• 전자공학회논문지A
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• 제31A권12호
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• pp.31-37
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• 1994

Aluminum films were deposited by the pyrolysis of triisobutylaluminum(TIBA) in a cold wall LPCVD system for the metallization of high level IC. the selectivity on Si/SiO2 substrate and the contact resistance on submicron contacts were investigated. The carbon free aluminum film could be obtained when the aluminum film was deposited at low substrate temperature. Contact resistances of CVD Al/n+ Si contacts whose contact size was 0.5 .mu.m werre as low as 20~40.OMEGA./ea, which is 30~50% of contact resistance obtained by sputtering technique.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.334-334
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• 2011

We applied N-ion bombardment and heat treatment to the Cu thin films deposited on aluminum oxide layer for the enhancement of adhesion. With e-beam evaporation method. $1,000{\AA}$ thick Cu pre-bombardment layer was deposited on the aluminum oxide surface and then N-ion beam was bombared in order to mix the atoms at the film/substrate interface. Additional $4,000{\AA}$-thick Cu film was the coated. Subsequently, the ion mixide Cu on aluminum oxide was annealed at $200^{\circ}C$ and $300^{\circ}C$ in vacuum.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.593-596
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• 2007

A possibility of manufacturing bendable ac-PDP using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-PDPs using those material system and are expected to expand the applications of plasma display panels.

• 한국진공학회지
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• 제9권3호
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• pp.273-278
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• 2000

본 연구에서는 분자동력학 방법을 사용하여 알루미늄 덩어리 증착에 관하여 연구하였다. 다양한 크기의 덩어리 충돌에서 기판의 온도와 비정렬 원자수 변화를 관찰하여 알루미늄 덩어리 증착시 덩어리내의 원자들 상호간의 상관충돌이 기판으로의 에너지전달과 원자 재배열과정에 큰 영향을 미치는 것을 발견하였다. 덩어리 크기가 클수록 상관충돌 효과는 커지는 것을 알 수 있었다.

• 한국재료학회지
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• 제32권9호
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• pp.361-368
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• 2022

The overall process, from the pre-treatment of aluminum substrates to the eco-friendly neutral electroless Ni-P plating process, was observed, compared, and analysed. To remove the surface oxide layer on the aluminum substrate and aid Ni-P plating, a zincation process was carried out. After the second zincation treatment, it was confirmed that a mostly uniform Zn layer was formed and the surface oxide of aluminum was also removed. The Ni-P electroless plating films were formed on the secondary zincated aluminum substrate using electroless plating solutions of pH 4.5 and neutral pH 7.0, respectively, while changing the plating bath temperature. When a neutral pH7.0 electroless solution was used, the Ni-P plating layer was uniformly formed even at the plating bath temperature of 50 ℃, and the plating speed was remarkably increased as the bath temperature was increased. On the other hand, when a pH 4.5 Ni-P electroless solution was used, a Ni-P plating film was not formed at a plating bath temperature of 50 ℃, and the plating speed was very slow compared to pH 7.0, although plating speed increased with increasing bath temperature. In the P contents, the P concentration of the neutral pH 7.0 Ni-P electroless plating layer was reduced by ~ 42.3 % compared to pH 4.5. Structurally, all of the Ni-P electroless plating layers formed in the pH 4.5 solution and the neutral (pH 7.0) solution had an amorphous crystal structure, as a Ni-P compound, regardless of the plating bath temperature.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

• Journal of Welding and Joining
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• 제26권5호
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• pp.36-42
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• 2008

Carbon nanotube (CNT) aluminum composite coatings were built up through kinetic spraying process. Deposition behavior of CNT aluminum composite on an aluminum 1050 alloy substrate was analyzed based on deposition mechanism of kinetic spraying. The microstructure of CNT aluminum composite coating were observed and analyzed. Also, the electrical resistivity, bond strength and micro-hardness of the CNT aluminum composite coatings were measured and compared to kinetic sprayed aluminum coatings. The CNT aluminum composite coatings have a dense structure with low porosity. Compared to kinetic sprayed aluminum coating, the CNT aluminum composite coatings present lower electrical resistivity and higher micro-hardness due to high electrical conductivity and dispersion hardening effects of CNTs.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• 한국재료학회지
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• 제30권7호
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• pp.350-358
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• 2020

A variety of composite powders having different aluminum and carbon contents are prepared using various organic solvents having different amounts of carbon atoms in unit volume as ball milling agents for titanium and aluminum ball milling. The effects of substrate temperature and post-heat treatment on the texture and hardness of the coating are investigated by spraying with this reduced pressure plasma spray. The aluminum part of the composite powder evaporates during spraying, so that the film aluminum content is 30.9 mass%~37.4 mass% and the carbon content is 0.64 mass%~1.69 mass%. The main constituent phase of the coating formed on the water-cooled substrate is a non-planar α₂ phase, obtained by supersaturated carbon regardless of the alloy composition. When these films are heat-treated at 1123 K, the main constituent phase becomes γ phase, and fine Ti₂AlC precipitates to increase the film hardness. However, when heat treatment is performed at a higher temperature, the hardness is lowered. The main constitutional phase of the coating formed on the preheated substrate is an equilibrium gamma phase, and fine Ti₂AlC precipitates. The hardness of this coating is much higher than the hardness of the coating in the sprayed state formed on the water-cooled substrate. When hot pressing is applied to the coating, the porosity decreases but hardness also decreases because Ti₂AlC grows. The amount of Ti₂AlC in the hot-pressed film is 4.9 vol% to 15.3 vol%, depending on the carbon content of the film.

• 전자공학회논문지A
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• 제31A권12호
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• pp.115-121
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• 1994

Aluminum films were chemically vapor deposited for the metallization of the integrated circuits and the spiking characteristics of the direct CVD Al/Si contacts were investigated. When the aluminum was formed by CVD uniform consumption of the substrate silicon was observed, which is quite different from the phenomena observed in sprttered Al. Silicon consumption occured during the deposition of CVD Al and the erosion depth of the silicon was several hundred $\AA$ when the continuous films were formed on the substrate while much less erosion of the silicon occured when the Al were formed in islands. When the submicron contacts were selectively plugged, contact resistances were very low and the erosion depth of the silicon was trivial.