• 센서학회지
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• 제29권5호
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• 전기전자학회논문지
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• 제24권2호
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• pp.604-609
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• 2020

본 연구에서는 RF 스퍼터를 이용하여 SiC 기판위에 AlN막을 증착하고 급속 열처리 (RTA) 공정의 온도에 따른 AlN/4H-SiC 구조의 전기적, 재료적 특성에 대한 영향을 분석하였다. 400도에서 RTA 공정을 진행한 Ni/AlN/4H-SiC SBD 소자의 온/오프 비율은 RTA 공정 전 그리고 600도에서 RTA 공정을 한 소자에 비해 약 10배정도 높은 값을 가졌다. 또한 오제이 전자현미경을 통한 원자성분 분석을 통해 증착한 AlN 층내의 존재하는 산소의 양이 후열 처리 조건에 따라 변화함을 확인하였고 소자의 온/오프 비율 그리고 온-저항 등 소자의 성능에 영향을 주는 것을 분석하였다. 추가적으로, 제작한 소자의 노출된 음향 주파수에 따른 전기적 특성변화를 분석하였다.

• 한국표면공학회지
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• 제42권3호
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• 한국식품과학회지
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• 제46권6호
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• pp.739-742
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• 2014

이 연구에서는 식품포장분야에 사용되는 유연포장재들의 두께에 따른 방충효과를 규명하여 각각의 포장재에서 일정 수준의 방충효과를 나타내기 위한 필름의 최적의 조건을 연구하고자 하였다. 식품용 유연포장재들 중에서도 가장 널리 이용되고 있는 PE, PP, PS, AF, PET를 채택하여 실험을 진행한 결과, 각 포장재들의 두께에 따른 화랑곡나방 유충에 의한 침투율은 전반적으로 필름의 종류에 관계없이 두께가 얇을수록 포장재 내부로 빠르게 침투하는 경향을 보였다. 특히 PP와 PS의 경우 다른 필름들과는 다르게 각각 $20{\mu}m$와 $30{\mu}m$에서 72시간 이내에 100% 침투되는 결과값을 보여 방충포장소재로서의 상대적인 취약함을 보였다. 결과적으로 필름의 종류에 상관없이 두께가 증가할 수록 화랑곡 나방 유충의 침투율이 낮아진다는 것을 보여 주었다. 따라서 식품 내 해충과 같은 동물성 이물의 혼입을 방지하기 위해서는 포장 소재의 종류에 따라 특정 두께 이상을 확보해야 한다고 판단된다.

• 한국정밀공학회지
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• 제23권6호
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• pp.104-110
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• 2006

A design and control of electrostatic suspension system for flexible objects is presented. A number of electrode pairs of which the number depends on the object flexibility are positioned above the object and the voltages applied to each electrode pair are controlled, independently on the others, on the basis of the gap length. To implement the system with low cost and compactness, switched-voltage control scheme that is based on the relay feedback control is utilized. Relay feedback control method deploys only a single high-voltage power supply that can deliver a DC voltage of positive and/or negative polarity and thus high voltage amplifiers that are costly and bulky are not needed any more. It is shown that despite the inherent limit cycle property of the relay feedback based control, an excellent performance in vibration suppression is attained due to the presence of a relatively large squeeze film damping originating from the electrodes and levitated object. Employing fourteen electrode pairs, a thin aluminum plate with a thickness of 0.1 mm has been suspended at a gap length of 0.75mm.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.285-289
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• 2009

Small RFID tag antenna were fabricated on Si substrate and their physical and electrical properties were evaluated. With decreasing the size of tag antenna on Si substrate, small SMD-type RFID tags could be fabricated, which is very useful for various applications including PCB tracking. Firstly, electromagnetic properties on tag antenna pattern were simulated with HFSS. The setup frequency was 13.56 MHz of HF-band RFID. The line-width and line-gap were modeled in the range of $50{\sim}200{\mu}m$. S parameters, SRF, and Q value were calculated from the model. When the line-width and line-gap were 100 urn and the loop-turn was 10, the SRF was 80 MHz and the Q value was ca. 9. When the microstrip antenna pattern of aluminum was fabricated by using DC sputtering, Vpp of ca. 1.6 V was obtained when the reader-tag distance was 40 mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.510-514
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• 2005

We have investigated the excitation-light source dependence of photo-catalytic efficiency for the benzene removal. The photo-catalytic module for the benzene removal is fabricated by a combination of GaN-based ultraviolet light-emitting diode (UV GaN-LED) and $TiO_2$ thin film coated on an aluminum plate. The benzene reduction rates of 365 nm and 375 nm modules at 60 mA junction current are approximately $8.95\;\%/Hr$ and $9.2\;\%/Hr$, respectively, which indicates that 365 nm GaN-LED is more effective than 375 nm GaN-LED. The benzene reduction efficiency is also noticeably dependent on the excitation wavelength and excitation-light power, as well as it is increased with the shorter wavelength and higher excitation power. This result exhibits that UV GaN-LED is useful to remove the volatile organic compounds (VOCs) existing in the environment.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).