• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.193-194
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• 2018

Common transistor has unipolar characteristics in accordance with the doping carriers and operation by the threshold voltage, which is related to the stability. It is required the low threshold voltage of transistors to increase the stability of devices. The sensing ability is about the detection of how low current, therefore there is difference between the low current and leakage current. This study researched the ambipolar characteristics of transistors with very low currents to define the difference between common n-type transistors with unipolar properties.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.130-136
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• 1989

Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

• 전기의세계
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• v.16 no.4
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• pp.6-10
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• 1967

The deionization behavior in plasma during arc discharge of mercury arc rectifier depends on ambipolar diffusion. It is shown here in the quantitative analysis that a diameter of arc path which affects the mercury arc rectifier characteristics is related with the density of charged particles in plasma, the particle number of extruguish ion, the deionizing time and the recovering time of grid controlled ability. The conclusion would he useful for designing a diameter of arc path of mercury arc rectifier by quantitative method. And it could be applied to the designing of electrical apparatus using arc discharge phenomena.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1165-1168
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• 2005

We review discharge characteristics of fluorescent lamps having noncircular cross sections. The developmental and theoretical history of noncircular cross-section lamps is summarized chronologically. In particular, discharge characteristics of noncircular cross-section lamps will be summarized and analyzed including plasma contraction, electron temperature, and ambipolar diffusion loss, which might give us some insights into the way to develop more efficient and uniform flat fluorescent lamps, which have recently arisen as a new light source of large-size backlight units for LCD TV applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.214-214
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• 2003

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.9-19
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• 2002

By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.90-99
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• 1999

In this work, we consider the effect of the presheath on the ion angular distribution. The recent shows the ion-neutral collision in the presheath and the calculated energy flux with the ion angular distribution at the presheath edge in plasma reactor. We also propose a new approximation analytical model for the ion angular distribution and the energy flux distribution with ion temperature. The ion passing the presheath region, Shows a ion scattering effect without ion-neutral collisions. This because the kinetic energy by the ambipolar diffusion field is changed by the gas collision,. Using the proposed approximation analytical model, we show the simulated results of a deposit profile on variable trench shape.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.141-146
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• 2017

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.273.1-273.1
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• 2016

Graphene exhibits a number of unique properties that make it an intriguing candidate for use in sensor. Here, we report graphene-based gas sensor. Graphene was grown using CVD. Then, the sensor was made using standard lithography techniques. The sensor conductance increased upon exposure to NH3, whereas it decreased upon NO2, suggesting that NH3 and NO2 might be discriminated using the graphene-based sensor. To improve the sensitivity, graphene was treated with hydrogen plasma. After hydrogen treatment, the electrical properties of graphene changed from ambipolar to p-type semiconductors. In addition, the sensor performance was improved probably due to an opening of bandgap.