• 제목/요약/키워드: Aluminum film

검색결과 663건 처리시간 0.022초

SEM/EDX를 이용한 OPC 드럼용 Al 튜브의 표면결함 분석에 관한 연구 (On the Surface Defect Analysis of an Aluminum Tube for an OPC Drum using n SEM and EDX)

  • 김청균
    • Tribology and Lubricants
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    • 제23권4호
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    • pp.143-148
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    • 2007
  • The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

플라즈마 화학증착한 알루미늄 산화박막의 $CCl_4$ 플라즈마에서의 반응성 이온식각 특성 (Reactive Ion Etching Characteristics of Aluminum Oxide Films Prepared by PECVD in $CCl_4$ Dry Etch Plasma)

  • 김재환;김형석;이원종
    • 한국세라믹학회지
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    • 제31권5호
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    • pp.485-490
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    • 1994
  • The reactive ion etching characteristics of aluminum oxide films, prepared by PECVD, were investigated in the CCl4 plasma. The atomic chlorine concentration and the DC self bias were determined at various etching conditions, and their effects on the etch rate of aluminum oxide film were studied. The bombarding energy of incident particles was found to play the more important role in determining the etch rate of aluminum oxide rather than the atomic chlorine concentration. It is considered to be because the bombardment of ions or neutral atoms breaks the strong Al-O bonds of aluminum oxide to help activate the formation reaction of AlCl3 which is the volatile etch product.

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A Review on Dielectric Breakdown of Anodic Oxide Films on Aluminum Alloys

  • Hien Van Pham;Cheolnam Yang;Sungmo Moon
    • 한국표면공학회지
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    • 제57권4호
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    • pp.254-264
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    • 2024
  • This paper reviews the dielectric breakdown resistance and behavior of anodic oxide films in air environment. It begins with a description of the dielectric breakdown mechanisms of dielectric materials. The paper then introduces different types of dielectric materials and compares them in terms of dielectric strength, thermal conductivity, mechanical strength and cost. Next, the paper summarizes various fabrication methods for dielectric aluminum oxide layers, discussing the advantages and disadvantages of each method. Finally, it provides an overview of current studies on the dielectric breakdown properties of anodic aluminum oxide films formed on different aluminum alloys in various electrolytes.

A Study on the properties of aluminum nitride films on the Al7075 deposited by pulsed DC reactive magnetron sputtering

  • Kim, Jung-hyo;Cha, Byung-Chul;Lee, Keun-Hak;Park, Won-Wook
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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    • pp.179-180
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    • 2012
  • Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

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알루미늄 5052 및 6061 합금의 양극산화 표면처리를 통한 발수 특성 및 부식 특성 비교 (Comparison of Hydrophobicity and Corrosion Properties of Aluminum 5052 and 6061 Alloys After Anodized Surface Treatment)

  • 박영주;정찬영
    • Corrosion Science and Technology
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    • 제21권3호
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    • pp.200-208
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    • 2022
  • Aluminum alloy is used by adding various elements according to the needs of the industry. Aluminum alloys such as 5052 and 6061 are known to possess excellent corrosion resistance by adding Mg. Despite their excellent physical properties, corrosion can occur. To solve this problem, an anodization technique generally can improve corrosion resistance by forming an oxide structure with maximized hydrophobic properties through coatings. In this study, the anodizing technique was used to improve the hydrophobicity of aluminum 5052 and 6061 by creating porous nanostructures on top of the surface. An oxide film was formed by applying anodizing voltages of 20, 40, 60, 80, and 100 V to aluminum alloys followed by immersion in 0.1 M phosphoric acid for 30 minutes to expand oxide pores. Contact angle and corrosion characteristics were different according to the structure after anodization. For the 5052 aluminum, the corrosion potential was improved from -363 mV to -154 mV as the contact angle increased from 116° to 136°. For the 6061 aluminum, the corrosion potential improved from -399 mV to -124 mV when the contact angle increased from 116° to 134°.

