• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.160-165
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• 2001

The effects of various metals on Field Aided Lateral Crystallization (FALC) behaviors of amorphous silicon (a-Si) were investigated. Under an influence of electric field, metals such s Cu, Ni and Co were found to fasten the lateral crystallization toward a metal-free region, exhibiting a typical FALC behavior while the lateral crystallization of a-Si was not obvious for Pd. However, Au, Al and Cr did not induce the lateral crystallization of a-Si in metal-free region. Such phenomenological differences in various metals were studied in terms of dominant diffusing species (DDS) in the reaction between metal and Si. It was judged that the applied electric field enhanced the crystallization velocity by accelerating the diffusion of metal atoms since the occurrence of lateral crystallization would be strongly dependent on the diffusion of metal atoms than that of Si atoms. Therefore, it was concluded that he only metal-dominant diffusing species in the reaction between metal and Si results in the crystallization of a-Si in metal-free region.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1297-1300
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• 2008

Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

• Journal of Information Display
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• v.6 no.1
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• pp.12-16
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• 2005

Gate and data drivers are essential for driving active matrix display. In this study, we integrate drivers with a-Si:H to develop a compact, better reliability and cost effective display. We design and fabricate drivers with conventional a-Si:H thin film transistors (TFTs). The output voltages are investigated according to the input voltage, temperature and operation time. Based on these studies, we propose here a new driver to prevent gate line from the floated state. For the external coupled voltage fluctuation, the proposed driver shows better stability.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.127-130
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• 1989

This paper reports the theoretical model and the experimental results regarding to the electrical conductivity of hydrogenated amorphous silicon (a-Si:H). The total effective conductance of a-Si:H with a planar structure has been considered as the sum of the conductance of an adsorbate-induced layer, a surface-interface layer, a bulk layer, and a substrate-interface layer. In order to investigate the effects of space charge layers in a-Si:H on the conductivity, the thickness dependence of the conductivity is characterized and the conductivities measured at the upper electrodes deposited on a-Si:H are compared with those measured at the lower electrodes deposited on the glass substrate. From our analysis, the bulk conductivity and the thickness of the space charge layer in a-Si:H are characterized quantitatively.

• Laser Solutions
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• v.6 no.2
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.130-136
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• 2010

The microbolometer array sensor with fine pitch pixel array has been implemented to the released amorphous silicon layer supported by two contact pads. For the design of focal plane mirror with geometrical flatness, the simple beam test structures were fabricated and characterized. As the beam length decreased, the effect of beam width on the bending was minimized, Mirror deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The mirror tilting was caused by the mis-align effect of contact pad and confirmed by FEA simulation results. The properties of bolometer have been measured as such that the NETD 145 mK, the TCR -2 %/K, and thermal time constant 1.99 ms.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.3-6
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• 1992

A new analytical expression for the saturated I-V characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT) is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled. The model is based on three functions obtained from the experimental data of $I_D$ versus $V_G$. Theoretical results confirm the simple form of the model in terms of the device geometry. It was determined that the saturated drain current increased at a fixed gate voltage and the device saturated at increasingly larger drain voltages while the threshold voltages decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.548-551
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• 2002

The crystallization of amorphous silicon (a-Si) was achieved using a field aided lateral crystallization (FALC) process at 350 $^{\circ}C$. Under the influence of an electric field, Cu is found to drastically enhance the lateral crystallization velocity of a-Si. When an electric field was applied to the selectively Cu-deposited a-Si film during the heat treatment at temperature as low as 350 $^{\circ}C$, dendrite-shaped crystallization of a-Si progressed toward Cu-free region and the crystallization from negative electrode side toward positive electrode side was accelerated. We identified that 1000${\AA}$ thick a-Si film was completely crystallized by Cu-FALC process at 350 $^{\circ}C$ by TEM analysis.