• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.1876-1878
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• 1998

For an analysis and simulation of the conducted EMI of switching converters, an accurate simulation model for MOSFET is needed. This paper presents a new modeling approach, which incorporates DC output characteristics and AC dynamics especially the parasitic capacitances. It uses Pspice ABM(Analog Behavioral Model) and the MOSFET parameters can be obtained from the Data sheet in the frequency range of interest for EMI analysis. The model verified with an experimental setup and the EMI for a test converter is analyzed with respect to the MOSFET switching waveforms.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권3호
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• pp.122-129
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• 2001

Exact simulation of conducted EMI in switched mode power supplies is proposed. In order to achieve exact simulation, PSPICE active component ABM model and modified transformer model are proposed. Each model parameter is extracted from measurements and data-books. PSPICE simulation results with high frequency PCB pattern model are accordant with EMI measurements for a 50[W] isolated flyback converter. EMI relations of each component and EMI patterns are analyzed.