• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• 조명전기설비학회논문지
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• 제16권1호
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• pp.35-43
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• 2002

새로운 형태의 고체 상태의 대전력, 고속전자장치인 광전도 전력스위치(PCPS)의 개발과 대전력 및 고전압 상태하에서 광전도 전력스위치의 고전계 동작특성을 규명하기 위해서 많은 연구가 행해지고 있다. 그러나 표면 섬락 현상이 확실하고 효과 있는 고속, 고압스위칭 소자의 실현을 방해하고 있다. 이러한 연면방전의 물리적 현상의 명백한 이해는 새로운 기술과 소자구성을 발전시키는데 매우 중요할 뿐 아니라, 고전계·고전압에서의 동작특성을 향상시키는데 있어서도 특별한 의미를 가진다. 뿐만 아니라 고전계, 고전력 소자들을 안전하게 동작할 수 있게 하기 위해서도 필요하다. 연면방전 및 표면 절연파괴현상은 반도체 벌크 파괴 전계보다 훨씬 낮은 전계에서 적용되어 파괴된 모든 소자들에서 발생하기 때문에 이러한 문제를 해결하는 매우 실용적인 방법이 소자의 표면을 절연물로 페시베이션하는 것이다. 페시베이션된 소자들은 고전계에서 언페시페이션된 소자에 비해 매우 좋은 동작특성을 나타내므로, 본 논문에서는 페시베이션된 소자와 언페시베이션된 소자간의 I-E특성과 파괴 메커니즘을 규명하고 더 나아가 다중 페시베이션에 대한 몇몇 특성 값을 제시한다.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.361-366
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• 2014

$MnO_2$-doped $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3(0.985LNKNTS+0.015KNbO_3)$ lead-free ceramics were fabricated by conventional solid state method to develop excellent dielectric and piezoelectric properties. The result of X-ray diffraction patterns obviously indicated that all of the specimen has pure perovskite structure without secondary phase. In addition, orthorhombic phase and coexistance region of orthorhombic-tetragonal phase (MPB) were observed with amount of $MnO_2$. The optimal values of ${\rho}$=4.70 $g/cm^3$, $d_{33}=238$ pC/N, $k_P=0.46$, $Q_m=121$, ${\varepsilon}_r=849$, and $T_C=225^{\circ}C$ were obtained at 0.01 mol% $MnO_2$ doped $0.985LNKNTS+0.015KNbO_3$ ceramics sintered at $990^{\circ}C$ for 5 h, respectively. Hence, it was indicated that the suitable amount of $MnO_2$ could improve the electrical properties of $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3$ ceramics.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• Earthquakes and Structures
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• 제14권4호
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• pp.361-377
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• 2018

In this paper, an alternative reliability-based methodology is developed and implemented on the safety evaluation of structures subjected to seismic loading. To effectively elaborate the approach, structures are represented by finite elements and seismic loading is applied in time domain. The accuracy of the proposed reliability-based methodology is verified using Monte Carlo Simulation. It is confirmed that the presented approach provides adequate accuracy in calculating structural reliability. The efficiency and robustness in problems related to performance-based seismic design are verified. A structure designed by experts satisfying all post-Northridge seismic design requirements is studied. Rigidities related to beam-to-column connections are incorporated. The structure is excited by three suites of ground motions representing three performance levels: immediate occupancy, life safety, and collapse prevention. Using this methodology, it is demonstrated that only hundreds of deterministic finite element analyses are required for extracting reliability information. Several advantages are documented with respect to Monte Carlo Simulation. To showcase an applicability extension of the proposed reliability-based methodology, structural risk is calculated using simulated ground motions generated via the broadband platform developed by the Southern California Earthquake Center. It is validated the accuracy of the broadband platform in terms of structural reliability. Based on the results documented in this paper, a very solid, sound, and precise reliability-based methodology is proved to be acceptable for safety evaluation of structures excited by seismic loading.

