• Title/Summary/Keyword: Analog Behavioral Model(ABM)

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Pspice ABM MOSFET Model for Conducted EMI Analysis (전도 전자파 장애 분석을 위한 Pspice ABM MOSFET 모델)

  • Lee, J.H.;Lee, D.Y.;Cho, B.H.
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.1876-1878
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    • 1998
  • For an analysis and simulation of the conducted EMI of switching converters, an accurate simulation model for MOSFET is needed. This paper presents a new modeling approach, which incorporates DC output characteristics and AC dynamics especially the parasitic capacitances. It uses Pspice ABM(Analog Behavioral Model) and the MOSFET parameters can be obtained from the Data sheet in the frequency range of interest for EMI analysis. The model verified with an experimental setup and the EMI for a test converter is analyzed with respect to the MOSFET switching waveforms.

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Simulation &Analysis of Conducted EMI in Switched Mode Power Supplies (스위치 모드 파워 서플라이에서의 전도 전자파 장애의 시뮬레이션과 분석)

  • Lee, Dong-Young;Lee, Jae-Ho;Min, Seung-Hyeon;Cho, Bo-Hyung
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.3
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    • pp.122-129
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    • 2001
  • Exact simulation of conducted EMI in switched mode power supplies is proposed. In order to achieve exact simulation, PSPICE active component ABM model and modified transformer model are proposed. Each model parameter is extracted from measurements and data-books. PSPICE simulation results with high frequency PCB pattern model are accordant with EMI measurements for a 50[W] isolated flyback converter. EMI relations of each component and EMI patterns are analyzed.

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