• 한국분말재료학회지
• /
• 제12권3호
• /
• pp.214-219
• /
• 2005

In order to investigate the formation of AlN, mechanical alloying was carried out in $N_2$ and $NH_3$ atmosphere. Differential thermal analysis (DTA), x-ray diffraction (XRD) and chemical analysis were carried out to examine the formation behavior of aluminum nitrides. No diffraction pattern of AlN was observed in XRD analysis of the as-milled powders in $NH_3\;or\;N_2$ atmosphere. However, DTA and chemical analysis indicated that the precursors for AlN were formed in the Al powders milled in $NH_3$ atmosphere. The AlN precursors transformed to AlN after heat treatment at and above $600^{\circ}C$. It was considered that the reaction between Al and $NH_3$ was possible by the formation of fresh Al surface during mechanical alloying of Al powders.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
• /
• pp.153-153
• /
• 1999

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 1998년도 추계학술대회 및 발표대회 강연 및 발표논문 초록집
• /
• pp.12-13
• /
• 1998

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
• /
• pp.172.1-172
• /
• 2000

• 한국세라믹학회지
• /
• 제26권1호
• /
• pp.100-108
• /
• 1989

Aluminum hydroxides were prepared by the alkoxide hydrolysis method using Al-isopropoxide as a starting material and NH4OH as a catalytic agent. When Al-isopropoxide was hydrolyzed in a H2O-NH3 system, only Al(OH)3 was obtained over all pH values. However, AlOOH was formed besides Al(OH)3 when Al-isopropoxide was hydrolyzed in a H2O-NH3-isopropyl alcohol system. The AlOOH/Al(OH)3 ratio was increased as the isopropyl alcohol content was increased. The hydroxides, Al(OH)3 and AlOOH, obtained in this study and the commerical products, $\alpha$-Al2O3 and AlOOH were subjected to the carbothermal reduction and nitridation reaction to product AlN powder, using carbon black as a reducing agent under N2 atmosphere at various temperatures. AlN was synthesized from the obtained Al(OH)3 and the commercial AlOOH at 145$0^{\circ}C$, however, synthesized from the obtained AlOOH and the commercial alpha-alumina at 135$0^{\circ}C$. The temperature difference is assumed to be attributed to the reactivity of those powders. AlN powder prepared from the Al-isopropoxide was observed to have the narrower particle size distribution than that prepared from the commercial $\alpha$-Al2O3 or AlOOH.

• 한국재료학회지
• /
• 제25권12호
• /
• pp.694-702
• /
• 2015

Nd-Fe-B permanent magnets have been used in a wide variety of applications because of their high magnetic flux density. So, demand for neodymium has been increasing in worldwide. In this study, an electrowinning process was performed in $LiF-NdF_3-Nd_2O_3$ high temperature molten salts. However, a corrosion resistant material for use in the molten salt must be found for stable operation because of the harsh corrosion environment of the electrowinning process. Therefore, for this paper, boron nitride(BN), aluminum nitride(AlN), and silicon nitride($Si_3N_4$) were selected as protective and structural materials in the high temperature electrolyte. To investigate the characteristics of BN, AlN, and $Si_3N_4$, in molten salts, materials were immersed in the molten salts for 24, 72, 120, and 192 hours. Also, surface condition and stability were investigated by SEM and EDS and corrosion products were calculated by HSC chemistry. As a result, among BN, AlN, and $Si_3N_4$, AlN was found to show the best protective material properties.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.269-269
• /
• 2011

티타늄-알루미늄(Titanium-Aluminum) 질화물(Nitride)은 고경도 난삭재의 고능률 절삭 분야에 사용되는 공구의 수명 향상을 위한 표면처리 소재로 각광을 받고 있다. 건식고속가공을 효과적으로 수행하기 위해서는 코팅막 재료가 가공 중 발생하는 고온에서도 견디는 우수한 내산화성을 지니면서 내마모, 내충격 특성등의 기계적 성질이 우수한 코팅을 필요로 하며 이러한 분야에 TiAlN을 적용하기 위한 많은 연구가 진행되고 있다. 본 연구에서는 아크(Cathodic Arc) 코팅을 시스템을 이용하여 N2 유량변화에 따라 TiAlN 박막을 제조하고 그 특성을 평가하였다. 아크 소스에 장착된 타겟은 120 $mm{\Phi}$, Ti : Al=50 : 50 at% 의 TiAl 타겟을 사용 하였고, 시편과 타겟 간의 거리는 약 30 cm이며, 시편은 SUS를 사용하였다. 시편을 진공용기에 장착하고 ~10-6 Torr까지 진공배기를 실시하고, Ar 가스를 진공용기 내로 공급하여 ~10-4 Torr에서 시편에 bias (Pulse : 400V)를 인가한 후 아크를 발생시켜 약 5분간 청정을 실시하였다. 플라즈마 청정이 끝나면 시편에 인가된 bias를 차단하고 N2 유량을 변화시키며 코팅을 실시하였다. 질소 유량이 증가함에 따라 색상은 회색에서 어두운 보라색으로 변화하였고 SEM 사진을 통해 Micro paticle 이 감소하는 것을 확인 할 수 있었으며 이는 질소유량이 증가 할수록 표면조도 또한 감소하는 분석결과와도 일치하였다. XRD 분석을 통해 질소 유량이 160 sccm 이상에서 TiAlN이 합성되는 것을 볼 수 있었고 질소 유량이 240 sccm일 때 가장 높은 경도를 보였다. 따라서 본 연구에서 얻어진 결과를 바탕으로 더욱 다양한 조건에서 TiAlN 코팅에 응용한다면 다양한 색상 구현과 내마모성 등에서 많은 장점을 얻을 수 있을 것으로 예상된다.

• 한국분말재료학회지
• /
• 제11권4호
• /
• pp.308-313
• /
• 2004

An experimental study on the combustion of superfine aluminum powders (average particle diameter, a$_{s}$: ∼0.1 ${\mu}{\textrm}{m}$) in air is reported. The formation of aluminum nitride during the combustion of aluminum in air and the influence of the combustion scenario on the structures and compositions of the final products are in the focus of this study. The experiments were conducted in an air (pressure: 1 atm). Superfine aluminum powders were produced by the wire electrical explosion method. Such superfine aluminum powder is stable in air but once ignited it can burn in a self-sustaining way due to its low bulk: density (∼0.1 g/㎤) and a low thermal conductivity. During combustion, the temperature and radiation were measured and the actual burning process was recorded by a video camera. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and chemical analysis were performed on the both initial powders and final products. It was found that the powders, ignited by local heating, burned in a two-stage self-propagating regime. The products of the first stage consisted of unreacted aluminum (-70 mass %) and amorphous oxides with traces of AlN. After the second stage the AlN content exceeded 50 mass % and the residual Al content decreased to ∼10 mass %. A qualitative discussion is given on the kinetic limitation for AlN oxidation due to rapid condensation and encapsulation of gaseous AlN.N.

• Bulletin of the Korean Chemical Society
• /
• 제15권1호
• /
• pp.79-83
• /
• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

• Bulletin of the Korean Chemical Society
• /
• 제15권1호
• /
• pp.28-33
• /
• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.