• 한국표면공학회지
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• 제25권5호
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• 한국표면공학회지
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• 제35권4호
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• pp.199-205
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• 2002

TiN and TiAlN films were deposited on SKD 11 steel substrates by an arc ion plating (AIP) technique. The crystallinity and morphology for the deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mechanical properties of both films were investigated through the indentation, impact, and wear test. Those films fairly adherent to SKD 11 steel substrate, showed hardness values of 2300 $\pm$ 100kg/$\textrm{mm}^2$ and 3200 $\pm$ 100kg/$\textrm{mm}^2$ with a load of 25g, respectively. During impact test, TiAlN films showed much superior impact wear resistance to TiN films. It could be suggested that the TiN films was failed relatively by plastic deformation with oxidation during impact test, while TiAlN films was failed by brittle fracture and resisted the oxidation by the impact energy. The friction coefficient of TiAlN films became lower than that of TiN films at high sliding speed condition although it was higher than that of TiN films at low speed. Therefore, TiAlN films was suggested to be more advantageous than TiN films for high speed machining fields.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.149-153
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• 2012

Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.

• 한국표면공학회지
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• 제36권2호
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 열처리공학회지
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• 제12권3호
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• pp.199-205
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• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• Corrosion Science and Technology
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• 제12권3호
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.