• 한국방재학회 논문집
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• 제8권4호
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• pp.1-8
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• 2008

기존 구조물의 RC 보는 전단내력이 부족한 경우가 빈번히 발생하며, RC 보의 전단파괴거동은 갑작스럽고 취성적이다. 자중의 증가를 줄이면서 전단성능을 향상시키는 보강방법으로 강판, 탄소 판 및 탄소섬유시트 등과 같은 보강재료를 사용하여 전단 내력이 부족한 기존 RC 보의 표면에 고성능 접착제로 부착하는 방법이 실무에서 가장 많이 적용되고 있다. 본 연구는 보강재료로 강판을 사용하며, 보강재료의 형태는 Slit의 크기와 모양으로 다양하게 변화시키고 유닛화하였다. 총16개 실험체에 대하여 전단보강근의 유무, Slit의 형상, 강판두께 등을 변수로 한 실험을 통하여 Slit형 강판으로 전단보강한 RC보에 대한 보강효과, 파괴성상 및 전단내력을 비교 분석하였다. 실험결과 파괴모드는 수직형 Slit(SV시리즈)실험체는 전단파괴를 하였고, 경사형 Slit(SD시리즈)실험체는 휨파괴 양상을 나타내었다. SV시리즈 실험체는 사인장 균열발생과 동시에 Slit 강판이 콘크리트 표면을 물고 떨어지는 부착박리 파괴거동으로 콘크리트 조기파괴를 하였다. SD시리즈 실험체들은 Solid 강판을 부착한 실험체보다 다소 큰 강성과 전단내력을 나타냈다. RC 보의 휨거동을 연성적으로 유도하기위한 전단보강방법은 경사형 Slit 강판의 적용이 효율적이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.455-458
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• 2001

Spinel $LiMn_{2-y}$$M_{y}$ $O_4$powder was prepared solid-state method by calcining the mixture of LiOH - $H_2O$, Mn $O_2$, ZnO and MgO at 80$0^{\circ}C$ for 36h. To investigate the effect of substitution with Mg, Zn cation, charge-discharge experiments and initial impedance spectroscopy performed. The structure of $LiMn_{2-y}$$M_{y}$ $O_4$crystallites was analyzed from powder X-ray diffraction data as a cubic spinel, space group Fd3m. all cathode material showed spinel phase based on cubic phase in X-ray diffraction. Ununiform which calculated by (111) face and (222) face was constant in spite of the change of y value, except PUf\ulcorner LiM $n_2$ $O_4$. The discharge capacities of the cathode for the cation subbstitUtes $LiMn_{2-y}$$M_{y}$ $O_4$/Li cell at the 1st cycle and at the 40th cycle were about 120~124 and 108~112mAh/g except LiM $n_{1.9}$Z $n_{0.1}$ $O_4$/Li cell, respectively. This cell capacity is retained by 93% after 40th cycle. AC impedance of $LiMn_{2-y}$$M_{y}$ $O_4$/Li cells revealed the similar resistance of about 65~110$\Omega$ before cycling. before cycling.g.g.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.796-801
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• 2001

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the solid-state reaction method, and especially PZT(90/10) and PZT(10/90) powders were derived by the sol-gel method. All specimens showed a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increased in sintering temperature, the values for the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 14.4$\mu$m and 9.8$\mu$m, respectively. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247. 2.06%, respectively. The coercive field and the remanent polarization of x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 8.5kV/cm, 13$\mu$C/$\textrm{cm}^2$ and 17.2kV/cm, 28 $\mu$C/$\textrm{cm}^2$, respectively. The pyroelectric coefficient of the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 5.64$\times$10$^{-8}$ C/$\textrm{cm}^2$K and 2.76$\times$10$^{-8}$ C/$\textrm{cm}^2$K, respectively.

• 한국재료학회지
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• 제26권10호
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• pp.577-582
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• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

• 한국결정성장학회지
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• 제16권4호
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.