• Journal of the Korean Vacuum Society
• /
• v.10 no.4
• /
• pp.403-410
• /
• 2001

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.11
• /
• pp.2069-2074
• /
• 2007

The 27Al multiple quantum magic angle spinning (MQMAS) nuclear magnetic resonance (NMR) spectra of mordenite zeolites were simulated using the point charge model (PCM). The spectra simulated by the PCM considering nearest neighbor atoms only (PCM-n) or including atoms up to the 3rd layer (PCM-m) were not different from those generated by the Hartree-Fock (HF) molecular orbital calculation method. In contrast to the HF and density functional theory methods, the PCM method is simple and convenient to use and does not require sophisticated and expensive computer programs along with specialists to run them. Thus, our results indicate that the spectral simulation of the 27Al MQMAS NMR spectra obtained with the PCM-n is useful, despite its simplicity, especially for porous samples like zeolites with large unit cells and a high volume density of pores. However, it should be pointed out that this conclusion might apply only for the atomic sites with small quadrupole coupling constants.

• Journal of the Korean Society for Precision Engineering
• /
• v.29 no.11
• /
• pp.1183-1189
• /
• 2012

Organic light-emitting diodes (OLEDs) using microcavity effect have attracted great attention because they can reduce the width of emission spectra from organic materials, and enhance brightness from the same material. We demonstrate the simulation results of the radiation properties from top-emitting organic light-emitting diodes (TE-OLEDs) with microcavity structures based on the general electromagnetic theory. Organic materials such as N,N'-di (naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) ($Alq_3$) as emitting and electron transporting layer are used to form the OLEDs. The organic materials were sandwiched between anode such as Ni or Au and cathode such as Al, Ag, or Al:Ag. The devices were characterized with electroluminescence phenomenon. We confirmed that the simulation results are consistent with experimental results.

• Journal of the Korean Ceramic Society
• /
• v.22 no.4
• /
• pp.3-8
• /
• 1985

The layer charge densities and interlayer C. E. C(cation exchange capacity) of ten mica-type aluminosilicates from Yong-il Pohang-prefacture were determined by n-alkylammonium method which is based on the mo-nolayer-doubelelayer structural transition of ni-alkylammonium ion in interlayer space of the layered silcates. The upper and lower limits of layer charge and interlyer C, E, C estimated were about 0.25~0.36 eq/(Si, $Al)_4$ O10 and 69~99meq/100g, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2002.02a
• /
• pp.111-112
• /
• 2002

• Journal of the Korean Electrochemical Society
• /
• v.3 no.1
• /
• pp.1-4
• /
• 2000

The Bis(8-oxyquinolino) zinc lII (Znq2) were synthesized successfully from zinc chloride $(ZnCl_2)$ as a initial material . The organic electroluminescece devices (ELDs) were fabricated with N-N'-diphenyl-N-N'-bis (3-meth-ylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) which act as a hole transporting layer and the Znq2 act as an EL emitting layer and electron transporting layer. In order to maximize luminance of ELD, TPD/Znq2/Al were deposited onto cleaned indium tin oxide (ITO) by changing thickness of EL emitting layer. The photoluminescence (PL) results show that Znq2 compound emits yellow green from 540nm. electrochemical behavior with V-J and V-L curve of carrier injection was investigated from 6 V. respectively. The maximum luminance were defected about $838 cd/m^2$. From these results, ai synthesized Znq2 material maybe one of the useful material of organic EL display material.

• Journal of the Korean Society for Heat Treatment
• /
• v.12 no.3
• /
• pp.221-230
• /
• 1999

The surface nitrogen permeation of Al alloyed 0.14%C-13%Cr stainless steels was investigated after heat treating at $1050^{\circ}C{\sim}1150^{\circ}C$ in the nitrogen gas atmosphere. The strong affinity between Al and nitrogen permeates the nitrogen through the interior of the steels. Two precipitates of round type and needle type are observed at the surface layer. These precipitates mainly consist of AlN containing plenty of aluminum. The surface layer of 0.53%Al alloyed specimen shows ferrite phase, while the surface layers of 1.65%Al and 2.27%Al alloyed specimens appear ${\gamma}$ plus ${\alpha}$ phases. The depth of nitrogen permeation depends upon the Al content and microstructure of the matrix. The 1.65%Al alloyed specimen representing ${\alpha}+{\gamma}$ matrix phases at the nitrogen permeation temperature shows the maximum case depth in this experiment. Although the surface hardness increases by raising the Al content of the specimen owing to the increase of nitride precipitation density, the nitride precipitation deteriorates the corrosion resistance in the solution of HCl, $H_2SO_4$, and $FeCl_3$.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.2
• /
• pp.154-158
• /
• 2001

The steps for the generation of very thin GaN films on ultrathin AlN/6H-SiC surface by alternating a pulsative supply (APS) of trimethyl gallium and NH3 gases have been examined by ASED-MO calculations. We postulate that the gallium cul ster was formed with the evaporation of CH4 gases via the decomposition of trimethyl gallium (TMG), dimethyl gallium (DMG), and monomethyl galluim (MMG). During the injection of NH3 gas into the reactor, the atomic hydrogens were produced from the thermal decomposition of NH3 molecule. These hydrogen gases activated the Ga-C bond cleavage. An energetically stable GaN nucleation site was formed via nitrogen incorporation into the layer of gallium cluster. The nitrogen atoms produced from the thermal degradation of NH3 were expected to incorporate into the edge of the gallium cluster since the galliums bind weakly to each other (0.19 eV). The structure was stabilized by 2.08 eV, as an adsorbed N atom incorporated into a tetrahedral site of the Ga cluster. This suggests that the adhesion of the initial layer can be reinforced by the incorporation of nitrogen atom through the formation of large grain boundary GaN crystals at the early stage of GaN film growth.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.169-173
• /
• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1275-1276
• /
• 2008

In this study, a micro-cavity organic light-emittingdevice (OLED) with semi-transparent-Ag/AgO hole injecting layer (HIL) was fabricated and their performance was investigated. For the fabrication of OLEDs N,N-diphenyl-N,N-(3-methyphenyl)-1,1-biphenyl-4-4-diamine (TPD), known as a hole transporting material and tris (8-hydroxyquinolinato)-aluminum ($Alq_3$) as both electron-transporting layer (ETL) and emission layer (EML) were deposited using thermal evaporation technique. And Al layer as cathode was then deposited using thermal evaporation technique. Effects of the semi-transparent-Ag/AgO layers on the resulting OLED performance were investigated.