• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.473-474
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• 2006

We report on the rapid thermal annealing effect on the electrical, optical, and structural properties of IZO transparent conducting oxide films grown by box cathode sputtering (BCS). To investigate structural properties of rapid thermal annealed IZO films in $N_2$ atmosphere as a function of annealing temperature, syncrotron x-ray scattering experiment was carried out. It was shown that the amorphous structure of the IZO films was maintained until $400^{\circ}C$ because ZnO and $In_2O_3$ are immiscible and must undergo phase separation to allow crystallization. In addition, the IZO films grown at different Ar/$O_2$ ratio of 30/1.5 and 30/0 showed different preferred (222) and (440) orientation, respectively, with increase of rapid thermal annealing temperature. The electrical properties of the OLED with rapid thermal annealed IZO anode was degraded as rapid thermal annealing temperature of IZO increased. This indicates the amorphous IZO anode is more beneficial to make high-quality OLEDs.

• Applied Chemistry for Engineering
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• 제19권3호
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

• Journal of Information Display
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• 제9권4호
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• pp.21-29
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• 2008

We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.

• Proceedings of the KIEE Conference
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1518-1520
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• 2000

Amorphous $MnO_{2}{\cdot}nH_{2}O$ in 1M KOH aqueous electrolyte proves to be an excellent electrode for a faradic electrochemical capacitor cycled between -0.5 and +1.0 versus Ag/AgCl. The effect of thermal treatment on the crystalinity, particle structure, and corresponding electrochemical properties of the resulting xerogel remained amorphous as Mn(OH)2 up to 160$^{\circ}C$. With an increase in the temperature above 200$^{\circ}C$, both the surface area and pore volume decreased sharply, because the amorphous Mn(OH)2 decomposed to form MnO that was subsequently oxidized to form crystalline Mn3O4. In addition, the changes in the crystallinity, and particle structure all had significant but coupled effects on the electrochemical properties of the xerogels. A maximum capacitance of 160.6F/g was obtained for an electrode prepared with the MnOx Xerogel calcined at 150$^{\circ}C$, which was consistent with the maxima exhibited in both the surface area and pore volume. This capacitance was attributed solely to a surface redox mechanism.

• Journal of the Mineralogical Society of Korea
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• 제21권3호
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• pp.321-329
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• 2008

Amorphous silica nanoparticles are among the most fundamental $SiO_2$ compounds, having implications in diverse geological processes and technological applications. Here, we explore structural details of amorphous silica nanoparticles with varying particle sizes (7 and 14 nm) using $^{29}Si$ and $^{1}H$ MAS NMR spectroscopy together with quantum chemical calculations to have better prospect for their size-dependent atomic structures. $^{29}Si$ MAS NMR spectra at 9.4 T resolve $Q^2,\;Q^3$ and $Q^4$ species at -93 ppm, -101 ppm, -110 ppm, respectively. The fractions of $Q^2,\;Q^3,\;O^4$ species are $7{\pm}1%,\;27{\pm}2%$, and $66{\pm}2%$ for 7 nm amorphous silica nanoparticles and $6{\pm}1%,\;21{\pm}2%$, and $73{\pm}2%$ for 14 nm amorphous silica nanoparticles. Whereas it has been suggested that $Q^2$ and $Q^3$ species exist on particles surfaces, the difference in $Q^{2}\;+\;Q^{3}$ fraction in both 7 and 14 nm particles is not significant, suggesting that $Q^2$ and $Q^3$ species could exist inside particles. $^{1}H$ MAS NMR spectra at 11.7 T shows diverse hydrogen environments, including physisorbed water, hydrogen bonded silanol, and non-hydrogen bonded silanol with varying hydrogen bond strength. The hydrogen contents in the 7nm silica nanoparticles (including water and hydroxyl groups) are about 3 times of that of 14 nm particles. The larger chemical shills for proton environments in the former suggest stronger hydrogen bond strength. The fractions of non-hydrogen bonded silanols in the 14 nm amorphous silica nanoparticles are larger than those in 7 nm amorphous silica nanoparticles. This observation suggests closer proximity among hydrogen atoms in the nanoparticles with smaller diameter. The current results with high-resolution solid-state NMR reveal previously unknown structural details in amorphous silica nanoparticles with particle size.

