• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.44-48
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• 2009

The effect of temperature gradient between the substrate and ambient gas on the structural characteristics of GaN nanorods grown on r-plane sapphire substrates by hydride vapor phase epitaxy was investigated. The density, diameter, and length strongly depended on the tempearture gradient. In addition, the cross-sectional shape of the nanorrods at the end of growth was found to be more dependedent on the temperature of a substrate itself than the temperature gradient.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.2
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• pp.63.1-63.1
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• 2013

We present the results of time monitoring observations of $^{28}SiO$ v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward radio Source I in Orion KL. The observations have been performed from 2009 June to 2013 April using the 21m single dish radio telescopes of the Korean VLBI Network. Both SiO and $H_2O$ maser lines were simultaneously obtained at 20 epochs. In particular, the third outburst of $H_2O$ maser emission (the first: 1985, the second: 1998) was detected and the flux density variation curve was obtained. The maximum flux density flared up to an order of $10^5$ Jy during 2012 May-July at peak velocity of 7.33 km $s^{-1}$. Hirota et al. (2011) reported that the bursting maser features are located at 8" from Source I and coincident with the interacting region between the outflow from Source I and a dense ambient gas, Orion Compact Ridge. In the case of SiO masers arising from close to the Source I, the peak emission of the v = 1, J = 1-0 maser line appeared in 2010 April. We are investigating the possible relation between this SiO maser peak emission and the third $H_2O$ maser flaring.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.99-103
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• 2009

HBr and $O_2$ in $Cl_2$ gas ambient for the high density plasma gate etching has been used to increase the performance of gate electrode in semiconductor devices. When an un-doped amorphous silicon layer was used for a gate electrode material, the notching profile was observed at the outer sidewall foot of the outermost line. This phenomenon can be explained by the electron shading effect: i.e., electrons are captured at the photoresist sidewall while ions pass through the photoresist sidewall and reach the oxide surface at a narrowly spaced pattern during the over etch step. The potential distribution between gate lines deflects the ions trajectory toward the gate sidewall. In this study, an appropriate mechanism was proposed to explain the occurrence of notching in the gate electrode of un-doped amorphous silicon.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Analytical Science and Technology
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• v.26 no.4
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• pp.235-244
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• 2013

Detection of halogens using laser-induced breakdown spectroscopy (LIBS) in open air is very difficult since their strong atomic emission lines are located in VUV region. In NIR region, there are other emission lines of halogens through electronic transitions between excited states. However, these lines undergo Stark broadening severely. We report the observation of the emission lines of halogens in laser-induced plasma (LIP) spectra in NIR region using a helium gas flow. Particularly, the emission lines of iodine at 804.374 and 905.833 nm from LIPs have been observed for the first time. In the helium ambient gas, Stark broadening of the emission lines and background continuum emission could be suppressed significantly. Variations of the line intensity, plasma temperature, and electron density with the helium flow rate was investigated. Detection of chlorine and bromine in flame retardant of rubbers was demonstrated using this method. Finally, we suggest a pulsed helium gas jet as a practical and ecomonical helium gas source for the LIBS analysis of halogens in open air.

• Korean Journal of Food Science and Technology
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• v.35 no.1
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• pp.149-154
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• 2003

Changes in mineral (Ca, Mg) contents and pectic substances of mature-green 'Nanko' Mume fruits hermetically packaged in 0.03 mm low density polyethylene (LDPE) films with and without gas absorbents were examined during storage at $25^{\circ}C$ for 10 days. Each packaging contained 10 g $Ca(OH)_2$ as a carbon dioxide scavenger, 30 g $KMnO_4$ as an ethylene scrubber or their mixture. In the presence of the ethylene scrubber, losses in mineral contents of alcohol insoluble solids and water soluble pectin were remarkably suppressed, whereas no significant difference was observed in the Ca content between the fresh fruit and those stored for 10 days. Fruits packaged with the ethylene absorbent retained higher amount of pectic substances than those with other packaging treatments. Degradation of the pectic substances into small molecules was also noticeably reduced when the ethylene scrubber was used. Overall results showed that the combination of the gas permeable film and the ethylene absorbent could be applied to mature-green Mume fruits as an effective packaging method to retard the texture softening during storage at the ambient temperature.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.273-278
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• 2012

