• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.244-252
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• 1997

The pseudo-spinel type solid solution, $LiAl_{2.5}/Fe_{2.5}O_8$ was prepared by reaction of $LiCO_3, Al_2O_3, Fe_2O_3$ mixture at 1620K, which can be used for cathode material in lithium batteries. Its structure was investigated by Rietveld profile-analysis of XRD in detail. The space group of solid solution is $P4_3$32(a=8.1293$\AA$) and the final residual index of structure refinement was about 5%. Cations $Al^{3+}, Fe^{3+}$ are located at both tetra- and octahedral-coordination and $Li^+$ ions are occupied in the octahedral 4b-, 12d-site of the inverse spinel.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.628-631
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• 2002

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.418-423
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• 2001

16 mole%의 CeO$_2$가 고용된 Ce-TZP 소결체 사이에 140~240$mu extrm{m}$ 두께의 Ce-TZP-5~30 vol% $Al_2$O$_3$중간층이 삽입된 층상복합체를 분말건식가압성형법에 의해 제조하였다. 소결온도는 $Al_2$O$_3$가 5~30 vol.% 첨가될 때 90% 이상의 소결밀도를 얻을 수 있도록 1$600^{\circ}C$로 정하였다. 이러한 3층 복합체에서 바깥의 Ce-TZP 지역에서의 파괴 형태는 입내파괴를 보여주었지만 $Al_2$O$_3$가 함유된 중간층에서는 입계파괴가 전이되면서 인성증가를 보여주었다. 이러한 층상 복합체의 경우 중간 층에 들어가는 Ce-TZP 중의 $Al_2$O$_3$함량이 30 vol.% 정도에 이르면 층간의 서로 다른 소결밀도 및 수축율, 열팽창계수 때문에 층간 소결 결함이 생겨 층간에서 균열의 전파가 큰 영향을 받음을 알 수 있었다. 반면 중간층의 $Al_2$O$_3$함량이 적을 경우 층간 결함이 생기지 않아 층간에서 균열의 전파가 별 영향을 받지 않음을 알 수 있었다.

• The Journal of Natural Sciences
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• v.7
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• pp.19-25
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• 1995

In this study, the Mossbauer effect of the $NiAl_0.8Fe_1.2O_4$ was investigated in the temperature range of 77K-1000K. The spectra were composed of two component, one is sixtet and the other doublet, at low temperature. From the temperature dependence of Mossbauer spectum, it is appeared that the magnetic properties of $NiAl_0.8Fe_1.2O_4$ varies from ferrimagnetism to paramagnetism as the increasing tempereture. And the magnetic relaxation patterns of the $NiAl_0.8Fe_1.2O_4$ were shown superparamagnetic effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.313.2-313.2
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• 2013

본 연구에서는 기존에 연구된 Solar Cell 보다 구조 및 제작이 단순한 $Al/Al_2O_3/Si$(100) Solar cell을 제작하여 평가하였다. 기판으로는 p-type Si(100), 0.5~2 ${\Omega}{\cdot}cm$을 사용하여 chemical cleaning 후 ALD(Atom Layer Deposition)법으로 Al2O3 터널링 절연막을 증착하였으며, 박막의 두께를 1~10 nm로 변화시켜 MIS 커패시터의 터널링 효과를 평가하였다. MIS 커패시터의 전기적 특성평가를 위해 누설전류 밀도-전계 특성은 pA meter/DC Voltage source를 사용하였고, 커패시턴스-전압특성, D-factor 특성은 precision LCR meter를 사용하였다. $Al/Al_2O_3/Si$(100) Solar cell의 특성평가를 위해 300~1100nm 파장영역에 따른 양자 효율을 평가하기 위해 Quantum Efficiency system (QE)을 사용하였고, Stanard Test Conditions 100 $mW/cm^2$, AM1.5, $25^{\circ}C$ 조건의 Voc, Isc, Jsc, FF (Fill Factor) 및 Efficiency(%)를 평가하기 위해 Solar simulator를 이용하였다.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.233-237
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• 2015

In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.479-486
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• 2023

In this study, we investigated the effect of the Ce_xZr_1-xO₂ (CZ) addition onto Ni/Al₂O₃ catalysts on the catalytic performance in methane steam reforming. In the reaction results, the CZ-added Ni/Al₂O₃ catalyst showed higher CH₄ conversion and H₂ yield under the same reaction conditions than Ni/Al₂O₃. From the characterization data, the two catalysts had similar support porosity and Ni dispersion, confirming that the two properties could not determine the catalytic performance. However, the oxygen vacancy over the CZ-added Ni/Al₂O₃ catalyst induced an efficient steam activation at low reaction temperatures, resulting in an increase in the catalytic activity and H₂ yield.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.394-399
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• 2000

The mechanical and electrical properties of pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), TiB2, and (Al5Y3O12). Reaction between Al2O3 and $Y_2O_3$ formed YAG but the relative density decreased with increasing $Al_2O_3+Y_2O_3$ contents. The Flexural strength showed the value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives at room temperatures. Owing to crack deflection and crack bridging, the fracture toughness showed 6.2, 6.0 and 6.6 MPa.m1/2 for composites added with 4, 8 and 12 wt% Al2O3+Y2O3 additives respectively at room temperature. The resistance temperature coefficient showed the value of $3.6\times10^{-3},\; 2.9\times10^{-3}\; and\; 3.0\times10^{-3} /^{\circ}C$$^{\circ}C$ for composite added with 4, 8 and 12 wt% $Al_2O_3+Y_2O_3$additives respectively at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.516-522
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.