• Korean Journal of Soil Science and Fertilizer
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• 제16권2호
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• pp.168-178
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• 1983

Influence of several dehydration treatments on original structure and water behavior in the process of drying were investigated employing three hawaiian volcanic ash soils and four synthetic minerals. These three soils were developed under different rainfall condition and contained three different amount of amorphous materials in them. Measurement of water losses by oven drying at $105^{\circ}C$, $P_2O_5$ drying, freeze drying, and critical point drying revealed that more water losses were noted by oven drying than by three other drying techniques and the differences of water losses between oven and $P_2O_5$-drying were closely related to amoun: of amorphous materials in them, showing the order of Kaiwiki > Hilo > Kawaihae. This indicates that dehydration of amorphous materials by elevated temperature ($105^{\circ}C$) excluded water beyond that in the adsorbed (hygroscopic) state. The effect of dehydration treatments on initial structure was visualized by scanning electron microscopy. The micrographs showed that oven-and $P_2O_5$-dried samples formed into large mass of sub-angular blocky, dense, and closed crumbs, while the freeze dried and critical point dried samples resulted in less shrinkage, and small, fluffy and open spongy structure. However, critical point drying technique produced bulkier, softer, and greater open structure samples than even freeze drying. Additional Index Words: original structure, synthetic minerals, critical point drying, $P_2O_5$ drying. 1. This is a part of author's Ph.D. dissertation submitted to the University of Hawaii, Honolulu, Hawaii 96822 in 1979. 2. Professor of Agricultural Chemistry, Korea University.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제20권6호
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• Korean Journal of Materials Research
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• 제4권4호
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• pp.416-427
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• 1994

The changes of crystallinity and microstructure and the $Si_{1-x}Ge_x/Sio_2$ interfaces of $Si_{1-x}Ge_x$ alloys deposited on amorphous $SiO_{2}$ were studied as a function of deposition temperature. The crystallinity, microstructure, and compositional uniformity of $Si_{1-x}Ge_x$ alloys deposited on the SiOl at different temperature were investigated by X-ray diffraction and transmission electron microscopy. And $Si_{1-x}Ge_x/Sio_2$ interface were investigated by high-resolution transmission electron microscopy. The $Si_{0.7}Ge_{0.3}/Sio_2$ films were deposited on amorphous $SiO_{2}$ at $300^{\circ}C,400^{\circ}C,500^{\circ}C,600^{\circ}C,$ and $700^{\circ}C$ by Si-MBE. In the film deposited at $300^{\circ}C$, only amorphous phase were observed. In the film deposited at $400^{\circ}C$, both amorphous and polycrystalline films were observed. Both phases were deposited simultaneously, but, at initial film growth, amorphous phase prevailed over polycrystalline phase. As the film thickness increased, the fraction of polycrystalline phase increased. At $500^{\circ}C$, thin amorphous layer was observed at lOnm from $SiO_{2}$ surface. In the films deposited at higher than $600^{\circ}C$, only crystalline phase were observed. Polycrystalline films had columnar structure. Compositional uniformity for deposited films were good regardless of deposition temperature. The interfaces of $Si_{1-x}Ge_x/Sio_2$ were flat, whatever polycrystal or amorphous was deposited on $SiO_{2}$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.385-388
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• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• Journal of the Korean Chemical Society
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• 제34권5호
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• pp.413-417
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• 1990

The structural variation process of amorphous SiO$_2$ gel upon heat-treatment conditions of 80, 250, 450 and 1000$^{\circ}C$ has been studied by using the radial distribution functions (RDF$_{obs}$) estimated from the X-ray diffraction intensities. The expected gel structure was determined by comparing the RDF$_{obs}$ with those for the other six standard samples selected appropriately. The structure of specimens prepared by sol-gel method is well consistent with that of fused SiO$_2$ (${\beta}$-cristobalite with cubic symmetry) except a slight difference in O-O band distance.