Over the last decade, the hafnium-based gate dielectric materials have been studied for many application fields. Because these materials had excellent behaviors for suppressing the quantum-mechanical tunneling through the thinner dielectric layer with higher dielectric constant (high-K) than $SiO_2$ gate oxides. Although high-K materials compensated the deterioration of electrical properties for decreasing the thickness of dielectric layer in MOSFET structure, their nano-mechanical properties of $HfO_2$ thin film features were hardly known. Thus, we examined nano-mechanical properties of the Hafnium oxide ($HfO_2$) thin film in order to optimize the gate dielectric layer. The $HfO_2$ thin films were deposited by rf magnetron sputter using hafnium (99.99%) target according to various oxygen gas flows. After deposition, the $HfO_2$ thin films were annealed after annealing at $400^{\circ}C$, $600^{\circ}C$ and $800^{\circ}C$ for 20 min in nitrogen ambient. From the results, the current density of $HfO_2$ thin film for 8 sccm oxygen gas flow became better performance with increasing annealing temperature. The nano-indenter and Weibull distribution were measured by a quantitative calculation of the thin film stress. The $HfO_2$ thin film after annealing at $400^{\circ}C$ had tensile stress. However, the $HfO_2$ thin film with increasing the annealing temperature up to $800^{\circ}C$ had changed compressive stress. This could be due to the nanocrystal of the $HfO_2$ thin film. In particular, the $HfO_2$ thin film after annealing at $400^{\circ}C$ had lower tensile stress, such as 5.35 GPa for the oxygen gas flow of 4 sccm and 5.54 GPa for the oxygen gas flow of 8 sccm. While the $HfO_2$ thin film after annealing at $800^{\circ}C$ had increased the stress value, such as 9.09 GPa for the oxygen gas flow of 4 sccm and 8.17 GPa for the oxygen gas flow of 8 sccm. From these results, the temperature dependence of stress state of $HfO_2$ thin films were understood.

• Transactions of the Korean Society of Automotive Engineers
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• v.20 no.3
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• pp.88-97
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• 2012

To measure the traffic pollutants with high temporal and spatial resolution under real conditions, a mobile emission laboratory (MEL) was designed. The equipment of the mini-van provides gas phase measurements of CO, NOx, CO2 and THC (Total hydrocarbon), and number density & size distribution measurements of fine and ultra-fine particles by a fast mobility particle sizer (FMPS) and a condensation particle counter (CPC). The inlet sampling port above the bumper enables the chasing of different type of vehicles. This paper introduces the technical details of the MEL and presents data from the experiment in which a MEL chases a city bus fuelled by diesel, DME and Bio-diesel. The dilution ratio was calculated by the ratio of ambient NOx and tail-pipe NOx. Most particles from the bus fuelled by diesel were counted under 300 nm and the peak concentration of the particles was located between 30 and 60 nm. However, most particles in the exhaust of the bus fuelled by DME were nano-particles (diameter: less than 50 nm). The bus fuelled by Bio-diesel shows less particle emissions compare to diesel bus due to the presence of the oxygen in the fuel.

• Corrosion Science and Technology
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• v.9 no.3
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• pp.122-128
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• 2010

The corrosion of the flexible tube in the automobile exhaust system is caused by the ambient water and chloride ions. Since welding is one of the key processes for the flexible tube manufacturing, it is required to select a proper welding method to prevent the flexible tube corrosion and to increase its lifetime. There are many studies about the efficiency of the welding method, but no systematic study is performed for the effect of welding method on the corrosion property of the austenitic stainless weldment. The aim of the present study is to provide information on the effect of two different welding methods of TIGW (tungsten inert gas welding) and PAW (plasma arc welding) on the corrosion property of austenitic stainless steel weldment. Materials used in this study were two types of the commercial austenitic stainless steel, STS321 and XM15J1, which were used for flexible tube material for the automotive exhaust system. Microstructure was observed by using optical microscopy (OM) and scanning electron microscopy (SEM). To evaluate the corrosion behavior, potentiodynamic and potentiostatic tests were performed. The chemical state of the passive film was analyzed in terms of XPS depth profile. Metallurgical analysis show that the ferrite content in fusion zone of both STS321 and XM15J1 is higher when welded by PAW than by TIGW. The potentiodynamic and potentiostatic test results show that both STS321 and XM15J1 have higher transpassive potential and lower passive current density when welded by PAW than by TIGW. XPS analysis indicates that the stable $Cr_2O_3$ layer at the outermost layer of the passive film is formed when welded by PAW. The result recommends that PAW is more desirable than TIGW to secure corrosion resistance of the flex tube which is usually made of austenitic stainless steel.