Use of Capparis decidua Extract as a Green Inhibitor for Pure Aluminum Corrosion in Acidic Media

  • Al-Bataineh, Nezar;Al-Qudah, Mahmoud A.;Abu-Orabi, Sultan;Bataineh, Tareq;Hamaideh, Rasha S.;Al-Momani, Idrees F.;Hijazi, Ahmed K.
    • Corrosion Science and Technology
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    • 제21권1호
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    • pp.9-20
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    • 2022
  • The aim of this paper is to study corrosion inhibition of Aluminum with Capparis decidua extract. The study was performed in a 1.0 M solution of hydrochloric acid (HCl) and was monitored both by measuring mass loss and by using electrochemical and polarization methods. A scanning electron microscopy (SEM) technique was also applied for surface morphology analysis. The results revealed high inhibition efficiency of Capparis decidua extract. Our data also determined that efficiency is governed by temperature and concentration of extract. Optimum (88.2%) inhibitor efficiency was found with maximum extract concentration at 45 o C. The results also showed a slight diminution of aluminum dissolution when the temperature is low. Based on the Langmuir adsorption model, Capparis decidua adsorption on the aluminum surface shows a high regression coefficient value. From the results, the activation enthalpy (∆H#) and activation entropy (∆S#) were estimated and discussed. In conclusion, the study clearly shows that Capparis decidua extract acted against aluminum corrosion in acidic media by forming a protective film on top of the aluminum surface.

Fabrication of Bismuth- and Aluminum-Substituted Dysprosium Iron Garnet Films for Magneto-Optic Recording by Pyrolysis and Their Magnetic and Magneto-Optic Properties

  • Cho, Jae-Kyong
    • The Korean Journal of Ceramics
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    • 제1권2호
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    • pp.91-95
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    • 1995
  • Polycrystalline bismuth- and aluminum- substituted dysporsium and yttrium iron garnet (Bi2R3-xAlyFe5-yO12, R=Dy or Y, $0\leqx\leq3, \; 0\leqy\leq3$) films have been prepared by pyrolysis. The crystallization temperatures, the solubility limit of bismuth ions into the garnet phase, and magnetic and magneto-optic properties of the films have been investigated as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained unchanged at x>1.5, whereas, showed no changes as aluminum concentration (y) increased up to y=1.0 and then gradually increased at y>1.0. The solubility limit of bismuth ions was x=1.8 when y=0 but increased to x=2.3 when y=1.0. It was demonstrated that the magnetic and magneto-optic properties of the dysprosium iron garnet films could be tailored by bismuth and aluminum substitution suitable for magneto-optic recording as follows. The saturation magnetization and coercivity data obtained for the films indicated that the film composition at which the magnetic compensation temperature became room temperature was y=1.2 when x=1.0. Near this composition the coercivity and the squareness of the magnetic hysteresis loop of the films were several kOe and unit, respectively. The Curie temperatures of the films increased with the increase of x but decreaed with the increase of y, and was 150-$250^{\circ}C$ when x=1.0 and y=0.6-1.4. The Faraday rotation at 633 nm of the films increased as x increased but decreased as y increased, and was 1 deg/$\mu\textrm{m}$ when x=1.0 and y=1.0. Based on the data obtained, the appropriate film composition for magneto-optic recording was estimated as near x=1.0 and y=1.0 or $BiDy_2AlFe_4O_{12}$.

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Solution-Processed Al2O3 확산층을 이용한 Sputtering IZO Thin Film Transistor의 안정성 향상 (Improved Stability Sputtered IZO Thin Film Transistor Using Solution Processed Al2O3 Diffusion Layer)

  • 황남경;임유성;이정석;이세형;이문석
    • 한국전기전자재료학회논문지
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    • 제31권5호
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    • pp.273-277
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    • 2018
  • This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

반도체용 박막재료의 열응력-변형 특성에 미치는 passivation 층의 영향 분석 (Effects of passivation layer on the thermal deformation behavior of metal film used in semiconductor devices)

  • 최호성;이광렬;권동일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.732-734
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    • 1998
  • Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

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