JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

  • Lee, Ryoongbin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Kwon, Dae Woong (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Kim, Sihyun (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Kim, Dae Hwan (School of Electrical Engineering, Kookmin University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
  • Received : 2016.05.23
  • Accepted : 2016.11.01
  • Published : 2017.02.28
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Abstract

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

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References

  1. Z. Li, Y. Chen et al., "Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires", Nano Letters, vol. 4, no. 2, pp. 245-247, Jan. 2004. https://doi.org/10.1021/nl034958e
  2. M. M. -C. Cheng et al., "Nanotechnologies for biomolecular detection and medical diagnostics", Curr. Opin. Chem. Biol., vol.10, no. 1, pp. 11-19, Feb. 2006. https://doi.org/10.1016/j.cbpa.2006.01.006
  3. I. Park et al., "Top-down fabricated silicon nanowire sensors for real-time chemical detection", Nanotechnology., vol.21, no. 1, p. 010551, Nov. 2009.
  4. E. Stern et al., "Label-free immunodetection with CMOS-compatible semiconducting nanowires", Nature., vol.445, no. 7127, pp. 519-522, Feb. 2007. https://doi.org/10.1038/nature05498
  5. A. Kim et al., "Ultrasensitive, label-free, and realtime immunodetection using silicon field-effect transistors", Appl. Phys. Lett.., vol. 91, no. 10, p. 103901, Sep. 2007. https://doi.org/10.1063/1.2779965
  6. P. Ginet et al, "CMOS-compatible fabrication of top-gated field-effect transistor silicon nanowirebased biosensors," J. Micromech. Microeng. vol. 21, no. 6, p. 065008, May. 2011. https://doi.org/10.1088/0960-1317/21/6/065008
  7. J. Lee et al., "A Novel SiNW/CMOS Hybrid Biosensor for High Sensitivity/Low Noise", in IEDM Tech. Dig., 2013, pp. 385-388..
  8. J. Lee et al., "Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output", IEEE Electron Device Lett., vol.33, no. 12, pp. 1768-1770, Dec. 2012. https://doi.org/10.1109/LED.2012.2220515
  9. W. Y. Choi et al.,"Tunneling field-effect transistor (TFET) with subthreshold swing (SS) less than 60mV/dec," IEEE Electron Device Lett., vol. 28, no.8, pp. 743-745, Aug. 2007. https://doi.org/10.1109/LED.2007.901273
  10. U. E. Avci et al., "Comparison of Performance, Switching Energy and Process Variations for the TFET and MOSFET in Logic", In VLSI Symp. Tech. Dig., 2011, pp. 124-125.
  11. J. Lee et al., "Implementation and Characterization of Gate-Induced Drain Leakage Current-Based Multiplexed SiNW Biosensor", In The 20th Korean Conference on Semiconductors., 2013.
  12. R. A. Chapman et al., "Comparison of Methods to Bias Fully Depleted SOI-Based MOSFET Nanoribbon pH Sensors", IEEE Trans. Electron Devices., vol. 58, no. 6, pp. 1752-1760, Jun. 2011. https://doi.org/10.1109/TED.2011.2132134
  13. B. Choi et al., "TCAD-Based Simulation Method for the Electrolye-Insulator-Semiconductor Field-Effect Transistor", IEEE Trans. Electron Devices., vol. 62, no. 3, pp. 1072-1075, Mar. 2015. https://doi.org/10.1109/TED.2015.2395875
  14. J. Lee et al., "SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor", IEEE Electron Device Lett., vol. 34, no. 1, pp. 135-137, Jan. 2013. https://doi.org/10.1109/LED.2012.2226136

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