, etc.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.606-608
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• 2006

This paper describes a 8bit 10MS/s low power pipelined analog-to-digital converter(ADC). To reduce power consumption in proposed ADC, a high gain op-amp that consumes large power in MDAC(multiplying DAC) of conventional pipelined ADC is replaced with simple comparator and current sources. Moreover, differential charge transfer amplifier technique with latch in the sub-ADC reduces the power consumption to less than half compared with the conventional sub-ADC which use high speed comparator. The proposed ADC shows the power consumption of 1.8mW at supply voltage of 1.8V. This proposed ADC is suitable to apply to the portable display device. The circuit was implemented with 0.18um CMOS technology and the core size of circuit is 2.5mm${\times}$1mm.