• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.457-464
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• 1991

Aluminum nitride (AlN) has excellent properties such as high thermal conductivity and electrical resistivity, whereas it has some disadvantages such as low sinterability and tendency to be hydrolyzed by moisture at room temperature. In the present work, the relative density, modulus of rupture and microhardness were examined for pressure-less-sintered AlN (synthetic and commercial) bodies which were prepared under the conditions of various sintering temperatures, holding times and additions of CaCO3 which showed the best effect on sinterability among the various sintering aids. As a result, the AlN bodies with 1.0 wt% CaCO3 (0.56wt% CaO) which were sintered at 1800$^{\circ}C$ for 20 min showed good densification. In this case, the relative densities were 95.9% and 95.2%, and microhardnesses were 10.3 GPa and 9.8 GPa for synthetic and commercial AlN respectively. And as the holding time at 1800$^{\circ}C$ was increased from 10 min to 60 min, the relative density was increased from 91.9% to 96.5%. It was considered that impurities of metals and oxygen promoted the densification of AlN at low temperature (1600$^{\circ}C$).

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.79-87
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• 1994

Aluminum nitride was hydrolyzed in contact with water, evolving the reaction heat of 172 cal/g within 12 hours to form alumina trihydrates. At 4$0^{\circ}C$ >, amorphous alumina hydrate was easily produced by the spontaneous breaks of AlN particle at the beginning of the hydrolysis process, while bayerite was formed by the dissolution-recrystallization processes of amorphous alumina hydrate at the temperature between 4$0^{\circ}C$ and 6$0^{\circ}C$, and pseudo-boehmite was generated on the surface of AlN particle by the condensation process of the corresponding phase at 6$0^{\circ}C$ <. The longer the hydrolysis timje or the higher the value of pH in solution, the more the bayerite phase was produced. However, pseudo-boehmite was easily generated under the following favorable conditions; when the hydrolysis reaction occured rapidly at the beginning and when the absorption of OH radical on the surface of AlN particle was disturbed by ethyl alcohol in a solution. However, aluminum nitride was hardly hydrolyzed in a solution of pH 2.0.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.5
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• pp.223-228
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• 2017

Aluminum nitride (AlN) powder was successfully synthesized at low temperature via carbothermal reduction and nitridation (CRN) assisted by microwave heating. The synthesis processes of AlN powder were investigated with X-ray diffraction, FE-SEM, FT-IR and TGA/DSC. Aluminum nitrate was used as an oxidizer and aluminum source, urea as fuel, and glucose as carbon source. These starting materials were mixed with D.I water and reacted in a flask at $100^{\circ}C$ for 20 minutes. After the reaction was finished, black foamy intermediate product was formed, which was considered to be an amorphous $Al_2O_3$ particles through intermediate product obtained by solution combustion synthesis (SCS) at the results of X-ray diffraction patterns and FT-IR. This intermediate product was nitridated at temperatures of $1300^{\circ}C$ and $1400^{\circ}C$ in $N_2$ atmosphere by a microwave heating furnace and then decarbonated at $600^{\circ}C$ for 2 hours in air. It should be noticed from FE-SEM images that as nitridated particles, identified as AlN from X-ray diffraction patterns, are covered with carbon residues. After decarbonating the nitridated powders, the spherical pure AlN powders were obtained without alumina and their particle sizes were dependent on the nitridating temperature with high temperature of $1400^{\circ}C$ giving large particles of around 70~100 nm.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Resources Recycling
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• v.26 no.3
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• pp.39-46
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• 2017

AlN powder was prepared by carbon reduction and subsequent nitridation method through lab- scale experiments. AlN powder was synthesized using the mixture of high purity $Al_2O_3$ powder and carbon black at $1,600{\sim}1,700^{\circ}C$ for 0.5~6 hours under nitrogen atmosphere (flow rate of nitrogen gas: $4.7{\times}10^{-6}{\sim}20{\times}10^{-6}m^3/sec$) with variation of charged height of the mixture powder. Experimental results showed that size of the synthesized particles grows with increasing of temperature. The reaction activation energy was calculated as 382 kJ/mol at the temperature range, and it was considered that chemical reaction is the rate determining step. Content of oxygen and nitrogen of the prpared samples were 0.71~0.96 wt% and 30.7~35.1 wt%. The results was similar with those of the commercial AlN product.

• Elastomers and Composites
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• v.55 no.1
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• pp.59-66
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• 2020

Herein, we investigated the thermal conductivity and thermal stability of natural rubber composite systems containing hybrid fillers of boron nitride (BN) and aluminum nitride (AlN). In the hybrid system, the bimodal distribution of polygonal AlN and planar BN particles provided excellent filler-packing efficiency and desired energy path for phonon transfer, resulting in high thermal conductivity of 1.29 W/mK, which could not be achieved by single filler composites. Further, polyethylene glycol (PEG) was compounded with a commonly used naphthenic oil, which substantially increased thermal conductivity to 3.51 W/mK with an excellent thermal stability due to facilitated energy transfer across the filler-filler interface. The resulting PEG-incorporated hybrid composite showed a high thermal degradation temperature (T₂) of 290℃, a low coefficient of thermal expansion of 26.4 ppm/℃, and a low thermal distortion parameter of 7.53 m/K, which is well over the naphthenic oil compound. Finally, using the Fourier's law of conduction, we suggested a modeling methodology to evaluate the cooling performance in thermal management system.

• Journal of Powder Materials
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• v.26 no.5
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• pp.395-404
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• 2019

Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.65-70
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• 2015

A study on thermal properties for a single-layer metal and two-layer composites was investigated for the heat-sink application. For the single-layer metal, an aluminum alloy (Al6061) was selected. A screen printed aluminum nitride (AlN) layer on the Al6061 substrate was chosen for the two-layer composites. The thermal conductivity of the sample was determined from the thermal diffusivity measured by the light flash analysis (LFA), specific heat and density. Measured thermal property values were compared to calculated values using the data from the references. The thermal conductivity of composites with screen printed AlN layer on the Al6061 substrate decreased linearly with increasing the thickness of AlN layer. Measured values of the thermal conductivity for composites with $53{\mu}m$ and $163{\mu}m$ thick AlN layers were $114.1W/m{\cdot}K$ and $72.3W/m{\cdot}K$, respectively. In particular, the thermal conductivity of the screen-printed AlN layer was demonstrated by appling the rule of mixture in view point of thermal resistivity. Measured values of the thermal conductivity for AlN layers with the thickness of $53{\mu}m$ and $163{\mu}m$ showed $9.35W/m{\cdot}K$ and $12.40W/m{\cdot}K$, respectively.